SRAM SRAM SRAM AS5C512K8 AS5C512K8 Austin Semiconductor, Inc. AS5C512K8 Austin Semiconductor, Inc. 512K ASSIGNMENT 512K xx 88 SRAM SRAM PINPIN ASSIGNMENT PIN ASSIGNMENT 512K x 8 SRAM (Top View) HIGH SPEED SRAM with HIGH SPEED SRAM with HIGH SPEED SRAM with REVOLUTIONARY REVOLUTIONARYPINOUT PINOUT REVOLUTIONARY AVAILABLE AS MILITARYPINOUT (Top View) (Top View) 36-Pin SOJ (DJ, ECJ & SOJ) 36-Pin SOJ (DJ, ECJ & SOJ) 36-Pin CLCC (EC) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS AVAILABLE AS MILITARY SPECIFICATIONS •SMD 5962-95600 SPECIFICATIONS •SMD 5962-95600 •SMD 5962-95613 •SMD 5962-95600 •SMD 5962-95613 •MIL-STD-883 •SMD 5962-95613 •MIL-STD-883 •MIL-STD-883 FEATURES •FEATURES Ultra High Speed Asynchronous Operation FEATURES •• Fully No Clocks UltraStatic, High Speed Asynchronous Operation • Ultra High Speed Asynchronous Operation •• Multiple center and ground pins for improved Fully Static, Nopower Clocks • Fully Static, No Clocks noise immunity • Multiple center power and ground pins for improved • Multiple center power and ground pins for improved • Easy memory expansion with CE\ and OE\ noise immunity noise immunity • options Easy memory expansion • Easy memory expansionwith withCE\ CE\and andOE\ OE\ • All inputs and outputs are TTL-compatible options options •• Single +5V and Power Supply +/-TTL-compatible 10% inputs outputs •AllAll inputs and outputsare are TTL-compatible •• Data Retention Functionality Testing Single +5V Power Supply +/• Single +5V Power Supply +/-10% 10% •• Cost Efficient Plastic Packaging Retention Functionality •Data Data Retention FunctionalityTesting Testing •• Extended Testing OverPackaging -55ºC to +125ºC for plastics Efficient Plastic •Cost Cost Efficient Plastic Packaging •• Plastic 36 pin PSOJ is fully compatible withfor the Testing Over -55ºC •Extended Extended Testing Over -55ºCtoto+125ºC +125ºC forplastics plastics Ceramic 36 pin SOJ and offered in lead free finish • •Plastic 3636 pinpin PSOJ is isfully Plastic PSOJ fullycompatible compatiblewith withthe the • TSOPII in Copper Lead Frame for Superior Thermal Ceramic 3636 pinpin SOJ and offered Ceramic SOJ and offeredininlead leadfree freefinish finish Performance2 • •3.3V Future Offering 3.3V Future Offering • RoHS Compliant Options Available OPTIONS OPTIONS OPTIONS Timing • •Timing 36-Pin Flat Pack Pack (F) (F) 36-Pin Flat MARKING MARKING MARKING • Timing 12ns access -12 12ns access -12 12ns access -12 IS61C5128AL/AS IS64C5128AL/AS 15ns access -15 15ns access -15 15ns access -15 17ns access -17 17ns access -17 17ns access -17 20ns access -20 20ns access -20 20ns access -20 25ns access -25 25ns access -25 HIGH SPEED (IS61/64C5128AL) PIN CONFIGURATION 25ns access -25 35ns access -35 35ns access -35 35ns access -35 45ns access -45 36-Pin SOJ (400-mil) 44-Pin TSOP (Type II) 45ns access -45 45ns access -45 44-Pin TSOPII (DGC & DGCR) •Operating Operating Temperature Ranges Temperature Ranges •• Operating Temperature Ranges o o Full Military (-55 o o C to +125 o o C)A0 36 NC 1/883C Full Military (-55 CCtoto+125 C)C) /883C +125 /883C Full Military (-55 o o GENERAL 44 NC NC 1 DESCRIPTION Military (-55 35 A18 A1 2XT o o C to +125 o o C) GENERAL DESCRIPTION Military (-55 C to +125 C) XT +125 C) XT Military (-55 C to 43 NC NC 2 o o 34 A17 A2 3IT Industrial (-40 The AS5C512K8 is a high speed SRAM. It offers o o C to +85 o o C) 42 NCflexibility in A0 3 Industrial IT IT Industrial(-40 (-40CCtoto+85 +85C)C) The AS5C512K8 is a high speed SRAM. It offers flexibility in 33 A16 A3 4 A18 and output 4 high-speed A1 memory applications, with chip enable41(CE\) high-speed A2 memory applications, with chip enable 40 (CE\) A17 and output 5 32 A15 A4 5 • Package(s) • Package(s) enable (OE\) These features can place the 39 A16 outputs in A3 capabilities. 