NTS1045MFS, NRVTS1045MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices 5,6 1,2,3 MARKING DIAGRAM A 1 Typical Applications • Switching Power Supplies including Wireless, Smartphone and • • • • SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 45 VOLTS Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation A SO−8 FLAT LEAD CASE 488AA STYLE 2 TH1045 A Y W ZZ A C TH1045 AYWWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Device Package Shipping† NTS1045MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTS1045MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVTS1045MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVTS1045MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 0 1 Publication Order Number: NTS1045MFS/D NTS1045MFS, NRVTS1045MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 Average Rectified Forward Current (Rated VR, TC = 166°C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 210 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ −55 to +150 °C EAS 100 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 2.0 °C/W 0.42 0.48 − 0.57 0.34 0.41 − 0.51 20 7.0 120 45 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 5.0 Amps, TJ = 25°C) (iF = 10 Amps, TJ = 25°C) vF (iF = 5.0 Amps, TJ = 125°C) (iF = 10 Amps, TJ = 125°C) Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd V mA mA pF 300 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NTS1045MFS, NRVTS1045MFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C 10 TA = 125°C TA = 25°C 1 TA = −55°C 0.1 TA = 125°C TA = 25°C 1 TA = −55°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.1 0.2 0.4 0.3 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0 0.9 1.E+00 1.E+00 1.E−01 TA = 150°C 1.E−02 TA = 125°C 1.E−03 1.E−01 TA = 150°C 1.E−02 TA = 125°C 1.E−03 1.E−04 1.E−05 1.E−06 5 10 15 20 25 35 30 40 45 0 5 15 10 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) 0 10,000 TJ = 25°C 1000 100 1 TA = 25°C 1.E−04 TA = 25°C 1.E−05 C, JUNCTION CAPACITANCE (pF) TA = 150°C 10 10 50 20 DC 15 Square Wave 10 5 RqJC = 2.1°C/W 0 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating http://onsemi.com 3 170 45 NTS1045MFS, NRVTS1045MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 22 IPK/IAV = 20 20 IPK/IAV = 5 IPK/IAV = 10 18 16 14 12 10 Square Wave 8 6 dc 4 2 0 0 4 2 6 8 12 10 14 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% (DUTY CYCLE) R(t) (C/W) 10 1 20% 10% 5.0% 2.0% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 1.0 0.1 10 100 1000 PULSE TIME (s) Figure 8. Typical Thermal Characteristics R(t) (C/W) 10 1 50% (DUTY CYCLE) 20% 0.1 10% 5.0% 2.0% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 1.0% 0.01 SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case http://onsemi.com 4 100 1000 NTS1045MFS, NRVTS1045MFS PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A 3X 4X 1.270 0.750 4X b 0.10 C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE 1.000 e/2 L 0.965 1 4 1.330 K 2X 0.905 2X 0.495 E2 PIN 5 (EXPOSED PAD) G L1 M 4.530 3.200 0.475 2X D2 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTS1045MFS/D