Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 1/6 CYStech Electronics Corp. N-Channel LOGIC Level Enhancement Mode Power MOSFET MTB20N03Q8 BVDSS ID RDSON(max) 30 V 8A 20mΩ Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • UIS, Rg 100% tested • Pb-free & Halogen-free package Symbol Outline MTB20N03Q8 G：Gate D：Drain S：Source MTB20N03Q8 SOP-8 Pin 1 CYStek Product Specification Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=8A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TA=25 °C Total Power Dissipation TA=100 °C Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS ID ID IDM IAS EAS EAR Limits Tj, Tstg 30 ±20 8 6 32 *1 8 3.2 1.6 *2 3 1.5 -55~+175 Symbol Rth,j-c Rth,j-a Value 25 50 PD Unit V A mJ W °C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note) Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper. Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 30 1.0 8 - 1.5 16 15.5 23 3.0 ±100 1 25 20 31 V V S nA μA μA A mΩ mΩ VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=8A VGS=±20 VDS =24V, VGS =0 VDS =20V, VGS =0, Tj=125°C VDS =10V, VGS=10V VGS =10V, ID=8A VGS =5V, ID=6A - 11 6 1.2 3.3 1115 116 82 2 - Static BVDSS VGS(th) GFS IGSS IDSS *ID(ON) *RDS(ON) Dynamic Qg (VGS=10V) *1, 2 Qg (VGS=5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Ciss Coss Crss Rg MTB20N03Q8 - nC ID=8A, VDS=15V, VGS=10V pF VGS=0V, VDS=15V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 3/6 Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Dynamic td(ON) *1, 2 11 tr 16 *1, 2 ns td(OFF) *1, 2 36 tf *1, 2 20 Source-Drain Diode Ratings and Characteristics IS *1 2.3 A ISM *3 9.2 VSD *1 1.2 V trr 50 ns Qrr 2 nC Test Conditions VDS=15V, ID=1A, VGS=10V, RG=6Ω IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB20N03Q8 MTB20N03Q8 Package SOP-8 (RoHS compliant & Halogen-free package) Shipping Marking 3000 pcs / Tape & Reel B20N03 CYStek Product Specification Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 4/6 CYStech Electronics Corp. Characteristic Curves On-Resistance Variation with Drain Current and Gate Voltage On-Region Characteristics 30 V = 10V 6V 7V 2.4 GS 25 2.2 5V VGS = 3.5 V RDS(ON) -Normalized Drain-Source On-Resistance ID - Drain Current(A) 2.0 20 4.5V 15 4V 10 5 3.5V 1.6 4.5 V 5.0 V 1.4 6.0 V 1.2 7.0 V 10 V 1.0 0.8 0 0 1 4 2 3 VDS - Drain Source Voltage(V) 6 0 5 On-Resistance Variation with Temperature I D = 8A VGS = 10V 12 18 ID - Drain Current(A) RDS(ON) - On-Resistance( Ω ) 1.3 1.0 0.7 0.07 0.06 0.05 0.04 TA = 125°C 0.03 TA = 25°C 0.02 0.01 -25 75 0 25 50 TJ - Junction Temperature (° C) 100 125 150 100 Is - Reverse Drain Current( A ) ID - Drain Current(A) 10 VGS = 0V 25 25° C TA = -55° C 15 125°C 10 5 0 MTB20N03Q8 8 6 VGS- Gate-Source Voltage( V ) Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 10V 1 4 2 Transfer Characteristics 30 20 30 ID = 8 A 0.08 1.6 0.4 -50 24 On-Resistance Variation with Gate-to-Source Voltage 0.09 1.9 RDS(on) - Normalized Drain-Source On-Resistance 4.0 V 1.8 1.5 2.5 2.0 VGS - Gate-Source Voltage( V ) 3.0 3.5 TA = 125°C 10 25° C 1 -55° C 0.1 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD - Body Diode Forward Voltage( V ) 1.2 1.4 CYStek Product Specification Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 5/6 CYStech Electronics Corp. Characteristic Curves(Cont.) Gate Charge Characteristics Capacitance Characteristics 10 1500 VDS = 5V 8 f = 1MHz VGS = 0 V 1350 10V 1200 15V Ciss 1050 Capacitance(pF) VGS - Gate-Source Voltage( V ) ID = 8A 6 4 900 750 600 450 300 2 Coss Crss 150 0 0 0 4 8 Q g - Gate Charge( nC ) 12 5 15 10 VDS - Drain-Source Voltage( V ) 0 16 ID - Drain Current( A ) P( pk ),Peak Transient Power( W ) 100μs 1ms 10ms 100ms 1s 10s DC VGS= 10V Single Pulse RθJA= 125°C/ W TA = 25°C 0.1 0.01 0.1 30 50 Single Pulse RθJA= 125° C/ W TA = 25°C RDS(ON) Limit 1 25 Single Pulse Maximum Power Dissipation Maximum Safe Operating Area 100 10 20 1 10 VDS - Drain-Source Voltage( V ) 40 30 20 10 0 0.001 100 0.01 1 0.1 10 100 1000 Transient Thermal Response Curve 1 r( t ),Normalized Effective Transient Thermal Resistance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: 0.02 PDM 0.01 t1 t2 0.01 1.Duty Cycle,D = t1 t2 Single Pulse 2.RθJA =125° C/ W 3.TJ - TA = P * RθJA (t) 4.R JA(t)=r(t) + RθJA θ 0.001 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 t 1 ,Time (sec) MTB20N03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 6/6 SOP-8 Dimension Right side View G Top View A Marking: I C B Device Name H Date Code J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB20N03Q8 CYStek Product Specification