AP4435GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
D
BVDSS
RDS(ON)
ID
-30V
21mΩ
-11A
G
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
D
D
D
S
S
S
G
PMPAK ® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
+25
V
3
-11
A
3
-8.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-40
A
PD@TA=25℃
Total Power Dissipation
3.57
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Value
Unit
Rthj-c
Symbol
Maximum Thermal Resistance, Junction-case
6
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient 3
35
℃/W
Parameter
Data and specifications subject to change without notice
1
201009214
AP4435GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-10A
-
17
21
mΩ
VGS=-4.5V, ID=-6A
-
26
36
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.95
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-6A
-
15
24
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
39
-
ns
tf
Fall Time
RD=15Ω
-
21
-
ns
Ciss
Input Capacitance
VGS=0V
-
1260 2000
pF
Coss
Output Capacitance
VDS=-15V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.3
10.6
Ω
Min.
Typ.
Max. Units
IS=-2.9A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
trr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4435GYT-HF
50
50
o
T A =25 C
40
-ID , Drain Current (A)
-ID , Drain Current (A)
40
-10V
-7.0V
-5.0V
-4.5V
T A = 150 o C
-10V
-7.0V
-5.0V
-4.5V
30
V G = -3.0V
20
10
30
V G = -3.0V
20
10
0
0
0
1
2
3
4
5
6
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
1.6
I D =-10A
V G =-10V
I D = -6 A
T A =25 ℃
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
28
24
1.2
1.0
20
0.8
16
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
100
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
8
1.2
Normalized -VGS(th) (V)
-IS(A)
50
o
Fig 3. On-Resistance v.s. Gate Voltage
6
T j =150 o C
0
T j =25 o C
4
1.0
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4435GYT-HF
f=1.0MHz
1600
10
I D = -6 A
C iss
1200
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -15 V
8
6
800
4
400
C oss
C rss
2
0
0
0
10
20
30
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
10
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
PDM
0.05
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthia=85 ℃/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4