6 • Ceramic Package(s) enable (OE\) capabilities. These features can place the outputs in 31 OE CEEC6 LCC 38 A15 A4 7 Ceramic LCC EC High-Z for CE additional flexibility in system design. 37 OE 8 30 I/O7 I/O0F EC 7 CeramicFlatpack LCC High-Z for additional flexibility in system design. Ceramic Ceramic Flatpack F Writing devices is accomplished when write enable (WE\) 36 I/O7 I/O0to these 9 29 I/O6 I/O1 F8 1 Ceramic Flatpack Writing devices is accomplished when35write enable (WE\) I/O6 I/O1to these 10 Plastic SOJ (Lead Free) DJ DJ Plastic SOJ (Lead Free)* and CE\ inputs are both LOW. Reading is accomplished when WE\ 28 GND VDD 9 34 GND VCC 11 Plastic SOJ (Lead Free)* DJ and CE\ inputs are both LOW. Reading is accomplished when WE\ Ceramic SOJ (attached formed lead) ECJ Ceramic SOJ (attached formed lead) ECJ 33 12 VCC GND remains HIGH and CE\ and OE\ go LOW. 27 VDD 10 GND Ceramic SOJ (attached formed lead) ECJ 32 13 CE\ and OE\ go LOW. I/O5 I/O2 and remains HIGH Ceramic SOJ SOJ Ceramic SOJ SOJ 26 11 I/O2 I/O5 As a option, the device can be supplied offering31 a reduced power 14 I/O4 I/O3 2 Ceramic SOJ also SOJ As amode, option, the device can designers be supplied reducedpower power Plastic (44pin, 400mil) DGC 25 12 I/O3factory I/O4 30 astandby 15 A14 WE allowing * PbTSOPII finish available, contact standby system to offering meet low 2 29 16 A13 A5 allowing * Pb finish also(RoHS available, contactWE factory standby mode, system designers to meet low standby power Plastic TSOPII Compliant) DGCR 24 13 A14 requirements. power supply 28 17 device operates from a single +5V A12 A6 This 23 A13 requirements. This device are operates from a single 27+5VA11 power supply 18 outputs A7 and • 2V data retention/low power A5 14 L and all inputs fully TTL-compatible. 3 26 19 A10 A8 22 A6L L15 A12 2Vdata dataretention/low retention/lowpower power •• 2V and all inputs and outputsoffers are fully TTL-compatible. The AS5C512K8DJ the convenience and of the 25 reliability 20 NC A9 21 16 A7 A11 Notes: 24 reliability 21 NC NC The AS5C512K8DJ offers the convenience and of the AS5C512K8 SRAM and has the cost advantage of a durable plastic. Foravailable, more products and 17information 20 A8 A10 23 22 NC NC 1. Pb finishFor also more contact factory AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint compatible with 36 pin CSOJ products and 18 A9 information please visit our web site at 19 NC 2. Contact factory for Copper Lead Frame Products The AS5C512K8DJ is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600. please visit our web site at 3. Not available for parts in DGC & DGCR packages. www.austinsemiconductor.com package of the SMD 5692-95600. www.austinsemiconductor.com AS5C512K8 AS5C512K8 Rev. 7.5 01/13 Rev. 7.0 05/08 AS5C512K8 Rev. 7.0 05/08 PIN DESCRIPTIONS A0-A18 Address Inputs CE Chip Enable Input 1 1 1 Micross Components reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. SRAM AS5C512K8 GENERAL DESCRIPTION standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible. The AS5C512K8DJ offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600. TSOPII with copper lead frame offers superior thermal performance. The AS5C512K8 is a high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. As a option, the device can be supplied offering a reduced power SRAM AS5C512K8 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM GND DQ8 I/O CONTROLS 4,194,304-BIT MEMORY ARRAY ROW DECODER A0-A18 INPUT BUFFER VCC 1024 ROWS X 4096 COLUMNS DQ1 CE\ OE\ COLUMN DECODER WE\ *POWER DOWN *On the low voltage Data Retention option. PIN FUNCTIONS TRUTH TABLE MODE OE\ CE\ WE\ STANDBY X H X READ L L H NOT SELECTED H L H WRITE X L L I/O HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE X = Don’t Care AS5C512K8 Rev. 7.5 01/13 A0 - A18 Address Inputs WE\ Write Enable CE\ Chip Enable OE\ Output Enable I/O0 - I/O7 Data Inputs/Outputs VCC Power VSS Ground NC No Connection Micross Components reserves the right to change products or specifications without notice. 