IRLR8729PBF
IRLU8729PBF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
D-Pak
IRLR8729PbF
I-Pak
IRLU8729PbF
VDSS
RDS(on) max
Qg
30V
8.9mΩ
10nC
Absolute Maximum Ratings
Parameter
Max.
Units
30
V
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
58
41
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
PD @TC = 100°C
Maximum Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
ID @ TC = 25°C
ID @ TC = 100°C
c
f
f
A
260
g
g
55
W
27
0.37
-55 to + 175
Soldering Temperature, for 10 seconds
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
2014-8-16
g
1
Typ.
Max.
–––
2.73
–––
50
–––
110
Units
°C/W
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IRLR/U8729PBF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
21
–––
–––
6.0
8.9
–––
8.9
11.9
V
mV/°C Reference to 25°C, ID = 1mA
mΩ
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.2
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Conditions
VGS = 0V, ID = 250µA
µA
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
VDS = VGS, ID = 25µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Forward Transconductance
91
–––
–––
Total Gate Charge
–––
10
16
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.1
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.3
–––
Qgd
Gate-to-Drain Charge
–––
4.0
–––
ID = 20A
2.6
–––
See Fig. 16
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
4.8
–––
Qoss
Output Charge
–––
6.3
–––
nC
RG
td(on)
Gate Resistance
–––
–––
1.6
10
2.7
–––
Ω
Turn-On Delay Time
tr
Rise Time
–––
47
–––
td(off)
Turn-Off Delay Time
–––
11
–––
tf
Fall Time
–––
10
–––
Ciss
Input Capacitance
–––
1350
–––
Coss
Output Capacitance
–––
280
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
gfs
Qg
Qgodr
nA
e
e
VGS = 20V
VGS = -20V
S
VDS = 15V, ID = 20A
nC
VGS = 4.5V
VDS = 15V
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 20A
e
RG = 1.8Ω
See Fig. 14
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
c
Max.
74
Typ.
–––
d
c
Units
mJ
–––
20
A
–––
5.5
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
–––
–––
–––
–––
(Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
f
58
A
260
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
16
24
ns
Qrr
Reverse Recovery Charge
–––
19
29
nC
ton
Forward Turn-On Time
2014-8-16
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U8729PBF
1000
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
1
≤60µs PULSE WIDTH
BOTTOM
10
2.5V
Tj = 25°C
2.5V
≤60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
T J = 175°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 25A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-16
Fig 4. Normalized On-Resistance
vs. Temperature
3
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IRLR/U8729PBF
10000
5.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
ID= 20A
VGS, Gate-to-Source Voltage (V)
Crss = C gd
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
3.0
2.0
1.0
0.0
100
1
10
0
100
2
4
6
8
10
12
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
VDS= 24V
VDS= 15V
4.0
100
T J = 175°C
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-16
0
Fig 8. Maximum Safe Operating Area
4
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IRLR/U8729PBF
60
2.5
VGS(th) , Gate threshold Voltage (V)
Limited By Package
ID, Drain Current (A)
50
40
30
20
10
2.0
1.5
ID = 25µA
ID = 50µA
ID = 100µA
1.0
0
0.5
25
50
75
100
125
150
175
-75 -50 -25 0
T C , Case Temperature (°C)
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
τJ
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τC
Ri (°C/W) τi (sec)
1.251
0.000513
1.481
0.004337
C i= τi /R i
Ci = τi/Ri
0.01
0.001
1E-006
R1
R1
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-16
5
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IRLR/U8729PBF
300
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
EAS , Single Pulse Avalanche Energy (mJ)
15V
A
0.01Ω
tp
VGS
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
ID
4.4A
6.5A
BOTTOM 20A
TOP
250
200
150
100
50
0
tp
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
V DS
Fig 12b. Unclamped Inductive Waveforms
VGS
RG
Current Regulator
Same Type as D.U.T.
RD
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
50KΩ
12V
Fig 14a. Switching Time Test Circuit
.2µF
.3µF
D.U.T.
+
V
- DS
VDS
90%
VGS
3mA
IG
10%
VGS
ID
td(on)
Current Sampling Resistors
t d(off)
tf
Fig 14b. Switching Time Waveforms
Fig 13. Gate Charge Test Circuit
2014-8-16
tr
6
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IRLR/U8729PBF
Driver Gate Drive
P.W.
+
D=
Period
P.W.
Period
VGS=10V
D.U.T
-
+
-
Circuit Layout Considerations
D.U.T. ISD Waveform
• Low Stray Inductance
• Ground Plane
Reverse
• Low Leakage Inductance Recovery
Body Diode Forward
Current Transformer
Current
+ Current
di/dt
D.U.T. VDS Waveform
RG
*
•
•
•
•
Re-Applied
V Voltage +
dv/dt controlled by RG
DD
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
- Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
2014-8-16
7
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IRLR/U8729PBF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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2014-8-16
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IRLR/U8729PBF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
(;$03/( 7+,6,6$1,5)8
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1($
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IRLR/U8729PBF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
TRL
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
2014-8-16
10
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IRLR/U8729PBF
Orderable part number
Package Type
IRLR8729PBF
IRLR8729TRPBF
D-PAK
D-PAK
IRLU8729PBF
I-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and
2000
Reel
Tube/Bulk
75
Note
Qualification information†
Qualification level
Moisture Sensitivity
Level
Industrial††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by
extension of the higher Industrial level.
D-PAK
MS L1
(per JE DE C J-S T D-020D†††)
Not applicable
Yes
I-PAK
RoHS compliant
2014-8-16
11
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