ADVANCE INFORMATION
MX29LV040
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE
3V ONLY EQUAL SECTOR FLASH MEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8 only
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55R/70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- 8 equal sector of 64K-Byte each
- Byte Programming (9us typical)
- Sector Erase (Sector structure 64K-Byte x8)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Any combination of sectors can be erased with erase
suspend/resume function.
- Tempoary sector unprotect allows code changes in
previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
- 32-pin PLCC
- 32-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
during erase and programming, while maintaining maximum EPROM compatibility.
The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040 is
packaged in 32-pin PLCC and TSOP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29LV040 uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The standard MX29LV040 offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29LV040 has separate chip enable (CE) and output
enable (OE) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV040 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
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MX29LV040
PIN CONFIGURATIONS
32 TSOP (Standard Type) (8mm x 20mm)
A7
A17
0
0
1
1
0
0
1
1
A17
VCC
32
WE
A18
A16
1
30
29
A14
A6
A13
A5
A8
A3
A9
MX29LV040
9
25
A11
A2
OE
A1
A10
A0
CE
21
20
Q5
17
Q7
Q6
13
14
Q4
Q0
PIN DESCRIPTION
Table 1. MX29LV040 SECTOR ADDRESS TABLE
A18
0
0
0
0
1
1
1
1
4
A4
SECTOR STRUCTURE
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
5
Q3
MX29LV040
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
GND
Q2
Q1
Q0
A0
A1
A2
A3
GND
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Q2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Q1
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
A15
A12
32 PLCC
A16
0
1
0
1
0
1
0
1
Address Range
00000h-0FFFFh
10000h-1FFFFh
20000h-2FFFFh
30000h-3FFFFh
40000h-4FFFFh
50000h-5FFFFh
60000h-6FFFFh
70000h-7FFFFh
SYMBOL
PIN NAME
A0~A18
Address Input
Q0~Q7
Data Input/Output
CE
Chip Enable Input
WE
Write Enable Input
OE
Output Enable Input
GND
Ground Pin
VCC
+3.0V single power supply
Note:All sectors are 64 Kbytes in size.
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MX29LV040
BLOCK DIAGRAM
CE
OE
WE
CONTROL
INPUT
HIGH VOLTAGE
LOGIC
LATCH
BUFFER
Y-DECODER
AND
X-DECODER
ADDRESS
A0-A18
PROGRAM/ERASE
WRITE
STATE
MACHINE
(WSM)
STATE
REGISTER
MX29LV040
FLASH
ARRAY
Y-PASS GATE
SENSE
AMPLIFIER
PGM
DATA
HV
ARRAY
SOURCE
HV
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q7
I/O BUFFER
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MX29LV040
AUTOMATIC PROGRAMMING
AUTOMATIC ERASE ALGORITHM
The MX29LV040 is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need
to have time out sequence nor to verify the data programmed. The typical chip programming time at room
temperature of the MX29LV040 is less than 10 seconds.
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the
status of the erasing operation.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 11 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase
are controlled internally within the device.
Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whichever happens first.
AUTOMATIC SECTOR ERASE
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV040 electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection.
The MX29LV040 is sector(s) erasable using MXIC's Auto
Sector Erase algorithm. The Automatic Sector Erase
algorithm automatically programs the specified sector(s)
prior to electrical erase. The timing and verification of
electrical erase are controlled internally within the device. An erase operation can erase one sector, multiple
sectors, or the entire device.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program verification, and counts the number of sequences.
The device provides an unlock bypass mode with faster
programming. Only two write cycles are needed to program a word or byte, instead of four. A status bit similar
to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as
to the status of the programming operation. Refer to write
operation status-table6, for more information on these
status bits.
AUTOMATIC SELECT
The automatic select mode provides manufacturer and
device identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the device to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9 and other address pin A6, A1, and A0 as referring
to Table 2. In addition, to access the automatic select
codes in-system, the host can issue the automatic se
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MX29LV040
lect command through the command register without
requiring VID, as shown in table 3.
To verify whether or not sector being protected, the sector address must appear on the appropriate highest order address bit (see Table 1 and Table 2). The rest of
address bits, as shown in table3, are don't care. Once
all necessary bits have been set as required, the programming equipment may read the corresponding identifier code on Q7~Q0.