2 SRAM AS5C512K8 *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This Voltage on Vcc Supply Relative to Vss Vcc ....................................................................-.5V to +7.0V is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the Storage Temperature (Plastic)......................-65°C to +150°C operation section of this specification is not implied. Exposure Storage Temperature (Ceramic)...................-55°C to +125°C Short Circuit Output Current (per I/O)…........................20mA to absolute maximum rating conditions for extended periods Voltage on any Pin Relative to Vss.................-.5V to Vcc+1V may affect reliability. Maximum Junction Temperature**..............................+150°C ** Junction temperature depends upon package type, cycle time, Power Dissipation ................................................................1W loading, ambient temperature and airflow, and humidity. ABSOLUTE MAXIMUM RATINGS* ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%) CONDITIONS DESCRIPTION WE\=CE\<VIL; Vcc = MAX f = MAX = 1/tRC Outputs Open Power Supply Current: Operating "L" Version Only CE\ > VIH, All other inputs < VIL, Vcc = MAX, f = 0, Outputs Open Power Supply Current: Standby "L" Version Only CE\ > Vcc -0.2V; Vcc = MAX VIN<Vss +0.2V or VIN>Vcc -0.2V; f = 0 "L" Version Only DESCRIPTION MAX -12 -15 -17 -20 -25 -35 -45 UNITS NOTES SYM ICCSP 100 100 100 90 90 80 70 mA ICCLP 75 75 75 65 65 60 50 mA ISBTSP 20 20 20 20 20 20 20 mA ISBTLP 10 10 10 10 10 10 10 mA ISBCSP 15 15 15 15 15 15 15 mA ISBCLP 5 5 5 5 5 5 mA SYM MIN MAX UNITS NOTES Input High (Logic 1) Voltage VIH 2.2 Vcc +0.5 V 1 Input Low (Logic 0) Voltage VIL -0.5 0.8 V 1, 2 0V < VIN < Vcc ILI -2 2 μA Output(s) Disabled 0V < VOUT < Vcc ILO -2 2 μA Output High Voltage IOH = -4.0 mA VOH 2.4 --- V 1 Output Low Voltage IOL = 8 mA VOL --- 0.4 V 1 VCC 4.5 5.5 V 1 Input Leakage Current Output Leakage Current CONDITIONS 5 3 Supply Voltage CAPACITANCE PARAMETER Input Capacitance Output Capactiance AS5C512K8 Rev. 7.5 01/13 CONDITIONS SYMBOL MAX UNITS NOTES TA = 25oC, f = 1MHz VIN = 0 CI 8 pF 4 Co 10 pF 4 Micross Components reserves the right to change products or specifications without notice. 3 SRAM AS5C512K8 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55oC < TA < +125oC or -40oC to +85oC; Vcc = 5V +10%) DESCRIPTION SYM -12 -15 -17 -20 -25 -35 -45 UNITS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX READ CYCLE Read Cycle Time tRC Address Access Time tAA 12 15 17 20 25 35 45 Chip Enable Access Time tACE 12 15 17 20 25 35 45 Output Hold From Address Change tOH 2 Chip Enable to Output in Low-Z tLZCE 2 Chip Disable to Output in High-Z tHZCE 0 12 Output Enable Acess Time tAOE Output Enable to Output in Low-Z tLZOE 0 Output Disable to Output in High-Z WRITE CYCLE WRITE Cycle Time tHZOE 0 15 17 2 2 2 6.5 0 7 0 8 0 0 8 0 0 10 0 0 12 0 0 15 0 20 25 0 15 0 ns ns ns 2 15 0 10 ns 2 2 10 0 8 45 2 2 8 0 8 35 2 2 8 0 7 25 2 2 7 0 6.5 20 20 ns 4, 6, 7 ns 4, 6, 7 ns ns 4, 6, 7 ns 4, 6, 7 tWC 12 15 17 20 25 35 45 ns Chip Enable to End of Write tCW 12 15 16 17 20 30 35 ns Address Valid to End of Write tAW 12 15 16 17 20 30 35 ns Address Setup Time tAS 0 0 0 0 0 0 0 ns Address Hold From End of Write tAH 0 0 0 0 0 0 0 ns WRITE Pulse Width tWP 12 15 16 17 20 30 35 ns Data Setup Time tDS 6.5 7 9 10 12 20 25 ns Data Hold Time tDH 0 0 0 0 0 0 0 ns Write Disable to Output in Low-Z tLZWE 0 Write Enable to Output in High-Z tHZWE 0 AS5C512K8 Rev. 7.5 01/13 0 6.5 0 0 7 0 0 8 0 0 8 0 0 10 0 0 15 0 20 ns 4, 6, 7 ns 4, 6, 7 Micross Components reserves the right to change products or specifications without notice. 