ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-214AA (SMB) TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 50 A trr 20 ns VF 0.90 V TJ max. 150 °C Package DO-214AA (SMB) Diode variations Single die MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT EA EB EC ED Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG -55 to +150 °C Device marking code Operating junction and storage temperature range Revision: 30-Oct-13 Document Number: 88587 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 2.0 A SYMBOL ES2A ES2B VF (1) TA = 25 °C Maximum DC reverse current at rated DC blocking voltage Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A Maximum reverse recovery time IF = 2.0 A, VR = 30 V, dI/dt = 50 A/μs, Ir = 10 % IRM Maximum stored charge IF = 2.0 A, VR = 30 V, dI/dt = 50 A/μs, Ir = 10 % IRM Typical junction capacitance 4.0 V, 1 MHz ES2D 0.90 μA 350 20 trr TJ = 25 °C UNIT V 10 IR TA = 100 °C ES2C ns 30 trr TJ = 100 °C ns 50 TJ = 25 °C 10 Qrr TJ = 100 °C nC 25 18 CJ pF Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER ES2B ES2C 75 RJL (1) 20 RJA Typical thermal resistance ES2A (1) ES2D UNIT °C/W Note (1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED P/N PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES2D-E3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2D-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel ES2DHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel ES2DHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.0 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0 8.3 ms Single Half Sine-Wave at TL = 110 °C 50 40 30 20 10 0 80 90 100 110 120 130 140 150 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 30-Oct-13 Document Number: 88587 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ES2A, ES2B, ES2C, ES2D www.vishay.com Vishay General Semiconductor 60 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Leakage Current (µA) 10 000 TJ = 150 °C 1000 TJ = 125 °C TJ = 100 °C 100 10 TJ = 25 °C 1 0.1 0 20 40 60 80 10 100 Reverse Voltage (V) 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 30-Oct-13 Document Number: 88587 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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