AAT9121 30V N-Channel Power MOSFET General Description Features The AAT9121 30V N-Channel Power MOSFET is a member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. • • • • Applications VDS(MAX) = 30V ID(MAX) = 8A @ 25°C Low Gate Charge Low RDS(ON): • 24 mΩ @VGS = 10V • 35 mΩ @ VGS = 4.5V SOP-8 Package DC-DC converters for mobile CPUs Battery-powered portable equipment High power density DC - DC supplies Power supplies Absolute Maximum Ratings Symbol VDS VGS Top View Description D D D 8 7 6 5 1 S 2 S 3 S 4 G Value Drain-Source Voltage Gate-Source Voltage 1 TA = 25°C TA = 70°C Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range TJ, TSTG D (TA=25°C unless otherwise noted) ID PD Preliminary Information • • • • PWMSwitch™ Units 30 ±20 ±8.0 ±6.4 ±24 2.25 2.5 1.6 -55 to 150 °C Value Units 50 28 °C/W °C/W V A W Thermal Characteristics Symbol RθJA RθJC Description Typical Junction-to-Ambient Typical Junction-to-Case 1 Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width. 9121.2001.12.0.9 1 AAT9121 30V N-Channel Power MOSFET Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Description Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source ON-Resistance ID(ON) VGS(th) IGSS On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current IDSS 2 Drain Source Leakage Current gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 2 VGS=0V, ID=250µA VGS=10V, ID=8A VGS=4.5V, ID=6.6A VGS=10V ,VDS=5V (Pulsed) VGS=VDS, ID=250µA VGS=±20V, VDS=0V VGS=0V,VDS=30V VGS=0V,VDS=30V, TJ=55°C VDS=15V, ID=8A VDS=15V, ID=8A, VGS=5V VDS=15V, ID=8A, VGS=10V VDS=15V, ID=8A, VGS=10V VDS=15V, ID=8A, VGS=10V VDD=15V, VGS=10V, RD=1.8Ω , VDD=15V, VGS=10V, RD=1.8Ω , VDD=15V, VGS=10V, RD=1.8Ω , VDD=15V, VGS=10V, RD=1.8Ω , 2 Min VGS=0, IS=2.25A TA=25ºC Typ Max 30 V 16 28 24 35 24 1.0 ±100 1 5 15 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units 10.5 20.5 3.8 2.9 9 12 38 19 mΩ A V nA µA S 16 28 15 20 55 28 nC nC nC nC ns ns ns ns 1.1 2.25 V A Note 2: Pulse test: Pulse Width = 300µs Note 3: Guaranteed by design. Not subjected to production testing. 2 9121.2001.12.0.9 AAT9121 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Normalized RDS(ON) 30 10V 6V 4.5V 25 5V ID (A) 20 4V 15 10 2V 5 3V 3.5V 0 0 1 2 3 4 5 RDS(ON) / RDS(ON) at gate = 10 V Forward Characteristics 3 4V 2.5 3.5 V 4.5 V 5V 2 1.5 1 6V 0.5 10 V 0 VD (V) 0 5 10 15 20 25 30 ID (A) RDS(ON) vs. VG Transfer 30 100 5A 25 VG=VD 15A 10A 20 60 ID (A) RDS(ON) (mΩ) 80 40 15 10 20 5 0 0 0 2 4 6 8 0 10 3 4 VG (V) Source to Drain Voltage Gate Charge Characteristics 5 Gate Voltage (V) 10 ISD (A) 10 1 0.6 0.8 1 1.2 8 6 4 2 0 0 VSD (V) 9121.2001.12.0.9 2 VG (V) 100 0.1 0.4 1 5 10 15 20 25 Gate Charge (nC) 3 AAT9121 30V N-Channel Power MOSFET Ordering Information Part Number Package Marking SOP-8 Bulk Tape and Reel AAT9121IAS-B1 AAT9121IAS-T1 Package Information SOP-8 Dim E H D 7 (4x) A c A2 Q b y e A1 L A A1 A2 B C D E e H L Y θ1 Millimeters Min Max 1.35 1.75 0.10 0.25 1.45 0.33 0.51 0.19 0.25 4.80 5.00 3.80 4.00 1.27 5.80 6.20 0.40 1.27 0.00 0.10 0° 8° Inches Min Max 0.053 0.069 0.004 0.010 0.057 0.013 0.020 0.007 0.010 0.189 0.197 0.150 0.157 0.050 0.228 0.244 0.016 0.050 0.000 0.004 0° 8° Note: 1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2. TOLERANCE 0.1000mm (4mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY: 0.1000mm 4. DIMENSION L IS MEASURED IN GAGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER; CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. Advanced Analogic Technologies, Inc. 1250 Oakmead Parkway, Suite 310, Sunnyvale, CA 94086 Phone (408) 524-9684 Fax (408) 524-9689 4 9121.2001.12.0.9