4 SRAM SRAM AS5C512K8 AS5C512K8 Austin Semiconductor, Inc. AC TEST ACCONDITIONS TEST CONDITIONS Input pulse levels ............................................... Vss to 3.0V Input pulse levels ...................................................... Vss to 3.0V Input riseInput and fall .................................................. 3ns risetimes and fall times ......................................................... 3ns Input timing reference levels ........................................ 1.5V Input timing reference levels ............................................... 1.5V Output reference levels .................................................. 1.5V Output reference levels ........................................................ 1.5V Output load ................................................. See Figures 1 Output load ................................................. See Figures 1 and 2 167 ohms Q 167 ohms Q 1.73V C=30pF 1.73V C=5pF Fig. 2 Output Fig. Load 2 Output Load Fig. 1 Output Fig. Load 1 Output Load Equivalent Equivalent Equivalent Equivalent and 2 NOTES NOTES1. All voltages referenced to VSS (GND). 1. 2. 3. 4. 5. 6. 7. 8. All voltages to VSS< (GND). 9. 2. -2Vreferenced for pulse width 20ns -2V for < 20nson output loading and cycle rates. 3. pulse ICC iswidth dependent ICC is4.dependent on outputisloading and cycle rates. 10. This parameter guaranteed but not tested. This 5. parameter is guaranteed but not tested. Test conditions as specified with the output loading Test conditions as specified theotherwise output loading 11. as shown in Fig. 1 with unless noted. as shown in Fig. 1tLZWE, unless totherwise noted.tHZOE and tHZWE12. 6. tLZCE, LZOE, t HZCE, t t t LZCE, tLZWE, LZOE, HZOE and are specified witht HZCE, CL = 5pF as in Fig. 2.tHZWE Transition is are specified with CL = 5pF as in Fig. 2. Transition is 13. measured ±200mV from steady state voltage. measured ±200mV from steady stateand voltage. 7. At any given temperature voltage condition, 14. t t voltage condition, At any given temperature and HZCE is less than LZCE, and tHZWE is less than 15. t t t HZCE is LZWE. less than LZCE, and tHZWE is less than t LZWE. 8. WE\ is HIGH for READ cycle. WE\ 9. is HIGH forisREAD cycle. selected. Chip enables and Device continuously Device isoutput continuously enables enablesselected. are held Chip in their activeand state. output arevalid held in their state. with, latest 10.enables Address prior to,active or coincident Address valid prior chip to, orenable. coincident with, latest occurring occurring chip= enable. 11. tRC Read Cycle Time. t RC =12. Read Cycle Time. Chip enable and write enable can initiate and Chip enable and write enablecycle. can initiate and terminate a WRITE terminate a WRITE cycle. 13. Output enable (OE\) is inactive (HIGH). Output (OE\) is inactive 14.enable Output enable (OE\) is (HIGH). active (LOW). Output (OE\) active (LOW). 15.enable ASI does notiswarrant functionality nor reliability of ASI does any not product warrant in functionality nor reliability of which the junction temperature any product in which the Care junction temperature exceeds 150°C. should be taken to limit power to exceeds 150°C. Carelevels. should be taken to limit power to acceptable acceptable levels. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) Only) DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version DESCRIPTION DESCRIPTION CONDITIONS CONDITIONS SYM CE\ > VCC -0.2V CE\ > VCC -0.2V Vcc for Retention Data Vcc for Retention Data >V -0.2 or 0.2V VIN -0.2 orCC 0.2V VIN > VCC Data Retention Data Retention Current Current VDR Vcc =ICCDR 2.0V Vcc = 2.0V Chip Deselect to Data to Data Chip Deselect tCDR Operation Recovery Time Operation Recovery Time AS5C512K8 AS5C512K8 Rev. 7.5 01/13 Rev. 7.0 05/08 tR SYM MAX MINUNITS MAX NOTES UNITS MIN V 2 DR 2 ICCDR 2 V NOTES V 800 mA uA t0CDR 0 ns 4ns 10tR 10 ms 4, ms 11 4 4, 11 Micross Components the rightInc. to change without notice. Austin reserves Semiconductor, reservesproducts the rightor tospecifications change products or specifications without notice. 