TGS MBRF3040CT To-220f plastic-encapsulate diode Datasheet

TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF3030, 35, 40, 45, 50CT
TO-220F
SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Value
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
MBRF30
MBRF30
MBRF30
MBRF30
MBRF30
30CT
35CT
40CT
45CT
50CT
30
35
40
45
50
V
21
24.5
28
31.5
35
V
30
A
200
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IO
IFSM
PD
RΘJA
Average rectified output current
Unit
Non-Repetitive peak forward surge current
8.3ms half sine wave
B,Apr,2013
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Symbol
V(BR)
Device
Test conditions
MBRF3030CT
30
MBRF3035CT
35
MBRF3040CT
IR=1mA
MBRF3045CT
IR
VR=30V
MBRF3035CT
VR=35V
MBRF3040CT
VR=40V
MBRF3050CT
VF1
Forward voltage
VF2*
Typical total capacitance
Ctot*
MBRF3030-45CT
MBRF3050CT
MBRF3030-45CT
MBRF3050CT
MBRF3030-45CT
MBRF3050CT
Max
Unit
V
40
50
MBRF3030CT
MBRF3045CT
Typ
45
MBRF3050CT
Reverse current
Min
0.2
mA
VR=45V
VR=50V
0.7
IF=15A
0.8
0.84
IF=30A
VR=4V,f=1MHz
0.95
450
V
V
pF
400
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
B,Apr,2013
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