Previous Datasheet Index Next Data Sheet PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V G @VGE = 15V, I C = 31A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 50 31 240 100 ±20 15 160 65 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — — — — 0.50 — 2.0 (0.07) 0.77 — 80 — Units °C/W g (oz) Revision 0 C-15 To Order Previous Datasheet Index Next Data Sheet IRGBC40S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.75 — V/°C VGE = 0V, I C = 1.0mA — 1.6 1.8 IC = 31A V GE = 15V — 2.2 — V IC = 60A See Fig. 2, 5 — 1.7 — IC = 31A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -9.3 — mV/°C VCE = VGE, IC = 250µA 12 21 — S VCE = 100V, I C = 31A — — 250 µA VGE = 0V, V CE = 600V — — 1000 VGE = 0V, V CE = 600V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 62 90 IC = 31A 10 15 nC VCC = 400V See Fig. 8 27 40 VGE = 15V 28 — TJ = 25°C 50 — ns IC = 31A, V CC = 480V 1100 1500 VGE = 15V, R G = 10Ω 620 1100 Energy losses include "tail" 1.0 — 12 — mJ See Fig. 9, 10, 11, 14 13 20 29 — TJ = 150°C, 53 — ns IC = 31A, V CC = 480V 1600 — VGE = 15V, R G = 10Ω 1200 — Energy losses include "tail" 22 — mJ See Fig. 10, 14 7.5 — nH Measured 5mm from package 1600 — VGE = 0V 140 — pF VCC = 30V See Fig. 7 20 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-16 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGBC40S 60 LO A D C U R R E N T (A ) Fo r bo th: Tria ngu lar w av e: D uty c yc le: 50% T J = 125° C T s in k = 90°C G ate d riv e as s pec ified P o w e r D issip a tion = 2 8 W 40 C lam p voltage: 80% of ra ted S qu are w ave : 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 IC , C ollector-to-E mitter C urrent (A ) I C , Collector-to-E m itter C urrent (A) 1000 TJ = 25 °C 100 TJ = 15 0°C 10 TJ = 25 °C TJ = 1 50 °C 100 10 V G E = 15 V 20 µs P UL S E W ID TH 1 0.1 1 V C C = 1 00 V 5 µ s P UL S E W IDTH 1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-17 To Order 20 Previous Datasheet Index Next Data Sheet IRGBC40S 3.0 V G E = 15 V LIMITED BY PACKAGE 60 V CE , Collector-to-E m itter V oltage (V) M a xim u m D C C o llec to r C urren t (A ) 70 50 40 30 20 10 VG E = 1 5 V 80 µs P UL S E W ID TH I C = 62 A 2.5 2.0 I C = 31 A 1.5 I C = 1 6A 1.0 0 25 50 75 100 1 25 -60 150 T C , C as e T em pe ra ture (°C ) -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z th JC ) 1 D = 0 .5 0 0.2 0 0.1 0.1 0 PD M 0 .05 0.0 2 t t2 N o te s: 1 . D u ty fa c to r D = t 0.0 1 0.01 0.00001 1 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) 1 / t 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-18 To Order 10 Previous Datasheet Index Next Data Sheet IRGBC40S 3 0 00 20 V G E , G ate-to-E mitter V oltage (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc C , C a pac ita nc e (pF ) Cies 2 0 00 Coes 1 0 00 Cres V C E = 40 0 V I C = 3 1A 16 12 8 4 0 0 1 10 10 0 0 10 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1 4 .4 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 = 4 80 V = 15 V = 25 °C = 3 1A To ta l S w itc hing Lo sse s (m J) To ta l S w itch in g Losses (m J) 1 4 .6 20 Q g , Total G ate C harge (nC ) 1 4 .2 1 4 .0 1 3 .8 1 3 .6 R G = 10 Ω V GE = 15 V V CC = 4 80 V I C = 62 A I C = 31A I C = 1 6A 10 1 3 .4 1 3 .2 1 0 10 20 30 40 50 60 -60 R G , G ate R es istance (Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-19 To Order Previous Datasheet Index Next Data Sheet IRGBC40S RG TC VCC VGE 40 1000 = 10 Ω = 1 50°C = 48 0V = 1 5V I C , C o lle c to r-to -E m itte r C u rre n t (A ) T o ta l S w itc hin g L o s s e s (m J ) 50 30 20 10 VGGE E= 20 V T J = 125 °C 100 S A FE O P E R A TING A R E A 10 1 0 0 10 20 30 40 50 60 1 70 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB C-20 To Order Section D - page D-12 1000