BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: = ± 15° 12785 • Base terminal connected • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation. APPLICATIONS • Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT Ica (mA) (deg) 0.1 (nm) 10 ± 15 450 to 1080 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPV11 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPV11 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V mA Collector current Collector peak current Power dissipation IC 50 tp/T = 0.5, tp 10 ms ICM 100 mA Tamb 47 °C PV 150 mW Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 03-May-13 Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t 5 s, 2 mm from body Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Document Number: 81504 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV11 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 200 160 120 RthJA 80 40 0 0 20 40 60 80 Tamb - Ambient Temperature (°C) 94 8300 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter breakdown voltage Collector emitter dark current TYP. MAX. UNIT V VCE = 10 V, E = 0 ICEO 1 DC current gain VCE = 5 V, IC = 5 mA, E = 0 hFE 450 Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 15 Collector base capacitance VBE = 0 V, f = 1 MHz, E = 0 CCBO 19 pF Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Ica 10 mA deg Collector light current 3 50 nA pF Angle of half sensitivity ± 15 Wavelength of peak sensitivity p 850 nm 0.1 450 to 1080 nm Ee = 1 mW/cm2, = 950 nm, IC = 1 mA VCEsat 130 Turn-on time VS = 5 V, IC = 5 mA, RL = 100 ton 6 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 toff 5 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 fc 110 kHz Range of spectral bandwidth Collector emitter saturation voltage 300 mV μs BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 10 V 102 101 10 20 94 8249 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Rev. 1.8, 03-May-13 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81504 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV11 www.vishay.com CCBO - Collector Base Capacitance (pF) Vishay Semiconductors 10 1 VCE = 5 V λ = 950 nm 0.1 0.01 0.01 0.1 Ee - Irradiance (mW/cm²) 94 8244 Ica - Collector Light Current (mA) 100 λ = 950 nm Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 1 0.05 mW/cm2 0.02 mW/cm2 0.1 0.1 1 100 10 VCE - Collector Emitter Voltage (V) 94 8272 0 1 100 10 VCB - Collector Base Voltage (V) Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage 20 f = 1 MHz 16 12 8 4 0 0.1 1 100 10 VCE - Collector Ermitter Voltage (V) Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage ton/toff - Turn-on/Turn-off Time (µs) VCE = 5 V B - Amplification 4 12 600 400 200 0.1 1 10 IC - Collector Current (mA) Fig. 6 - Amplification vs. Collector Current Rev. 1.8, 03-May-13 8 0.1 800 94 8250 12 94 8247 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 0 0.01 f = 1 MHz 16 94 8246 Fig. 4 - Collector Light Current vs. Irradiance 10 20 10 1 CCEO - Collector Ermitter Capacitance (pF) Ica - Collector Light Current (mA) 100 VCE = 5 V RL = 100 Ω λ = 950 nm 10 8 6 ton 4 0 100 94 8253 toff 2 0 4 8 12 16 IC - Collector Current (mA) Fig. 9 - Turn-on/Turn-off Time vs. Collector Current Document Number: 81504 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV11 www.vishay.com Vishay Semiconductors 10° 20° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 1.0 Srel - Relative Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 80° 0 400 600 800 1000 0.6 λ - Wavelength (nm) 94 8348 0.4 0.2 0 94 8248 Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C E B 0.8 + 0.2 - 0.1 Chip position ± 0.15 ± 0.3 ± 0.15 8.6 7.6 ± 0.3 R 2. 45 (s 0.8 Area not plane + 0.2 - 0.1 0.5 + 0.2 - 0.1 0.5 + 0.15 1.5 ± 0.25 0.8 + 0.2 - 0.1 < 0.7 35 ± 0.5 12.3 e) er ph (4.55) 5 2.54 nom. 1.27 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5188.01-4 Issue:1; 01.07.96 96 12200 Rev. 1.8, 03-May-13 Document Number: 81504 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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