TABLE 2. MX29LV040 AUTOMATIC SELECT MODE OPERATION
Description
Read Silicon ID
CE
OE
WE
A18
A15
|
|
A16
A10
A9
A8
A6
|
A5
A1
A0
|
A7
Q7~Q0
A2
L
L
H
X
X
VID
X
L
X
L
L
C2H
L
L
H
X
X
VID
X
L
X
L
H
4FH
Manfacturer Code
Read Silicon ID
01H
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
H
L
(protected)
00H
(unprotected)
NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High
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MX29LV040
TABLE 3. MX29LV040 COMMAND DEFINITIONS
Command
Bus
First Bus
Cycle
Cycle Addr
Second Bus
Cycle
Data Addr
Third Bus
Cycle
Fourth Bus
Cycle
Data Addr
Data Addr
Data
Reset
1
XXXH F0H
Read
1
RA
Read Manufacturer ID
4
555H AAH 2AAH
55H
555H
90H X00H C2H
Read Silicon ID
4
555H AAH 2AAH
55H
555H
90H X01H 4FH
Sector Protect
4
555H AAH 2AAH
55H
555H
90H (SA)
Fifth Bus
Cycle
Addr
Sixth Bus
Cycle
Data Addr
Data
RD
Verify
x02H
00H
01H
Porgram
4
555H AAH 2AAH
55H
555H
A0H PA
PD
Chip Erase
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
555H 10H
Sector Erase
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
SA
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
30H
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 2)
DDI = Data of Device identifier : C2H for manufacture code, 4FH for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2.PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.
3. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it
means the sector is still not being protected.
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MX29LV040
COMMAND DEFINITIONS
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 3 defines the valid register command
TABLE 4. MX29LV040 BUS OPERATION
ADDRESS
DESCRIPTION
CE
OE
WE
A18 A15
A9
A16 A10
A8
A6
A7
A5
A1
A0
Q0~Q7
A2
Read
L
L
H
AIN
Dout
Write
L
H
L
AIN
DIN(3)
Reset
X
X
X
X
High Z
Output Disable
L
H
H
X
High Z
Standby
Vcc±0.3V
X
X
X
High Z
Sector Protect
L
H
L
SA
X
X
X
L
X
H
L
X
Chip Unprotect
L
H
L
X
X
X
X
H
X
H
L
X
Sector Protection Verify
L
L
H
SA
X
VID
X
L
X
H
L
CODE(5)
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 3.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 3 for valid Data-In during a write operation.
4. X can be VIL or VIH, L=Logic Low=VIL, H=Logic High=VIH.
5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.
6. A18~A13=Sector address for sector protect.
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MX29LV040
REQUIREMENTS FOR READING ARRAY
DATA
Refer to the Autoselect Mode and Autoselect Command
Sequence section for more information.
To read array data from the outputs, the system must
drive the CE and OE pins to VIL. CE is the power control
and selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The "AC
Characteristics" section contains timing specification
table and timing diagrams for write operations.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory contect
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.
STANDBY MODE
When the sysytem is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, independent of the OE input.
The device enters the CMOS standby mode when the
CE pin is both held at VCC±0.3V. (Note that this is a
more restricted voltage range than VIH.) If CE is held at
VIH, but not within VCC±0.3V, the device will be in the
standby mode, but the standby currect will be greater.
The device requires standard access time (tCE) for read
access when the device is in either of these standby
modes, before itis ready to read data.
WRITE COMMANDS/COMMAND
SEQUENCES
To program data to the device or erase sectors of memory
, the sysytem must drive WE and CE to VIL, and OE to
VIH.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
The device features an Unlock Bypass mode to facilitate
faster programming. Once the device enters the Unlock
Bypass mode, only two write cycles are required to
program a byte, instead of four. The "byte Program
Command Sequence" section has details on
programming data to the device using both standard and
Unlock Bypass command sequences.
ICC3 in the DC Characteristicstable represents the
standby current specification.
OUTPUT DISABLE
An erase operation can erase one sector, multiple sectors
, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector.
The "Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 3 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data."section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
With the OE input at a logic high level (VIH), output from
the devices are disabled. This will cause the output pins
to be in a high impedance state.
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
reqister (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command must then be written to place the device in the
desired state.
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MX29LV040
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to provide any
control or timing during these operations.