5 5 SRAM AS5C512K8 LOW VCC DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V 4.5V VDR>2V tR tCDR VIH- CE\ VDR VILREAD CYCLE NO. 18, 9 (Address Controlled, CE\ = OE\ = VIL, WE\ = VIH) tRC ADDRESS VALID tAA tOH I/O, DATA IN & OUT Previous Data Valid Data Valid READ CYCLE NO. 2 2 (WE\ = VIH) tRC ADDRESS tLZOE tAOE tHZOE CE\ tLZCE tACE I/O, DATA IN & OUT tHZCE Data Valid High-Z tPU tPD Icc Don’t Care Undefined AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 6 SRAM AS5C512K8 WRITE CYCLE NO. 112 (CE Controlled) tWC ADDRESS tAW tAS tAH tCW CE\ tWP1 WE\ tDH tDS Data Valid I/O, DATA IN I/O, DATA OUT High-Z High-Z WRITE CYCLE NO. 212, 13 (Write Enabled Controlled) tWC ADDRESS tAW tCW CE\ tAS tAH tWP1 WE\ tDH Data Valid I/O, DATA IN I/O, DATA OUT AS5C512K8 Rev. 7.5 01/13 High-Z High-Z Micross Components reserves the right to change products or specifications without notice. 7 SRAM AS5C512K8 WRITE CYCLE NO. 37,12, 14 (WE Controlled) tWC ADDRESS tAW CE\ tAS tAH tCW tWP2 WE\ tDH tDS Data Valid DATA IN tHZWE DATA OUT AS5C512K8 Rev. 7.5 01/13 High-Z Data Undefined tLZWE Micross Components reserves the right to change products or specifications without notice. 8 SRAM AS5C512K8 PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II) MECHANICAL DEFINITIONS 44-Pin TSOPII (Package Designators DGC & DGCR) N N/2+1 E1 1 Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. E N/2 D SEATING PLANE A ZD . b e L A1 α C N=44 Leads Symbol Millimeters Plastic TSOP (T - Type II) Inches Ref. Std. Min Max Min Max Millimeters Inches Millimeters Inches Millimeters Inches A Max ‐ Min 1.20 0.047 Symbol Min Max Min Max Min ‐ Max Min Max Min Max A1 0.05 0.15 0.002 0.006 Ref. Std. No. Leads (N) 32 50 b 0.30 0.4544 0.012 0.018 A — 1.20 —C 0.047 0.12 — 1.20 — 0.047 — 1.20 — 0.047 0.21 0.005 0.008 A1 0.05 0.15 0.002 0.00618.31 0.05 18.52 0.15 0.002 0.006 0.729 0.05 0.15 0.002 0.006 D 0.721 b 0.30 0.52 0.012 0.020 0.30 0.45 0.012 0.018 0.30 0.45 0.012 0.018 E1 10.03 10.29 0.395 0.405 C 0.12 0.21 0.005 0.008 0.12 0.21 0.005 0.008 0.12 0.21 0.005 0.008 E 11.56 11.96 0.455 0.471 D 20.82 21.08 0.820 0.830 18.31 18.52 0.721 0.729 20.82 21.08 0.820 0.830 e 0.80 E1 10.03 10.29 0.391 0.400 10.03BSC10.29 0.395 0.032 0.405 BSC 10.03 10.29 0.395 0.405 L 0.016 E 11.56 11.96 0.451 0.466 0.41 11.56 0.60 11.96 0.455 0.471 0.024 11.56 11.96 0.455 0.471 ZD BSC 0.032 REF 0.80 BSC 0.81 REF e 1.27 BSC 0.050 0.80 BSC 0.032 BSC 0.031 BSC o o o 0.024 o0.40 L 0.40 0.60 0.016 0.024 0.41 0.60 0.016 0.60 0.016 0.024 0 5 0 5 α ZD α AS5C512K8 Rev. 7.5 01/13 0.95 REF 0° 5° 0.037 REF 0° 5° 0.81 REF 0° 5° 0.032 REF 0° 5° 0.88 REF 0° 5° 0.035 REF 0° 5° Micross Components reserves the right to change products or specifications without notice. 9 Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. SRAM AS5C512K8 SRAM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* Pin 1 identifier area AS5C512K8 Micross Case #210 (Package Designator EC) MECHANICAL DEFINITIONS* SMD 5962-95600, Case Outline N ASI Case #210 (Package Designator EC) SMD 5962-95600, Case Outline N P A P R Pin 1 identifier area L2 A R 1 L2 D 1 36 L D e 36 B D1 L e B D1 E A1 E A1 SYMBOL A A1 B D D1 E e L L2 P R SMD SPECIFICATIONS MIN MAX 0.080 0.100 0.054 0.066 0.022 0.028 0.910 0.930 0.840 0.860 0.445 0.460 0.050 BSC 0.100 TYP 0.115 0.135 --0.006 0.009 TYP *All measurements are in inches. AS5C512K8 Rev. 7.5 01/13 *All measurements are in inches. AS5C512K8 Rev. 7.0 05/08 Micross Components reserves the right to change products or specifications without notice. 