MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 0.54Ω ¡ID ......................................................................................... 18A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q GATE w DRAIN e SOURCE r DRAIN q e TO-3P APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Conditions VGS = 0V VDS = 0V Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value Ratings 600 ±30 18 Unit V V A 54 18 54 275 –55 ~ +150 A A A W °C –55 ~ +150 4.8 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V — 2 — — — 3 0.42 3.78 1 4 0.54 4.86 mA V Ω V 8.0 — — — 13 2800 350 50 — — — — S pF pF pF — — — — 50 85 350 100 — — — — ns ns ns ns — 1.5 2.0 V — — — — 0.45 150 °C/W ns VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case Thermal resistance Reverse recovery time trr Limits Test conditions IS = 18A, dis/dt = –100A/µs PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 250 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 300 200 150 100 50 0 0 50 100 150 CASE TEMPERATURE TC (°C) 200 102 7 5 3 2 tw=100µs 101 7 5 3 2 100 7 5 3 2 1ms 10ms 100ms DC TC = 25°C Single Pulse 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 50 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V 5V TC = 25°C Pulse Test 20 40 VGS = 20V 10V 6V 30 20 5V 10 PD = 275W DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) TC = 25°C Pulse Test 16 PD = 275W 12 8 4V 4 4V 0 0 10 20 30 40 0 50 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 32 ID = 35A 24 16 18A 8 9A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 12 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 0.8 VGS = 10V 0.6 20V 0.4 0.2 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 32 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25°C VDS = 50V Pulse Test 24 16 8 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 4 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = 10V Pulse Test 3 2 TC = 25°C 101 7 5 75°C 125°C 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) Coss 102 7 5 Tch = 25°C Crss f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 SWITCHING TIME (ns) 103 7 5 3 2 102 tf 7 5 td(on) 3 2 tr Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) Tch = 25°C ID = 18A 16 VDS = 100V 200V 12 400V 8 4 0 101 7 5 40 80 120 160 VGS = 0V Pulse Test 40 75°C TC = 125°C 30 25°C 20 10 0 200 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10–1 td(off) 101 100 20 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) Ciss 3 2 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 REVERSE RECOVERY TIME trr (ns) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) IS = 18A VGS = 0V VDD = 250V Irr 101 7 5 3 2 100 101 Tch = 25°C Tch = 150°C 2 3 5 7 102 2 3 101 7 5 3 2 100 7 5 3 2 10–1 5 7 103 SOURCE CURRENT dis/dt (–A/µs) 3 2 3 2 trr 101 7 5 102 7 5 Irr 3 2 101 0 10 2 3 5 7 101 3 Tch = 25°C 2 Tch = 150°C 100 2 3 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 102 103 7 7 5 5 3 3 trr 2 2 102 7 5 3 2 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT Irr (A) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 10–1 7 0.1 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999