SILICON-ID-READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage(VID). However, multiplexing high voltage
onto address lines is not generally desired system design practice.
The MX29LV040 contains a Silicon-ID-Read operation
to supple traditional PROM programming methodology.
The operation is initiated by writing the read silicon ID
command sequence into the command register. Following the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H. A read
cycle with A1=VIL, A0=VIH returns the device code of
4FH for MX29LV040.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 6), indicating the erase operation
exceed internal timing limit.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
The automatic erase begins on the rising edge of the
last WE or CE pulse, whichever happens first in the
command sequence and terminates when the data on
Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns
to the Read mode.
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H.
TABLE 5. EXPANDED SILICON ID CODE
Pins
A0
A1
Q7
Q6
Q5
Q4
Q3
Q2
Q1 Q0
Code(Hex)
Manufacture code
VIL
VIL
X
1
0
0
0
0
1
0
C2H
Device code
VIH
VIL
0
1
0
0
1
1
1
1
4FH
Sector Protection Verification
VIL
VIH
0
0
0
0
0
0
0
0
00H (Unprotected)
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MX29LV040
READING ARRAY DATA
SECTOR ERASE COMMANDS
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See rase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later, while the command(data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
RESET COMMAND
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins,however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command must be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
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MX29LV040
Table 6. Write Operation Status
Status
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Q7
(Note1)
Q6
Q5
(Note2)
Q3
Q2
Q7
Toggle
0
N/A
No
Toggle
0
Toggle
0
1
Toggle
1
No
Toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
Q7
Toggle
0
N/A
N/A
Q7
Toggle
1
N/A
No
Toggle
0
Toggle
1
1
Toggle
Q7
Toggle
1
N/A
N/A
In Progress
Erase Suspended Mode
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
Byte Program in Auto Program Algorithm
Exceeded
Time Limits
Auto Erase Algorithm
Erase Suspend Program
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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MX29LV040
ERASE SUSPEND
program pulse and verify margin.
This command only has meaning while the state machine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 100us to suspend the erase
operations. However, When the Erase Suspend command
is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends
the erase operation. After this command has been executed, the command register will initiate erase suspend
mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to
the Read Memory Array, Erase Resume and program
commands.
The device provides Q2, Q3, Q5, Q6, Q7 to determine
the status of a write operation. If the program operation
was unsuccessful, the data on Q5 is "1"(see Table 7),
indicating the program operation exceed internal timing
limit. The automatic programming operation is completed
when the data read on Q6 stops toggling for two consecutive read cycles and the data on Q7 and Q6 are
equivalent to data written to these two bits, at which
time the device returns to the Read mode(no program
verify command is required).
WORD/BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 3 shows the address
and data requirements for the byte program command
sequence.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend program operation is complete, the system can once again
read array data within non-suspended sectors.
ERASE RESUME
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operat ion. The Byte Program command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.
AUTOMATIC PROGRAM COMMANDS
To initiate Automatic Program mode, A three-cycle command sequence is required. There are two "unlock" write
cycles. These are followed by writing the Automatic Program command A0H.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
Once the Automatic Program command is initiated, the
next WE pulse causes a transition to an active programming operation. Addresses are latched on the falling
edge, and data are internally latched on the rising edge
of the WE or CE, whichever happens first. The rising
edge of WE or CE, whichever happens first, also begins
the programming operation. The system is not required
to provide further controls or timings. The device will
automatically provide an adequate internally generated
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12
MX29LV040
on the following read cycles. This is because Q7 may
change asynchr onously with Q0-Q6 while Output Enable (OE) is asserted low.
WRITE OPERSTION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6 and Q7. Table
10 and the following subsections describe the functions
of these bits. Q7 and Q6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence(prior to the program or erase operation), and during the sector timeout.
Q7: Data Polling
The Data Polling bit, Q7, indicates to the host sys-tem
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data
Polling is valid after the rising edge of the final WE pulse
in the program or erase command sequence.
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6
stops toggling.
During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming during Er ase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program
address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data.
After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to
this, the device outputs the "complement,” or "0".” The
system must provide an address within any of the sectors selected for erasure to read valid status information
on Q7.
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. However, the system must also use Q2
to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7.
If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program command sequence is written, then returns to reading array
data.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm is complete.
