MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4015 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. Unit: mm · Small package by full molding (SIP 10 pin) · High collector power dissipation (4 devices operation) : PT = 4 W (Ta = 25°C) · High collector current: IC (DC) = 5 A (max) · High DC current gain: hFE = 1000 (min) (VCE = 4 V, IC = 3 A) · Zener diode included between collector and base. · Unclamped inductive load energy: ES/B = 100 mJ (min) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 55 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 6 V DC IC 5 Pulse ICP 8 IB 0.5 A PC 2.0 W PT 4.0 W Tj 150 °C Tstg −55 to 150 °C Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range JEDEC ― JEITA ― TOSHIBA A 2-25A1A Weight: 2.1 g (typ.) Array Configuration 3 5 4 2 7 6 9 8 1 10 R1 R2 R1 ≈ 5 kΩ R2 ≈ 150 Ω 1 2002-11-20 MP4015 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit ΣRth (j-a) 31.3 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 A ― ― 10 µA Collector cut-off current ICEO VCE = 45 V, IB = 0 A ― ― 10 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 A 0.3 ― 10 mA V (BR) CBO IC = 10 mA, IE = 0 A 50 ― 70 V hFE (1) VCE = 4 V, IC = 1 A 1000 ― ― hFE (2) VCE = 4 V, IC = 3 A 1000 ― ― VCE (sat) (1) IC = 1 A, IB = 4 mA ― 0.9 1.4 VBE (sat) (2) IC = 3 A, IB = 10 mA ― 1.3 2.0 VBE (sat) IC = 1 A, IB = 4 mA ― 1.6 2.0 Base-emitter voltage VBE VCE = 4 V, IB = 3 A ― 1.8 2.5 V Transition frequency fT 7 ― MHz ― 44 ― pF ― 0.6 ― ― 4.2 ― ― 2.3 ― 100 ― ― DC current gain Saturation voltage Collector-emitter Base-emitter Collector output capacitance Cob Turn-on time VCE = 3 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz ton Input Storage time 20 µs tstg IB2 IB1 Switching time ― V µs VCC = 30 V IB2 Fall time Output IB1 10 Ω Collector-base breakdown voltage tf IB1 = −IB2 = 10 mA, duty cycle ≤ 1% ES/B T.U.T IC VCC = 20 V Refer to Figure 1 mJ PW L (coil) = 10 mH Unclamped inductive load energy IB1 0 IB2 IB1 = 0.1 A Clamp (C-B zener) ICP IB2 = −0.1 A 0 VCE IC Note 1: Pulse width adjusted for desired ICP (ICP = 4.48 A min) Note 2: ES/B = Figure 1 1 L･ICP 2 2 Measurement Circuit of Unclamped Inductive Load Energy ES/B 2 2002-11-20 MP4015 rth – tw (°C/W) 300 Curves should be applied in thermal rth 100 Transient thermal resistance 50 (4) limited area (single nonrepetitive pulse) below figure show thermal resistance per 1 unit versus pulse width. (1) 30 10 5 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 3 1 0.5 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) PT – Ta Safe Operating Area 8 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (W) 20 PT 10 I max (pulsed)* C 1 ms* Total power dissipation 10 ms* 5 IC (A) 3 1 6 4 (4) Circuit board (3) (2) 2 (1) 0 0 0.5 40 80 120 160 200 Ambient temperature Ta (°C) 0.3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.05 3 5 10 VCEO max 30 Collector-emitter voltage VCE 50 100 (V) ∆Tj – PT 160 (°C) 0.1 Junction temperature increase ∆Tj Collector current (3) (2) (1) (2) (3) 80 Circuit board Attached on a circuit board 40 0 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 1 2 3 Total power dissipation 3 (4) 120 4 PT 5 (W) 2002-11-20 MP4015 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-11-20