CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT4953G provide the designer with the best
Advanced Trench Process Technology
combination of fast switching , ruggedized device
High Density Cell Design For Ultra Low On-Resistance
design , low on-resistance and cost-effectiveness.
Fully Characterized Avalanche Voltage and Current
The SOP-8 package is universally preferred for all
Improved Shoot-Through FOM
commercial-industrial mount applications and suited for
SO-8 Package Design
low voltage applications such as DC/DC converters.
APPLICATIONS
Power Management in Notebook
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
SYMBOL
8-PIN SOP (S08)
Top View
P-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT4953G
Package
SOP-8
*Note: G : Suffix for Pb Free Product
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDS
-30
V
Gate- Source Voltage
VGS
±20
V
ID
-4.5
A
IDM
-23
A
PD
2
W
TJ
-55 to150
℃
TSTG
-55 to 150
℃
0.02
℃/W
62.5
℃/W
1
TA=25℃
Continuous Drain Current
Pulsed Drain Current
2
1
TA=25℃
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Linear Derating Factor
1
Thermal Resistance Junction-ambient (Max)
2007/03/01 Rev1.0
Rthj-amb
Champion Microelectronic Corporation
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CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃. (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistancem
VGS(th)
Gate Threshold Voltage
2
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-4.6A
-
-
55
mΩ
VGS=-4.5V, ID=-3.6A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-2.5
V
gfs
Forward Transconductance
VDS=-5V, ID=-4.6A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25 C) VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage Current
VGS=±20V
-
-
±100
nA
2
Qg
Total Gate Charge
ID=-4.6A
-
11.7
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
2.9
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
9
-
ns
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
37
-
ns
tf
Fall Time
RD=15Ω
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
582
-
pF
Coss
Output Capacitance
VDS=-15V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
86
-
pF
Min.
Typ.
Max. Units
-
-0.84
-1.2
2
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-1.7A, VGS=0V
V
Notes:
1.Surface mounted on FR4 Board , t≦2%
2.Pulse width ≦300us , duty cycle ≦2%.
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL
CHARACTERISTICS
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE DIMENSION
8-PIN SOP (S08)
PIN 1 ID
θ
θ
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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CMT4953G
P-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
2007/03/01 Rev1.0
Champion Microelectronic Corporation
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