Table 6 shows the outputs for Toggle Bit I on Q6.
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
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MX29LV040
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively eraseing (that is,
the Automatic Erase alorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.
Q5
Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits
are required for sectors and mode information. Refer to
Table 6 to compare outputs for Q2 and Q6.
If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or combination of sectors are bad.
If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfuly completed the program or erase operation. If it is still toggling, the device did not complete the
operation successfully, and the system must write the
reset command to return to reading array data.
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
Q3
Sector Erase Timer
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling
and Toggle Bit are valid after the initial sector erase command sequence.
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MX29LV040
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.
POWER-UP SEQUENCE
The MX29LV040 powers up in the Read only mode. In
addition, the memory contents may only be altered after
successful completion of the predefined command sequences.
SECTOR PROTECTION
The MX29LV040 features hardware sector protection.
This feature will disable both program and erase operations for these sectors protected. To activate this mode,
the programming equipment must force VID on address
pin A9 and OE (suggest VID = 12V). Programming of
the protection circuitry begins on the falling edge of the
WE pulse and is terminated on the rising edge. Please
refer to sector protect algorithm and waveform.
DATA PROTECTION
The MX29LV040 is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transition. During power up the device automatically resets
the state machine in the Read mode. In addition, with
its control register architecture, alteration of the memory
contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles
resulting from VCC power-up and power-down transition
or system noise.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=VIH,
A0=VIL, A6=VIL, it will produce a logical "1" code at
device output Q0 for a protected sector. Otherwise the
device will produce 00H for the unprotected sector. In
this mode, the addresses,except for A1, are don't care.
Address locations with A1 = VIL are reserved to read
manufacturer and device codes.(Read Silicon ID)
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE
= VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.
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MX29LV040
CHIP UNPROTECT
The MX29LV040 also features the chip unprotect mode,
so that all sectors are unprotected after chip unprotect is
completed to incorporate any changes in the code. It is
recommended to protect all sectors before activating
chip unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.
Refer to chip unprotect algorithm and waveform for the
chip unprotect algorithm. The unprotection mechanism
begins on the falling edge of the WE pulse and is
terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
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MX29LV040
ABSOLUTE MAXIMUM RATINGS
OPERATING RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . . . . -40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA ). . . . . . . . . -55°C to +125°C
VCC Supply Voltages
VCC for regulated voltage range . . . . . +3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to
20 ns.
2. Minimum DC input voltage on pins A9, OE, and
RESET is -0.5 V. During voltage transitions, A9, OE,
and RESET may overshoot VSS to -2.0 V for periods
of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Rat-ings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
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MX29LV040
Table 8. CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL
PARAMETER
MAX.
UNIT
CONDITIONS
CIN1
Input Capacitance
MIN.
TYP
8
pF
VIN = 0V
CIN2
Control Pin Capacitance
12
pF
VIN = 0V
COUT
Output Capacitance
12
pF
VOUT = 0V
READ OPERATION
Table 9. DC CHARACTERISTICS TA = 0oC TO 70oC, VCC = 2.7V to 3.6V
Symbol
PARAMETER
ILI
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Leakage Current
±1
uA
VIN = VSS to VCC
ILIT
A9 Input Leakage Current
35
uA
VCC=VCC max; A9=12.5V
ILO
Output Leakage Current
±1
uA
VOUT = VSS to VCC, VCC=VCC max
ICC1
VCC Active Read Currect
7
12
mA
CE=VIL, OE=VIH
2
4
mA
@5MHz
@1MHz
ICC2
VCC Active write Currect
15
30
mA
CE=VIL, OE=VIH
ICC3
VCC Standby Currect
0.2
5
uA
CE;VCC ± 0.3V
ICC4
VCC Standby Currect
0.2
5
uA
CE; VCC ± 0.3V
0.2
5
uA
VIH=VCC ± 0.3V;VIL=VSS ± 0.3V
-0.5
0.8
V
0.7xVCC
VCC+ 0.3
V
11.5
12.5
V
VCC=3.3V
0.45
V
IOL = 4.0mA, VCC= VCC min
During Reset
ICC5
Automative sleep mode
VIL
Input Low Voltage(Note 1)
VIH
Input High Voltage
VID
Voltage for Auto
Select and Temporary
Sector Unprotect
VOL
Output Low Voltage
VOH1
Output High Voltage(TTL)
VOH2
Output High Voltage
0.85xVCC
IOH = -2mA, VCC=VCC min
VCC-0.4
IOH = -100uA, VCC min
(CMOS)
VLKO
Low VCC Lock-out
2.3
2.5
V
Voltage
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
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MX29LV040
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
±5% for MX29LV040-55R)
(TA = 0oC to 70oC, VCC = 3.3V±
Table 11. READ OPERATIONS
SYMBOL PARAMETER
29LV040-55R
29LV040-70
29LV040-90
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
UNIT CONDITIONS
tRC
Read Cycle Time (Note 1)
55
70
90
ns
tACC
Address to Output Delay
55
70
90
ns
CE=OE=VIL
tCE
CE to Output Delay
55
70
90
ns
OE=VIL
tOE
OE to Output Delay
30
30
35
ns
CE=VIL
tDF
OE High to Output Float (Note1) 0
25
30
ns
CE=VIL
tOEH
Output Enable Read
0
0
0
ns
Hold Time
10
10
10
ns
0
0
0
ns
Toggle and
0
25
0
Data Polling
tOH
Address to Output hold
CE=OE=VIL
NOTE:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
TEST CONDITIONS:
• Input pulse levels: 0V/3.0V.
