Preliminary Datasheet CR8CM-12A R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 600V - 8A - Thyristor Medium Power Use Features • IT (AV) : 8 A • VDRM : 600 V • IGT : 15 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1 2 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 7 CR8CM-12A Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Preliminary Symbol IT (RMS) IT (AV) Ratings 12.6 8 Unit A A ITSM 120 A I2t 72 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +125 – 40 to +125 2.1 W W V V A °C °C g Conditions Commercial frequency, sine half wave Note1 180° conduction, Tc = 99°C 50 Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0 Unit mA Test conditions Tj = 125°C, VRRM applied Repetitive peak off-state current On-state voltage IDRM VTM — — — — 2.0 1.4 mA V Tj = 125°C, VDRM applied Gate trigger voltage VGT — — 1.0 V Tc = 25°C, ITM = 25 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Gate non-trigger voltage Gate trigger current Holding current Thermal resistance VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM IGT IH Rth (j-c) — — — — 15 — 15 — 2.0 mA mA °C/W Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 Page 2 of 7 CR8CM-12A Preliminary Performance Curves Rated Surge On-State Current 103 7 5 3 2 Surge On-State Current (A) 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 100 7 5 3 2 1 2 3 4 × 100 (%) Gate Trigger Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 50Hz) Gate Characteristics Gate Trigger Current vs. Junction Temperature VFGM = 6V VGT = 1V PGM = 5W PG(AV) = 0.5W IGT = 15mA × 100 (%) On-State Voltage (V) VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 Gate Trigger Voltage (Tj = t°C) 180 0 100 5 Gate Trigger Current (Tj = 25°C) 102 7 5 3 2 0 Gate Trigger Current (Tj = t°C) 100 Gate Voltage (V) 200 Tc = 125°C 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 101 100 10–1 –3 10 10–2 10–1 100 101 Time (s) Page 3 of 7 CR8CM-12A Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) Case Temperature (°C) 16 180° 14 12 120° 90° θ = 30° 60° 10 8 6 θ 4 360° 2 4 6 8 10 14 12 θ 120 360° 80 180° 60 120° 90° 40 0 0 16 Resistive, inductive loads 100 60° θ = 30° 2 4 6 8 10 14 12 16 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 20 160 18 140 16 180° 14 θ = 30° 12 120° 90° 60° 10 8 6 θ 4 θ 360° 2 0 0 Resistive loads 2 4 6 8 10 12 80 180° 60 120° 90° 40 0 0 16 θ 100 60° 20 14 θ 360° 120 θ = 30° Resistive loads 2 4 6 8 10 12 14 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 20 16 DC 60° 12 270° θ = 30° 10 8 6 θ 4 360° 2 4 6 8 10 12 14 Average On-State Current (A) R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 16 θ 360° 120 100 80 60 40 20 Resistive, inductive loads 2 Resistive, inductive loads 140 90° 120° 14 0 0 16 160 180° 18 Case Temperature (°C) Average Power Dissipation (W) 140 20 Resistive, inductive loads 2 0 0 Average Power Dissipation (W) 160 18 Case Temperature (°C) Average Power Dissipation (W) 20 0 0 180° 270° 60° DC θ = 30° 90° 120° 2 4 6 8 10 12 14 16 Average On-State Current (A) Page 4 of 7 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Breakover Voltage (dv/dt = vV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Preliminary Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Tj = 125°C Typical Example 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 7 5 80 Turn-Off Time (μs) Typical Example 3 2 102 7 5 3 2 IT = 8A, 70 – di/dt = 5A/μs, VD = 300V, 60 dv/dt = 20V/μs, VR = 50V 50 40 30 Typical Example 20 Distribution 10 101 –60 –40 –20 0 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Repetitive Peak Reverse Voltage (Tj = t°C) × 100 (%) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) CR8CM-12A 103 Typical Example 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (μs) Page 5 of 7 CR8CM-12A Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS1034EJ0300 Rev.3.00 Jul 30, 2013 Page 6 of 7 CR8CM-12A Preliminary Ordering Information Orderable Part Number CR8CM-12A#BB0 CR8CM-12A-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. 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