AP2761P-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
650V
RDS(ON)
1Ω
ID
10A
S
Description
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
G
D
TO-220
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
10
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
4.4
A
18
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
104
W
Linear Derating Factor
0.8
W/℃
IAR
Avalanche Current
10
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.2
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200705051-1/4
AP2761P-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
-
-
1
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3.5A
-
4.5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=10A
-
53
85
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=520V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
3
td(on)
Turn-on Delay Time
VDD=320V
-
16
-
ns
tr
Rise Time
ID=10A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
82
-
ns
tf
Fall Time
RD=32Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
2770 4430
pF
Coss
Output Capacitance
VDS=15V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Min.
Typ.
IS=10A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
610
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8.64
-
µC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP2761P-A
9
12
10V
6.0V
5.5V
o
10V
6.0V
5.5V
5.0V
T C =150 C
9
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
5.0V
6
6
3
V G =4.0V
3
V G =4.0V
0
0
0
5
10
15
20
0
25
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I D =3.5A
V G =10V
1.8
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
1.2
0.6
0.9
0
0.8
-50
0
50
100
-50
150
T j , Junction Temperature ( o C)
100
5
10
4
T j = 25 o C
o
T j = 150 C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
VGS(th) (V)
IS (A)
Fig 3. On-Resistance v.s. Gate Voltage
1
0
T j , Junction Temperature ( o C)
0.1
3
2
0.01
1
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2761P-A
f=1.0MHz
10000
I D =10A
C iss
12
V DS =330V
V DS =410V
V DS =520V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
100
4
C rss
0
1
0
20
40
60
80
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
ID (A)
10us
100us
1
1ms
10ms
o
T C =25 C
Single Pulse
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
100ms
0.01
0
1
10
100
1000
10000
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4