• Input rise and fall times is equal to or less than 5ns.
• Output load: 1 TTL gate + 100pF (Including scope and
jig), for 29LV040-90. 1 TTL gate + 30pF (Including
scope and jig) for 29LV040-70 & 29LV040-55R.
• Reference levels for measuring timing: 1.5V.
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MX29LV040
Figure 1. SWITCHING TEST CIRCUITS
DEVICE UNDER
TEST
2.7K ohm
+3.3V
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=100pF Including jig capacitance
CL=30pF for MX29LV040-70 & MX29LV040-55R
Figure 2. SWITCHING TEST WAVEFORMS
3.0V
1.5V
1.5V
TEST POINTS
0V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
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MX29LV040
Figure 3. READ TIMING WAVEFORMS
tRC
VIH
Addresses
ADD Valid
VIL
tACC
tCE
CE
VIH
VIL
WE
VIH
VIL
tOE
tOEH
tDF
VIH
OE
VIL
tACC
Outputs
VOH
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
VIH
RESET
VIL
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MX29LV040
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
±5% for MX29LV040-55R)
(TA = 0oC to 70oC, VCC = 3.3V±
Table 11. Erase/Program Operations
29LV040-55R
29LV040-70
29LV040-90
SYMBOL PARAMETER
MIN.
MIN.
MIN.
tWC
Write Cycle Time (Note 1)
55
70
90
ns
tAS
Address Setup Time
0
0
0
ns
tAH
Address Hold Time
45
45
45
ns
tDS
Data Setup Time
35
35
45
ns
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
0
ns
MAX.
MAX.
MAX.
UNIT
(OE High to WE Low)
tCS
CE Setup Time
0
0
0
ns
tCH
CE Hold Time
0
0
0
ns
tWP
Write Pulse Width
35
35
35
ns
tWPH
Write Pulse Width High
30
30
30
ns
tWHWH1 Programming Operation (Note 2)
9(TYP.)
9(TYP.)
9(TYP.)
us
tWHWH2 Sector Erase Operation (Note 2)
0.7(TYP.)
0.7(TYP.)
0.7(TYP.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
50
us
tRB
Recovery Time from RY/BY
0
0
0
ns
tBUSY
Program/Erase Vaild to RY/BY Delay 90
90
90
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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MX29LV040
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
±5% for MX29LV004T/B-55R)
(TA = 0oC to 70oC, VCC = 3.3V±
Table 12. Alternate CE Controlled Erase/Program Operations
29LV040-55R
29LV040-70
29LV040-90
SYMBOL PARAMETER
MIN.
MIN.
MIN.
tWC
Write Cycle Time (Note 1)
55
70
70
ns
tAS
Address Setup Time
0
0
0
ns
tAH
Address Hold Time
45
45
45
ns
tDS
Data Setup Time
35
35
45
ns
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
tGHEL
Read Recovery Time Before Write 0
0
0
ns
tWS
WE Setup Time
0
0
0
ns
tWH
WE Hold Time
0
0
0
ns
tCP
CE Pulse Width
35
35
35
ns
tCPH
CE Pulse Width High
30
30
30
ns
tWHWH1 Programming Operation(note2)
9(Typ.)