10 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM SRAM AS5C512K8 AS5C512K8 Austin Semiconductor, Inc. MECHANICAL MECHANICALDEFINITIONS* DEFINITIONS* ASI Case #307 (Package Designator F) F) Micross Case #307 (Package Designator SMD SMD5962-95600, 5962-95600,Case CaseOutline OutlineTT L L E E Pin 1 identifier area Pin 1 identifier area 36 e b D1 1 36 1 e D b D D1 Bottom View Bottom View S S Top View Top View c A c E2 SYMBOL A b c D D1 E E2 e L Q E2 A Q SMD SPECIFICATIONS MIN MAX 0.096 0.125 0.015 0.022 0.003 0.009 0.910 0.930 0.840 0.860 0.505 0.515 0.385 0.397 0.050 BSC 0.250 0.370 0.020 0.045 *All measurements are in inches. *All measurements are in inches. AS5C512K8 AS5C512K8 Rev. 7.0 05/08 Rev. 7.5 01/13 Q 10 11 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Micross Components reserves the right to change products or specifications without notice. SRAM AS5C512K8 MECHANICAL DEFINITIONS* Micross Case Package Designator: SOJ SMD 5962-95600, Case Outline M AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 12 SRAM SRAM Austin Semiconductor, Inc. AS5C512K8 AS5C512K8 MECHANICAL MECHANICALDEFINITIONS* DEFINITIONS* ASI Case #503 (Package Designator ECJ) Micross Case #503 (Package Designator ECJ) SMD SMD5962-95600, 5962-95600,Case CaseOutline OutlineMM P P A A L L TYP TYP L2 L2 1 1 3 636 e e D D D1D1 A2 A2 E2 E2 b b A1A1 E E SYMBOL A A1 A2 b D D1 E E2 e L L2 P SMD SPECIFICATIONS MIN MAX 0.140 0.160 0.054 0.075 0.025 0.063 0.019 0.028 0.910 0.939 0.840 0.860 0.434 0.460 0.374 0.410 0.050 BSC 0.050 0.070 0.115 0.135 --0.004 *All measurements *All measurementsare areinininches. inches. AS5C512K8 AS5C512K8 Rev. 7.07.5 05/08 Rev. 01/13 1213 Austin Semiconductor, Inc.reserves reservesthe theright righttotochange changeproducts productsororspecifications specificationswithout without notice. notice. Micross Components SRAM AS5C512K8 SRAM Austin Semiconductor, Inc. AS5C512K8 MECHANICAL DEFINITIONS* MECHANICAL DEFINITIONS* Micross Case #903 (Package Designator DJ) ASI Case #903 (Package Designator DJ) *All measurements are in inches. AS5C512K8 Rev. 7.5 01/13 *All measurements are in inches. AS5C512K8 Rev. 7.0 05/08 Micross Components reserves the right to change products or specifications without notice. 14 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM AS5C512K8 ORDERING INFORMATION 36-Pin Ceramic Flat Pack EXAMPLE: AS5C512K8F-25/XT Package Speed Device Number Type ns AS5C512K8 F -12 AS5C512K8 F -15 AS5C512K8 F -17 AS5C512K8 F -20 AS5C512K8 F -25 AS5C512K8 F -30 AS5C512K8 F -45 36-Pin CLCC EXAMPLE: AS5C512K8EC-35/XT Package Speed Device Number Type ns AS5C512K8 EC -12 AS5C512K8 EC -15 AS5C512K8 EC -17 AS5C512K8 EC -20 AS5C512K8 EC -25 AS5C512K8 EC -30 AS5C512K8 EC -45 44-Pin TSOPII - Sn/Pb Lead Finish EXAMPLE: AS5C512K8DGC-12/XT Speed Package Device Number ns Type AS5C512K8 DGC -12 AS5C512K8 DGC -15 Options** Process L L L L L L L /* /* /* /* /* /* /* Options** Process L L L L L L L /* /* /* /* /* /* /* 36-Pin Ceramic SOJ Package EXAMPLE: AS5C512K8ECJ-15/IT Package Speed Options** Process Device Number Type ns AS5C512K8 SOJ [ECJ] -12 L /* AS5C512K8 SOJ [ECJ] -15 L /* AS5C512K8 SOJ [ECJ] -17 L /* AS5C512K8 SOJ [ECJ] -20 L /* AS5C512K8 SOJ [ECJ] -25 L /* AS5C512K8 SOJ [ECJ] -30 L /* AS5C512K8 SOJ [ECJ] -45 L /* *Consult Factory for ECJ package option, SOJ is new standard. 36-Pin Plastic SOJ EXAMPLE: AS5C512K8DJ-20/XT Package Speed Options** Process Device Number Type ns + AS5C512K8 -12 L /* DJ AS5C512K8 -15 L /* DJ+ AS5C512K8 -17 L /* DJ+ AS5C512K8 -20 L /* DJ+ AS5C512K8 -25 L /* DJ+ AS5C512K8 -30 L /* DJ+ AS5C512K8 -45 L /* DJ+ +Lead Free (Pb finish is also available, consult factory) 44-Pin TSOPII - RoHS Compliant - NiPdAu Lead Finish EXAMPLE: AS5C512K8DGCR-12/IT Package Speed Device Number Process Type ns AS5C512K8 DGCR -12 /* AS5C512K8 DGCR -15 /* Process /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC **OPTIONS DEFINTIONS L = 2V Data Retention / Low Power (Consult Factory) ** L Version is not currently an available option for parts in DGC & DGCR package. AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 15 SRAM AS5C512K8 