Zetex FMMT459TC 450v silicon npn high voltage switching transistor Datasheet

FMMT459
450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR
SUMMARY
VCEO=450V; VCE(sat) = 100mV; IC= 150mA
DESCRIPTION
This new high voltage tranistor provides users with very effiecient
performance combining low VCE (sat) and Hfe to give extremely low on state
losses at 450V operation, making it ideal for use in high efficiency Telecom
and protected line switching applications.
SOT23
FEATURES
•
Low Saturation Voltage - 90mV @ 50mA
•
Hfe Min 50 @ 30 mA
•
IC=150mA Continuous
•
SOT23 package with Ptot 625mW
•
Specification can be supplied in larger package outlines
APPLICATIONS
•
Electronic test equipment
•
Off line switching circuits
•
Piezo Actuators.
•
RCD circuits.
E
C
B
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
FMMT459TA
7
8mm embossed
3000 units
FMMT459TC
13
8mm embossed
10000 units
DEVICE MARKING
459
ISSUE 2 - DECEMBER 2001
1
Top View
FMMT459
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V CBO
500
V
Collector-Emitter Voltage
V CEO
450
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
500
mA
Continuous Collector Current
IC
150
mA
Base Current
IB
200
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
200
°C/W
Junction to Ambient (b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 2 - DECEMBER 2001
2
FMMT459
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base
Breakdown Voltage
V (BR)CBO
500
700
MAX.
UNIT
V
CONDITIONS
I C = 100µA
Collector-Emitter
Breakdown Voltage
V CEO(sus)
450
500
V
I C = 10mA*
Emitter-Base
Breakdown Voltage
V (BR)EBO
5
8
V
I E = 100µA
Collector Cut-Off
Current
I CBO
100
nA
V CB = 450V
Emitter Cut-Off Current
I EBO
100
nA
V EB = 5V
Collector Emitter
Cut-Off Current
I CES
100
nA
V CE = 450V
60
75
mV
I C = 20mA, I B = 2mA*
70
90
mV
Collector Emitter
Saturation Voltage
V CE(sat)
Base-Emitter Saturation
Voltage
V BE(sat)
.76
.9
V
I C = 50mA, I B = 6mA*
I C = 50mA, I B = 5mA*
Base-Emitter Turn-On
Voltage
V BE(on)
.71
.9
V
I C = 50mA, V CE = 10V*
Static Forward Current
Transfer Ratio
H FE
Transition Frequency
50
120
I C = 30mA, V CE = 10V*
I C = 50mA, V CE = 10V*
70
fT
Output Capacitance
C OBO
Turn-On Time
t (on)
50
MHz
5
113
PF
ns
I C = 10mA, V CE = 20V
F = 20MH Z
V CB = 20V, f = 1MH Z
I C = 50mA, V C = 100V
I B1 = 5mA, I B2 = 10mA
Turn-Off Time
t (off)
3450
ns
I C = 50mA, V C = 100V
I B1 = 5mA, I B2 = 10mA
*Measured under plused conditions. Pulse width = 300µs. Dury cycle <2%
NB. For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
ISSUE 2 - DECEMBER 2001
3
FMMT459
ELECTRICAL CHARACTERISTICS
0.40
1
Tamb=25°C
0.35
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=50
100m
IC/IB=10
IC/IB=20
10m
1m
0.20
0.10
10m
100m
1m
IC Collector Current (A)
100°C
90
-55°C
60
0.2
30
10m
100m
100m
IC/IB=20
180
120
0.6
10m
IC Collector Current (A)
1.0
210
150
25°C
0.0
1m
-55°C
VCE(SAT) v IC
Typical Gain (hFE)
VBE(SAT) (V)
Normalised Gain
VCE=10V
0.4
25°C
0.15
0.05
1.0
0.8
100°C
0.25
VCE(SAT) v IC
1.2
IC/IB=20
0.30
0
0.8
-55°C
0.6
100°C
0.4
1m
IC Collector Current (A)
25°C
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
hFE v IC
1.0
VCE=10V
VBE(ON) (V)
0.8
-55°C
0.6
0.4
1m
25°C
100°C
10m
100m
IC Collector Current (A)
VBE(ON) v IC
ISSUE 2 - DECEMBER 2001
4
FMMT459
THERMAL CHARACTERISTICS
Max Power Dissipation (W)
IC Collector Current (A)
1
100m
DC
1s
100ms
10m
10ms
1ms
100µs
Single Pulse Tamb=25°C
1m
100m
1
10
100
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
150
D=0.5
100
Single Pulse
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
Derating Curve
200
D=0.2
0.6
Temperature (°C)
Safe Operating Area
50
0.7
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 2 - DECEMBER 2001
5
FMMT459
PAD LAYOUT DETAILS
N
PACKAGE DIMENSIONS
DIM Millimetres
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
–
1.10
–
0.043
D
0.37
0.53
0.0145
F
0.085
0.15
0.0033
G
NOM 1.9
K
0.01
0.10
0.0004
L
2.10
2.50
0.0825
N
NOM 0.95
0.021
0.0059
NOM 0.075
0.004
0.0985
NOM 0.037
© Zetex plc 2001
Zetex plc
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
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For the latest product information, log on to
www.zetex.com
ISSUE 2 - DECEMBER 2001
6
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