9(Typ.)
9(Typ.)
us
tWHWH2 Sector Erase Operation (note2)
0.7(Typ.)
0.7(Typ.)
0.7(Typ.)
sec
MAX.
MAX.
MAX. UNIT
NOTE:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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MX29LV040
Figure 4. COMMAND WRITE TIMING WAVEFORM
VCC
Addresses
3V
VIH
ADD Valid
VIL
tAH
tAS
WE
VIH
VIL
tOES
tWPH
tWP
tCWC
CE
VIH
VIL
tCS
OE
tCH
VIH
VIL
tDS
tDH
VIH
Data
DIN
VIL
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MX29LV040
AUTOMATIC PROGRAMMING TIMING
WAVEFORM
after automatic programming starts. Device outputs
DATA during programming and DATA after programming
on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling,
timing waveform)
One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking
Figure 5. AUTOMATIC PROGRAMMING TIMING WAVEFORM
Program Command Sequence(last two cycle)
tWC
555h
Address
Read Status Data (last two cycle)
tAS
PA
PA
PA
tAH
CE
tCH
tGHWL
OE
tWHWH1
tWP
WE
tCS
tWPH
tDS
tDH
A0h
Status
PD
DOUT
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
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MX29LV040
Figure 6. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Data Poll
from system
Increment
Address
No
Verify Word Ok ?
YES
No
Last Address ?
YES
Auto Program Completed
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MX29LV040
Figure 7. CE CONTROLLED PROGRAM TIMING WAVEFORM
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data Polling
Address
PA
tWC
tAS
tAH
tWH
WE
tGHEL
OE
tCP
tWHWH1 or 2
CE
tWS
tCPH
tDS
tBUSY
tDH
DQ7 DOUT
Data
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET
RY/BY
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
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MX29LV040
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
Figure 8. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
555h
VA
tAH
CE
tCH
tGHWL
OE
tWHWH2
tWP
WE
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
10h
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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MX29LV040
Figure 9. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Pall from System
NO
Data=FFh ?
YES
Auto Chip Erase Completed
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MX29LV040
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A13 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
Figure 10. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
SA
VA
tAH
CE
tCH
tGHWL
OE
tWHWH2
tWP
WE
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
30h
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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MX29LV040
Figure 11. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Last Sector
to Erase
NO
YES
Data Poll from System
NO
Data=FFh
YES
Auto Sector Erase Completed
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MX29LV040
Figure 12. ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
NO
ERASE SUSPEND
Toggle Bit checking Q6
not toggled
YES
Read Array or
Program
Reading or
Programming End
NO
YES
Write Data 30H
ERASE RESUME
Continue Erase
Another
Erase Suspend ?
NO
YES
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MX29LV040
Figure 13. TIMING WAVEFORM FOR SECTOR PROTECT/UNPROTECT
VID
VIH
RESET
SA, A6
A1, A0
Valid*
Valid*
Sector Protect or Sector Unprotect
Data
60h
1us
60h
Valid*
Verify
40h
Status
Sector Protect =150us
Sector Unprotect =15ms
CE
WE
OE
Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0.
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MX29LV040
Figure 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM
START
PLSCNT=1
RESET=VID
Wait 1us
First Write
Cycle=60H
No
Temporary Sector
Unprotect Mode
Yes
Set up sector address
Write 60H to sector address
with A6=0, A1=1, A0=0
Wait 150us
Verify sector protect :
write 40H with A6=0,
A1=1, A0=0
Increment PLSCNT
Reset PLSCNT=1
Read from sector address
No
PLSCNT=25?
Yes
Device failed
No
Data=01H ?
Yes
Protect another
sector?
Yes
No
Remove VID from RESET
Write reset command
Sector protect complete
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MX29LV040
Figure 15. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM
START
PLSCNT=1
RESET=VID
Wait 1us
First Write
Cycle=60H ?
No
Temporary Sector
Unprotect Mode
Yes
All sector
protected?
No
Protect all sectors
Yes
Set up first sector address
Sector unprotect :
write 60H with
A6=1, A1=1, A0=0
Wait 50ms
Verify sector unprotect
write 40H to sector address
with A6=1, A1=1, A0=0
Increment PLSCNT
Read from sector address
with A6=1, A1=1, A0=0
No
PLSCNT=1000?