MICROSS TO DSCC PART NUMBER CROSS REFERENCE FOR SMD 5962-95600* Micross Package Designator EC Micross Package Designator ECJ Micross Part # AS5C512K8EC-12L AS5C512K8EC-12L AS5C512K8EC-15 AS5C512K8EC-15L AS5C512K8EC-20L AS5C512K8EC-25L AS5C512K8EC-35L AS5C512K8EC-45L SMD Part # 5962-9560015QNA 5962-9560016QNA 5962-9560014QNA 5962-9560013QNA 5962-9560012QNA 5962-9560011QNA 5962-9560010QNA 5962-9560009QNA Micross Part # AS5C512K8ECJ-12L AS5C512K8ECJ-12L AS5C512K8ECJ-15 AS5C512K8ECJ-15L AS5C512K8ECJ-20L AS5C512K8ECJ-25L AS5C512K8ECJ-35L AS5C512K8ECJ-45L SMD Part # 5962-9560015QMA 5962-9560016QMA 5962-9560014QMA 5962-9560013QMA 5962-9560012QMA 5962-9560011QMA 5962-9560010QMA 5962-9560009QMA AS5C512K8EC-20 AS5C512K8EC-20L AS5C512K8EC-25 AS5C512K8EC-25L AS5C512K8EC-35 AS5C512K8EC-35L AS5C512K8EC-45 AS5C512K8EC-45L 5962-9560004MNA 5962-9560008MNA 5962-9560003MNA 5962-9560007MNA 5962-9560002MNA 5962-9560006MNA 5962-9560001MNA 5962-9560005MNA AS5C512K8ECJ-20 AS5C512K8ECJ-20L AS5C512K8ECJ-25 AS5C512K8ECJ-25L AS5C512K8ECJ-35 AS5C512K8ECJ-35L AS5C512K8ECJ-45 AS5C512K8ECJ-45L 5962-9560004MMA 5962-9560008MMA 5962-9560003MMA 5962-9560007MMA 5962-9560002MMA 5962-9560006MMA 5962-9560001MMA 5962-9560005MMA Micross Package Designator F Micross Part # AS5C512K8F-12L AS5C512K8F-12L AS5C512K8F-15 AS5C512K8F-15L AS5C512K8F-20L AS5C512K8F-25L AS5C512K8F-35L AS5C512K8F-45L SMD Part # 5962-9560015QTA 5962-9560016QTA 5962-9560014QTA 5962-9560013QTA 5962-9560012QTA 5962-9560011QTA 5962-9560010QTA 5962-9560009QTA AS5C512K8F-20 AS5C512K8F-20L AS5C512K8F-25 AS5C512K8F-25L AS5C512K8F-35 AS5C512K8F-35L AS5C512K8F-45 AS5C512K8F-45L 5962-9560004MTA 5962-9560008MTA 5962-9560003MTA 5962-9560007MTA 5962-9560002MTA 5962-9560006MTA 5962-9560001MTA 5962-9560005MTA * Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 16 SRAM AS5C512K8 MICROSS TO DSCC PART NUMBER CROSS REFERENCE FOR SMD 5962-95613* Micross Package Designator EC Micross Package Designator ECJ Micross Part # AS5C512K8EC-12/H AS5C512K8EC-12L/H AS5C512K8EC-15/H AS5C512K8EC-17/H AS5C512K8EC-17L/H AS5C512K8EC-20/H AS5C512K8EC-20L/H AS5C512K8EC-25/H AS5C512K8EC-25/H AS5C512K8EC-25L/H AS5C512K8EC-25L/H AS5C512K8EC-35/H AS5C512K8EC-35/H AS5C512K8EC-35L/H AS5C512K8EC-35L/H AS5C512K8EC-45/H AS5C512K8EC-45/H AS5C512K8EC-45L/H AS5C512K8EC-45L/H AS5C512K8EC-55/H AS5C512K8EC-55L/H SMD Part # 5962-9561329HNA 5962-9561328HNA 5962-9561314HNA 5962-9561310HNA 5962-9561324HNA 5962-9561309HNA 5962-9561323HNA 5962-9561308HNA 5962-9561313HNA 5962-9561322HNA 5962-9561327HNA 5962-9561307HNA 5962-9561312HNA 5962-9561321HNA 5962-9561326HNA 5962-9561306HNA 5962-9561311HNA 5962-9561320HNA 5962-9561325HNA 5962-9561305HNA 5962-9561319HNA Micross Part # AS5C512K8ECJ-12/H AS5C512K8ECJ-12L/H AS5C512K8ECJ-15/H AS5C512K8ECJ-17/H AS5C512K8ECJ-17L/H AS5C512K8ECJ-20/H AS5C512K8ECJ-20L/H AS5C512K8ECJ-25/H AS5C512K8ECJ-25/H AS5C512K8ECJ-25L/H AS5C512K8ECJ-25L/H AS5C512K8ECJ-35/H AS5C512K8ECJ-35/H AS5C512K8ECJ-35L/H AS5C512K8ECJ-35L/H AS5C512K8ECJ-45/H AS5C512K8ECJ-45/H AS5C512K8ECJ-45L/H AS5C512K8ECJ-45L/H AS5C512K8ECJ-55/H AS5C512K8ECJ-55L/H SMD Part # 5962-9561329HZA 5962-9561328HZA 5962-9561314HZA 5962-9561310HZA 5962-9561324HZA 5962-9561309HZA 5962-9561323HZA 5962-9561308HZA 5962-9561313HZA 5962-9561322HZA 5962-9561327HZA 5962-9561307HZA 5962-9561312HZA 5962-9561321HZA 5962-9561326HZA 5962-9561306HZA 5962-9561311HZA 5962-9561320HZA 5962-9561325HZA 5962-9561305HZA 5962-9561319HZA AS5C512K8EC-12/H AS5C512K8EC-12L/H AS5C512K8EC-15/H AS5C512K8EC-17/H AS5C512K8EC-17L/H AS5C512K8EC-20/H AS5C512K8EC-20L/H AS5C512K8EC-25/H AS5C512K8EC-25/H AS5C512K8EC-25L/H AS5C512K8EC-25L/H AS5C512K8EC-35/H AS5C512K8EC-35/H AS5C512K8EC-35L/H AS5C512K8EC-35L/H AS5C512K8EC-45/H AS5C512K8EC-45/H AS5C512K8EC-45L/H AS5C512K8EC-45L/H AS5C512K8EC-55/H AS5C512K8EC-55L/H 5962-9561329HNC 5962-9561328HNC 5962-9561314HNC 5962-9561310HNC 