TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF3030, 35, 40, 45, 50CT TO-220F SCHOTTKY BARRIER RECTIFIER FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage MBRF30 MBRF30 MBRF30 MBRF30 MBRF30 30CT 35CT 40CT 45CT 50CT 30 35 40 45 50 V 21 24.5 28 31.5 35 V 30 A 200 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Average rectified output current Unit Non-Repetitive peak forward surge current 8.3ms half sine wave B,Apr,2013 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Symbol V(BR) Device Test conditions MBRF3030CT 30 MBRF3035CT 35 MBRF3040CT IR=1mA MBRF3045CT IR VR=30V MBRF3035CT VR=35V MBRF3040CT VR=40V MBRF3050CT VF1 Forward voltage VF2* Typical total capacitance Ctot* MBRF3030-45CT MBRF3050CT MBRF3030-45CT MBRF3050CT MBRF3030-45CT MBRF3050CT Max Unit V 40 50 MBRF3030CT MBRF3045CT Typ 45 MBRF3050CT Reverse current Min 0.2 mA VR=45V VR=50V 0.7 IF=15A 0.8 0.84 IF=30A VR=4V,f=1MHz 0.95 450 V V pF 400 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. B,Apr,2013