Yes
Device failed
No
Set up next sector address
Data=00H ?
Yes
Last sector
verified?
Yes
No
Remove VID from RESET
Write reset command
Sector unprotect complete
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MX29LV040
Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION
A1
12V
3V
A9
tVLHT
A6
Verify
12V
3V
OE
tVLHT
tVLHT
tWPP 2
WE
tOESP
CE
Data
00H
F0H
tOE
A17-A12
Sector Address
Notes: tWPP1 (Write pulse width for sector protect)=100ns min.
tWPP2 (Write pulse width for sector unprotect)=100ns min.
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MX29LV040
Figure 17. CHIP UNPROTECTION ALGORITHM
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID
CE=VIL,A6=1
Activate WE Pulse
Time Out 50ms
Increment
PLSCNT
Set OE=CE=VIL
A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
No
PLSCNT=1000?
Yes
Yes
No
All sectors have
been verified?
Device Failed
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
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MX29LV040
WRITE OPERATION STATUS
Figure 18. DATA POLLING ALGORITHM
Start
Read Q7~Q0
Add.=VA(1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add.=VA
Yes
Q7 = Data ?
(2)
No
FAIL
Pass
NOTE : 1.VA=Valid address for programming
2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.
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MX29LV040
Figure 19. TOGGLE BIT ALOGRITHM
Start
Read Q7-Q0
Read Q7-Q0
Toggle Bit Q6 =
Toggle ?
(Note 1)
NO
YES
NO
Q5= 1?
YES
Read Q7~Q0 Twice
Toggle bit Q6=
Toggle?
(Note 1,2)
NO
YES
Program/Erase Operation
Not Complete,Write
Reset Command
Program/Erase
operation Complete
Note:1.Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
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MX29LV040
Figure 20. DATA POLLING TIMINGS (DURING AUTOMATIC ALOGRITHMS)
tRC
Address
VA
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tOEH
tDF
WE
tOH
DQ7
Complement
Complement
True
Valid Data
Q0-Q6
Status Data
Status Data
True
Valid Data
High Z
High Z
tBUSY
RY/BY
NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.
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MX29LV040
Figure 21. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALOGRITHMS)
tRC
VA
VA
Address
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tDF
tOEH
WE
tOH
High Z
Q6/Q2
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Status
(first raed)
Valid Data
tBUSY
RY/BY
NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
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MX29LV040
Table 13. AC CHARACTERISTICS
Parameter Std
Description
Test Setup All Speed Options Unit
tREADY1
RESET PIN Low (During Automatic Algorithms)
MAX
20
us
MAX
500
ns
to Read or Write (See Note)
tREADY2
RESET PIN Low (NOT During Automatic
Algorithms) to Read or Write (See Note)
tRP
RESET Pulse Width (During Automatic Algorithms)
MIN
500
ns
tRH
RESET High Time Before Read(See Note)
MIN
50
ns
tRB
RY/BY Recovery Time(to CE, OE go low)
MIN
0
ns
Note:Not 100% tested
Figure 22. RESET TIMING WAVFORM
RY/BY
CE, OE
tRH
RESET
tRP
tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
tRB
CE, OE
RESET
tRP
Reset Timing during Automatic Algorithms
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MX29LV040
Table 14. TEMPORARY SECTOR UNPROTECT
Parameter Std.
Description
Test Setup
AllSpeed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET Setup Time for Temporary Sector Unprotect
Min
4
us
Note:
Not 100% tested
Figure 23. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
12V
RESET
0 or Vcc
0 or Vcc
Program or Erase Command Sequence
tVIDR
tVIDR
CE
WE
tRSP
RY/BY
Figure 24. Q6 vs Q2 for Erase and Erase Suspend Operations
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
WE
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Complete
Q6
Q2
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
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MX29LV040
Figure 25. TEMPORARY SECTOR UNPROTECT ALGORITHM
Start
RESET = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)
Note :
1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
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MX29LV040
Figure 26. ID CODE READ TIMING WAVEFORM
VCC
3V
VID
VIH
ADD
A9
ADD
A0
VIL
VIH
VIL
tACC
tACC
VIH
A1
VIL
ADD
A2-A8
A10-A17
CE
VIH
VIL
VIH
VIL
WE
VIH
tCE
VIL
OE
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q15
DATA OUT
DATA OUT
VIL
C2H/00C2H
B9H/BAH (Byte)
22B9H/22BAH (Word)
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MX29LV040
Table 15. ERASE AND PROGRAMMING PERFORMANCE(1)
LIMITS
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
11
Byte Programming Time
9
300
us
Chip Programming Time
4.5
13.5
sec
PARAMETER
Erase/Program Cycles
Note:
MIN.
