HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 26 104 26 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns Maximum Ratings 360 TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TAB) TO-268 (D3) ( IXFT) G °C °C °C 1.13/10 Nm/lb.in. TO-247 TO-268 6 4 g g Features l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250µA 600 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2002 IXYS All rights reserved TJ = 25°C TJ = 125°C D = Drain TAB = Drain °C 300 TO-247 G = Gate S = Source l Symbol (TAB) W -55 ... +150 150 -55 ... +150 TJ TJM Tstg TO-247 AD (IXFH) S TC = 25°C Weight = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg PD VDSS ID25 RDS(on) V l l Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages 4.5 V l ±200 nA l 25 1 µA mA 0.25 Ω l Easy to mount Space savings High power density 98635D (6/02) IXFH 26N60Q IXFT 26N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss 14 22 S 5100 pF 560 pF 210 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 32 ns td(off) RG = 2.0 Ω (External), 80 ns 16 ns td(on) tf 150 200 Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd nC 80 nC 0.35 RthJC RthCK TO-247 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM nC 34 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26 A Repetitive; pulse width limited by TJM 104 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A IF = IS -di/dt = 100 A/µs, VR = 100 V 1 10 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1