5962-9561324HNC 5962-9561309HNC 5962-9561323HNC 5962-9561308HNC 5962-9561313HNC 5962-9561322HNC 5962-9561327HNC 5962-9561307HNC 5962-9561312HNC 5962-9561321HNC 5962-9561326HNC 5962-9561306HNC 5962-9561311HNC 5962-9561320HNC 5962-9561325HNC 5962-9561305HNC 5962-9561319HNC AS5C512K8ECJ-12/H AS5C512K8ECJ-12L/H AS5C512K8ECJ-15/H AS5C512K8ECJ-17/H AS5C512K8ECJ-17L/H AS5C512K8ECJ-20/H AS5C512K8ECJ-20L/H AS5C512K8ECJ-25/H AS5C512K8ECJ-25/H AS5C512K8ECJ-25L/H AS5C512K8ECJ-25L/H AS5C512K8ECJ-35/H AS5C512K8ECJ-35/H AS5C512K8ECJ-35L/H AS5C512K8ECJ-35L/H AS5C512K8ECJ-45/H AS5C512K8ECJ-45/H AS5C512K8ECJ-45L/H AS5C512K8ECJ-45L/H AS5C512K8ECJ-55/H AS5C512K8ECJ-55L/H 5962-9561329HZC 5962-9561328HZC 5962-9561314HZC 5962-9561310HZC 5962-9561324HZC 5962-9561309HZC 5962-9561323HZC 5962-9561308HZC 5962-9561313HZC 5962-9561322HZC 5962-9561327HZC 5962-9561307HZC 5962-9561312HZC 5962-9561321HZC 5962-9561326HZC 5962-9561306HZC 5962-9561311HZC 5962-9561320HZC 5962-9561325HZC 5962-9561305HZC 5962-9561319HZC * Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 17 SRAM AS5C512K8 MICROSS TO DSCC PART NUMBER CROSS REFERENCE FOR SMD 5962-95613* Micross Package Designator F Micross Part # AS5C512K8F-12/H AS5C512K8F-12L/H AS5C512K8F-15/H AS5C512K8F-17/H AS5C512K8F-17L/H AS5C512K8F-20/H AS5C512K8F-20L/H AS5C512K8F-25/H AS5C512K8F-25/H AS5C512K8F-25L/H AS5C512K8F-25L/H AS5C512K8F-35/H AS5C512K8F-35/H AS5C512K8F-35L/H AS5C512K8F-35L/H AS5C512K8F-45/H AS5C512K8F-45/H AS5C512K8F-55/H AS5C512K8F-55L/H AS5C512K8F-45L/H AS5C512K8F-45L/H SMD Part # 5962-9561329HUA 5962-9561328HUA 5962-9561314HUA 5962-9561310HUA 5962-9561324HUA 5962-9561309HUA 5962-9561323HUA 5962-9561308HUA 5962-9561313HUA 5962-9561322HUA 5962-9561327HUA 5962-9561307HUA 5962-9561312HUA 5962-9561321HUA 5962-9561326HUA 5962-9561306HUA 5962-9561311HUA 5962-9561305HUA 5962-9561319HUA 5962-9561320HUA 5962-9561325HUA AS5C512K8F-12/H AS5C512K8F-12L/H AS5C512K8F-15/H AS5C512K8F-17/H AS5C512K8F-17L/H AS5C512K8F-20/H AS5C512K8F-20L/H AS5C512K8F-25/H AS5C512K8F-25/H AS5C512K8F-25L/H AS5C512K8F-25L/H AS5C512K8F-35/H AS5C512K8F-35/H AS5C512K8F-35L/H AS5C512K8F-35L/H AS5C512K8F-45/H AS5C512K8F-45/H AS5C512K8F-55/H AS5C512K8F-55L/H AS5C512K8F-45L/H AS5C512K8F-45L/H 5962-9561329HUC 5962-9561328HUC 5962-9561314HUC 5962-9561310HUC 5962-9561324HUC 5962-9561309HUC 5962-9561323HUC 5962-9561308HUC 5962-9561313HUC 5962-9561322HUC 5962-9561327HUC 5962-9561307HUC 5962-9561312HUC 5962-9561321HUC 5962-9561326HUC 5962-9561306HUC 5962-9561311HUC 5962-9561305HUC 5962-9561319HUC 5962-9561320HUC 5962-9561325HUC * Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 18 SRAM AS5C512K8 DOCUMENT TITLE 512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT REVISION HISTORY Rev # 7.1 HistoryRelease Date Updated 36 lead SOJ Drawing September 2008 Status Release 7.2 Added Micross Information Release January 2010 7.3 Expanded package offering to include March 2011 Copper Lead Frames and RoHS compliancy, pages 1&14, changed elect. char. limits: From: To: ICCSP 225mA for all speeds 100mA for -12,-15 & -17 90mA for -20 & -25 80mA for -35 70mA for -45 ICCLP 180mA for all speeds 75mA for -12,-15 & -17 65mA for -20 & -25 60mA for -35 50mA for -45 ISBTSP 60mA for all speeds 20mA for all speeds ISBTLP 30mA for all speeds 10mA for all speeds ISBCSP 25mA for all speeds 15mA for all speeds ISBCLP 10mA for all speeds 5mA for all speeds ILI ±10µA±2µA CI 12pF8pF CO 14pF10pF tAH 1ns for all speeds 0ns for all speeds tHZWE 25ns -35 & 30ns -45 15ns -35 & 20ns -45 Release 7.4 Updated Data Retention Electrical Characteristics (L Version Only) ICCDR max. from 800 uA to 4.5 mA Release August 2012 7.5 Updated Data Retention Electrical January 2013 Release Characteristics (L Version Only) ICCDR max. from 4.5mA to 2mA AS5C512K8 Rev. 7.5 01/13 Micross Components reserves the right to change products or specifications without notice. 19