Anpec APM9930CK Dual enhancement mode mosfet (n-and p-channel) Datasheet

APM9930/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
Pin Description
N-Channel
20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V
RDS(ON)=17mΩ(typ.) @ VGS=4.5V
RDS(ON)=25mΩ(typ.) @ VGS=2.5V
•
S1
1
8
D1
S1
1
8
D
G1
2
7
D1
G1
2
7
D
S2
3
6
D2
S2
3
6
D
G2
4
5
D2
G2
4
5
D
P-Channel
-20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V
RDS(ON)=72mΩ(typ.) @ VGS=-4.5V
RDS(ON)=98mΩ(typ.) @ VGS=-2.5V
•
APM9930C
APM9930
SO-8
SO-8
D1
D
D1
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
G1
G1
SO-8 Package
S1
S1
N-Channel MOSFET
Applications
•
G2
S2
N- and P-Channel
MOSFET
S2
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G2
D2
D2
P-Channel MOSFET
Ordering and Marking Information
APM9930/C
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM9930/C K :
APM9930/C
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
1
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APM9930/C
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N-Channel
P-Channel
VDSS
Drain-Source Voltage
20
-20
VGSS
Gate-Source Voltage
±12
±12
ID*
Maximum Drain Current – Continuous
15
-5
IDM
Maximum Drain Current – Pulsed
30
-10
TA=25°C
2.5
2.5
PD
Maximum Power Dissipation
TA=100°C
1.0
1.0
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
Unit
V
A
W
150
°C
-55 to 150
°C
50
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM9930/C
Test Condition
Min.
Typ. Max.
Unit
Static
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th)
Gate Threshold Voltage
IGSS
Gate Leakage Current
N-Ch
VGS=0V , IDS=250µA
20
P-Ch
-20
VDS=18V , VGS=0V
N-Ch
1
VDS=-18V , VGS=0V
P-Ch
-1
VDS=VGS , IDS=250µA
N-Ch
0.6
1.3
VDS=VGS , IDS=-250µA
P-Ch
-0.6
-1.3
VGS=±12V , VDS=0V
N-Ch
±100
VGS=±10V , VDS=0V
P-Ch
±100
VGS=10V , IDS=15A
VGS=4.5V , IDS=5A
RDS(ON)a
15
17
20
VGS=2.5V , IDS=2A
25
30
Resistance
VGS=-10V , IDS=-5A
60
70
72
80
98
105
VGS=-2.5V , IDS=-1A
a
12
Drain-Source On-state
VGS=-4.5V , IDS=-3.2A
Notes
N-Ch
V
P-Ch
µA
V
nA
mΩ
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
2
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APM9930/C
Electrical Characteristics (Cont.)
Symbol
VSDa
Parameter
Diode Forward Voltage
(TA = 25°C unless otherwise noted)
APM9930/C
Test Condition
Min.
Typ. Max.
ISD=5A , V GS=0V
N-Ch
0.6
1.3
ISD=-2A , V GS=0V
P-Ch
-0.6
-1.3
N-Channel
N-Ch
14
22
VDS=10V , IDS= 6A
P-Ch
6.8
16
VGS=4.5V
N-Ch
5
P-Channel
P-Ch
3.6
VDS=-10V , IDS=-1A
N-Ch
2.8
VGS=-4.5V
P-Ch
1.08
N-Channel
N-Ch
6
12
VDD=10V , IDS=1A ,
P-Ch
21
42
VGEN=4.5V , RG=10Ω
N-Ch
5
10
P-Ch
45
85
P-Channel
N-Ch
16
40
VDD=-10V , IDS=-1A ,
P-Ch
36
80
VGEN=-4.5V , RG =10Ω
N-Ch
5
20
P-Ch
20
40
N-Ch
1225
P-Ch
495
N-Ch
330
P-Ch
130
N-Ch
220
P-Ch
60
Unit
V
Dynamica
Qg
Q gs
Q gd
td(ON)
Tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
Ciss
Input Capacitance
VGS=0V
Coss
Output Capacitance
VDS=15V
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
nC
ns
pF
Notes
a
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
3
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APM9930/C
Typical Characteristics
N-Channel
Output Characteristics
Transfer Characteristics
20
20
VGS=3,4,5,6,7,8,9,10V
ID-Drain Current (A)
ID-Drain Current (A)
VGS=2.5V
16
12
8
V GS=2V
15
10
TJ=125°C
5
4
0
0
2
4
6
8
0
0.0
10
0.5
VDS - Drain-to-Source Voltage (V)
RDS(ON)-On-Resistance (Ω)
1.25
1.00
0.75
0.50
0.25
0
25
50
75
2.5
3.0
0.025
0.020
VGS=4.5V
0.015
V GS=10V
0.010
0.005
0.000
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
2.0
0.030
IDS=250uA
-25
1.5
On-Resistance vs. Drain Current
