FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE(sat) = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state losses at 450V operation, making it ideal for use in high efficiency Telecom and protected line switching applications. SOT23 FEATURES • Low Saturation Voltage - 90mV @ 50mA • Hfe Min 50 @ 30 mA • IC=150mA Continuous • SOT23 package with Ptot 625mW • Specification can be supplied in larger package outlines APPLICATIONS • Electronic test equipment • Off line switching circuits • Piezo Actuators. • RCD circuits. E C B ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL FMMT459TA 7 8mm embossed 3000 units FMMT459TC 13 8mm embossed 10000 units DEVICE MARKING 459 ISSUE 2 - DECEMBER 2001 1 Top View FMMT459 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 500 V Collector-Emitter Voltage V CEO 450 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 500 mA Continuous Collector Current IC 150 mA Base Current IB 200 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 2 - DECEMBER 2001 2 FMMT459 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 500 700 MAX. UNIT V CONDITIONS I C = 100µA Collector-Emitter Breakdown Voltage V CEO(sus) 450 500 V I C = 10mA* Emitter-Base Breakdown Voltage V (BR)EBO 5 8 V I E = 100µA Collector Cut-Off Current I CBO 100 nA V CB = 450V Emitter Cut-Off Current I EBO 100 nA V EB = 5V Collector Emitter Cut-Off Current I CES 100 nA V CE = 450V 60 75 mV I C = 20mA, I B = 2mA* 70 90 mV Collector Emitter Saturation Voltage V CE(sat) Base-Emitter Saturation Voltage V BE(sat) .76 .9 V I C = 50mA, I B = 6mA* I C = 50mA, I B = 5mA* Base-Emitter Turn-On Voltage V BE(on) .71 .9 V I C = 50mA, V CE = 10V* Static Forward Current Transfer Ratio H FE Transition Frequency 50 120 I C = 30mA, V CE = 10V* I C = 50mA, V CE = 10V* 70 fT Output Capacitance C OBO Turn-On Time t (on) 50 MHz 5 113 PF ns I C = 10mA, V CE = 20V F = 20MH Z V CB = 20V, f = 1MH Z I C = 50mA, V C = 100V I B1 = 5mA, I B2 = 10mA Turn-Off Time t (off) 3450 ns I C = 50mA, V C = 100V I B1 = 5mA, I B2 = 10mA *Measured under plused conditions. Pulse width = 300µs. Dury cycle <2% NB. For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between Terminals. ISSUE 2 - DECEMBER 2001 3 FMMT459 ELECTRICAL CHARACTERISTICS 0.40 1 Tamb=25°C 0.35 VCE(SAT) (V) VCE(SAT) (V) IC/IB=50 100m IC/IB=10 IC/IB=20 10m 1m 0.20 0.10 10m 100m 1m IC Collector Current (A) 100°C 90 -55°C 60 0.2 30 10m 100m 100m IC/IB=20 180 120 0.6 10m IC Collector Current (A) 1.0 210 150 25°C 0.0 1m -55°C VCE(SAT) v IC Typical Gain (hFE) VBE(SAT) (V) Normalised Gain VCE=10V 0.4 25°C 0.15 0.05 1.0 0.8 100°C 0.25 VCE(SAT) v IC 1.2 IC/IB=20 0.30 0 0.8 -55°C 0.6 100°C 0.4 1m IC Collector Current (A) 25°C 10m 100m IC Collector Current (A) VBE(SAT) v IC hFE v IC 1.0 VCE=10V VBE(ON) (V) 0.8 -55°C 0.6 0.4 1m 25°C 100°C 10m 100m IC Collector Current (A) VBE(ON) v IC ISSUE 2 - DECEMBER 2001 4 FMMT459 THERMAL CHARACTERISTICS Max Power Dissipation (W) IC Collector Current (A) 1 100m DC 1s 100ms 10m 10ms 1ms 100µs Single Pulse Tamb=25°C 1m 100m 1 10 100 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) 150 D=0.5 100 Single Pulse D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Derating Curve 200 D=0.2 0.6 Temperature (°C) Safe Operating Area 50 0.7 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 2 - DECEMBER 2001 5 FMMT459 PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 F 0.085 0.15 0.0033 G NOM 1.9 K 0.01 0.10 0.0004 L 2.10 2.50 0.0825 N NOM 0.95 0.021 0.0059 NOM 0.075 0.004 0.0985 NOM 0.037 © Zetex plc 2001 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2001 6