sec
100,000
Cycles
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3.Maximum values measured at 25°C, 2.7V.
Table 16. LATCHUP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
12.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
-100mA
+100mA
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
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MX29LV040
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
ACCESS TIME
OPERATING CURRENT
STANDBY CURRENT
(ns)
MAX.(mA)
MAX.(uA)
MX29LV040TC-55
55
30
5
32 Pin TSOP
MX29LV040TC-70
70
30
5
32 Pin TSOP
MX29LV040TC-90
90
30
5
32 Pin TSOP
MX29LV040QC-55
55
30
5
32 Pin PLCC
MX29LV040QC-70
70
30
5
32 Pin PLCC
MX29LV040QC-90
90
30
5
32 Pin PLCC
MX29LV040TI-70
70
30
5
32 Pin TSOP
MX29LV040TI-90
90
30
5
32 Pin TSOP
MX29LV040QI-70
70
30
5
32 Pin PLCC
MX29LV040QI-90
90
30
5
32 Pin PLCC
P/N:PM0722
PACKAGE
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MX29LV040
PACKAGE INFORMATION
32-PIN PLASTIC LEADED CHIP CARRIER (PLCC)
P/N:PM0722
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MX29LV040
32-PIN PLASTIC TSOP
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MX29LV040
Revision History
Revision No. Description
0.1
Added Read cycle time and Output enable hold time to READ
Operation
Modify Erase/Program Operation table and timing waveform
Modify Program/Erase Algorithm flowchart
To added write operation status
0.2
Modify Feature--10,000 minimum erase/program cycles-->100,000-Modify General Description--even after 10,000 --->100,000 erase-Del Package type: 32-pin PDIP
Modify AC Characteristics tWHWH1 9/11(Typ.)-->9(Typ.)
Del Chip Programming Time--Word Mode
Modify Erase/Program Cycle:10,000-->100,000
0.3
Delete Unlock Bypass Command Definitions
Delete Unlock Bypass Command Sequence
Modify Table 10. DC Characteristics VCC=3V±10%-->2.7V to 3.6V
0.4
Modify Timing Waveform
Modify Automatic Programming Algorithm Flowchart
Delete Figure 21. Toggle Bit Timings(During Embedded Algorithms)
Add Figure 19. Toggle Bit Alogrithm
Modify Absolute Maximum Ratings
Add Ordering Information--Industrial Grade
0.5
Change tBUSY spec. from 90ns to 90us
0.6
Correct typing error
Add tWPP1/tWPP2=100ns
To modify Package Information
0.7
Add 55ns spec
P/N:PM0722
Page
P15
Date
JUN/21/2000
P17,21,23,25
P22,24,26
P32
P1
P1
P1,2
P21
P45
P45
P6
P13
P17
P25,27,28,30
P26
P41
P39
P17
P47
P22
P22
P36
P48,49
P1,19,20,22
P23,47
JUL/18/2000
JAN/10/2001
FEB/07/2001
MAR/07/2001
JUN/29/2001
JUL/12/2001
REV. 0.7, JUL. 12, 2001
50
MX29LV040
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688
FAX:+886-3-563-2888
EUROPE OFFICE:
TEL:+32-2-456-8020
FAX:+32-2-456-8021
JAPAN OFFICE:
TEL:+81-44-246-9100
FAX:+81-44-246-9105
SINGAPORE OFFICE:
TEL:+65-348-8385
FAX:+65-348-8096
TAIPEI OFFICE:
TEL:+886-2-2509-3300
FAX:+886-2-2509-2200
MACRONIX AMERICA, INC.
TEL:+1-408-453-8088
FAX:+1-408-453-8488
CHICAGO OFFICE:
TEL:+1-847-963-1900
FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
51