1.50
0.00
-50
1.0
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
VGS(th)-Threshold Voltage (V)
(Normalized)
TJ=-55°C
TJ=25°C
0
4
8
12
16
20
ID - Drain Current (A)
4
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APM9930/C
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
2.0
ID=15A
0.14
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.16
On-Resistance vs. Junction Temperature
0.12
0.10
0.08
0.06
0.04
0.02
0.00
VGS=10V
ID=15A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
1
2
3
4
5
6
7
8
9
0.4
-50
10
VGS - Gate-to-Source Voltage (V)
-25
0
75
100 125
150
Capacitance
1800
V DS=10V
ID=6A
Frequency=1MHz
1500
8
Capacitance (pF)
VGS-Gate-Source Voltage (V)
50
TJ - Junction Temperature (°C)
Gate Charge
10
25
6
4
Ciss
1200
900
600
Coss
2
300
Crss
0
0
5
10
15
20
25
0
30
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
5
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APM9930/C
Typical Characteristics (Cont.)
N-Channel
Single Pulse Power
20
80
10
70
60
TJ=150°C
Power (W)
IS-Source Current (A)
Source-Drain Diode Forward Voltage
TJ=25°C
1
50
40
30
20
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
0.01
1.2
0.1
VSD -Source-to-Drain Voltage (V)
1
10
30
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
6
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APM9930/C
Typical Characteristics
P-Channel
Output Characteristics
Transfer Characteristics
10
10
-VGS=4,5,6,7,8,9,10V
6
-ID-Drain Current (A)
-ID-Drain Current (A)
8
-V GS=3V
4
TJ=25°C
TJ=125°C
TJ=-55°C
6
4
2
2
0
8
0
2
4
6
8
0
10
0
1
-VDS - Drain-to-Source Voltage (V)
4
5
On-Resistance vs. Drain Current
1.50
0.10
RDS(ON)-On-Resistance (Ω)
-IDS=250uA
-VGS(th)-Threshold Voltage (V)
(Normalized)
3
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.25
1.00
0.75
0.50
0.25
0.00
-50
2
0.09
0.08
-VGS=4.5V
0.07
-VGS=10V
0.06
0.05
0.04
-25
0
25
50
75
0.03
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
0
1
2
3
4
5
6
-ID - Drain Current (A)
7
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APM9930/C
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.8
0.50
-ID=5A
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2
3
4
5
6
7
8
9
1.6
-VGS=10V
-ID=5A
1.4
1.2
1.0
0.8
0.6
0.4
-50
10
-VGS - Gate-to-Source Voltage (V)
-25
0
50
75
100 125 150
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
700
-V DS=10V
-ID=1A
Frequency=1MHz
600
8
Capacitance (pF)
-VGS-Gate-Source Voltage (V)
25
6
4
Ciss
500
400
300
200
2
Coss
100
Crss
0
0
2
4
6
8
10
12
0
14
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
0
5
10
15
20
-VDS - Drain-to-Source Voltage (V)
8
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APM9930/C
Typical Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward Voltage
Single Pulse Power
80
60
Power (W)
-IS-Source Current (A)
10
1
TJ=150°C
TJ=25°C
0.1
40
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
-VSD -Source-to-Drain Voltage (V)
1
10
30
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
9
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APM9930/C
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
1. 27B S C
0. 50B S C
8°
8°
10
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APM9930/C
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
11
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM9930/C
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
12
2.1± 0.1 0.3±0.013
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APM9930/C
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
13
www.anpec.com.tw
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