Dallas DS5000-8-16 Soft microcontroller module Datasheet

DS5000(T)
DS5000(T)
Soft Microcontroller Module
FEATURES
PIN ASSIGNMENT
• 8–bit 8051 compatible Microcontroller adapts to task–
at–hand:
– 8 or 32K bytes of nonvolatile RAM for program
and/or data memory storage
– Initial downloading of software in end system
via on–chip serial port
– Capable of modifying its own program and/or
data memory in end use
• Crashproof operation:
– Maintains all nonvolatile resources for 10 years
in the absence of VCC
– Power–fail reset
– Early warning power–fail interrupt
– Watchdog timer
• Software Security Feature:
– Executes encrypted software to prevent unauthorized disclosure
• On–chip, full–duplex serial I/O ports
• Two on–chip timer/event counters
P1.0
1
40
VCC
P1.1
2
39
P0.0 AD0
P1.2
3
38
P0.1 AD1
P1.3
4
37
P0.2 AD2
P1.4
5
36
P0.3 AD3
P1.5
6
35
P0.4 AD4
P1.6
7
P0.5 AD5
P1.7
8
9
34
33
32
P0.7 AD7
RST
P0.6 AD6
RXD P3.0
10
31
EA
TXD P3.1
11
30
ALE
INT0 P3.2
12
29
PSEN
INT1 P3.3
13
28
P2.7 A15
T0 P3.4
14
27
P2.6 A14
T1 P3.5
26
P2.5 A13
WR P3.6
15
16
25
P2.4 A12
RD P3.7
17
24
P2.3 A11
XTAL2
18
23
P2.2 A10
XTAL1
19
22
P2.1 A9
GND
20
21
P2.0 A8
40–PIN ENCAPSULATED PACKAGE
• 32 parallel I/O lines
• Compatible with
industry standard 8051 instruction
set and pinout
• Optional
Permanently Powered Real–Time Clock
(DS5000T)
DESCRIPTION
The DS5000(T) Soft Microcontroller Module is a fully
8051 compatible 8–bit CMOS microcontroller that offers
“softness” in all aspects of its application. This is accomplished through the comprehensive use of nonvolatile technology to preserve all information in the absence of system VCC. The internal program/data
memory space is implemented using either 8K or
32K bytes of nonvolatile CMOS SRAM. Furthermore,
internal data registers and key configuration registers
are also nonvolatile. An optional real time clock gives
permanently powered timekeeping. The clock keeps
time to a hundredth of a second using an on–board
crystal.
021998 1/19
DS5000(T)
ORDERING INFORMATION
PART NUMBER
RAM SIZE
MAX CRYSTAL SPEED
TIMEKEEPING?
DS5000–8–16
8K bytes
16 MHz
No
DS5000–32–16
32K bytes
16 MHz
No
DS5000–8–16
8K bytes
16 MHz
Yes
DS5000T–32–16
32K bytes
16 MHz
Yes
Operating information is contained in the User’s Guide section of the Secure Microcontroller Data Book. This data
sheet provides ordering information, pinout, and electrical specification.
DS5000(T) BLOCK DIAGRAM Figure 1
DS5000(T)
VCC
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VCCO
P0.0–0.7
P2.0–2.7
P3.0–3.7
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BYTE–WIDE
ADDRESS BUS
P1.0–1.7
BYTE–WIDE
DATA BUS
DS5000FP
CE1
RST
R/W
ALE
PSEN
EA
XTAL1
XTAL2
CE2
GND
+3V
021998 2/19
8K OR 32K
SRAM
(DS5000T)
REAL TIME
CLOCK
DS5000(T)
PIN DESCRIPTION
PIN NUMBER
1–8
DESCRIPTION
1
P1.0 – P1.7. General purpose I/O Port 1.
9
RST – Active high reset input. A logic 1 applied to this pin will activate a reset state. This pin
is pulled down internally so this pin can be left unconnected if not used.
10
P3.0 RXD. General purpose I/O port pin 3.0. Also serves as the receive signal for the on
board UART. This pin should not be connected directly to a PC COM port.
11
P3.1 TXD. General purpose I/O port pin 3.1. Also serves as the transmit signal for the on
board UART. This pin should not be connected directly to a PC COM port.
12
P3.2 INT0. General purpose I/O port pin 3.2. Also serves as the active low External
Interrupt 0.
13
P3.3 INT1. General purpose I/O port pin 3.3. Also serves as the active low External
Interrupt 1.
14
P3.4 T0. General purpose I/O port pin 3.4. Also serves as the Timer 0 input.
15
P3.5 T1. General purpose I/O port pin 3.5. Also serves as the Timer 1 input.
16
P3.6 WR. General purpose I/O port pin. Also serves as the write strobe for Expanded
bus operation.
17
P3.7 RD. General purpose I/O port pin. Also serves as the read strobe for Expanded bus
operation.
18, 19
XTAL2, XTAL1. Used to connect an external crystal to the internal oscillator. XTAL1 is the
input to an inverting amplifier and XTAL2 is the output.
20
GND. Logic ground.
21–28
P2.0–P2.7. General purpose I/O Port 2. Also serves as the MSB of the Expanded Address
bus.
29
PSEN – Program Store Enable. This active low signal is used to enable an external program
memory when using the Expanded bus. It is normally an output and should be unconnected
if not used. PSEN also is used to invoke the Bootstrap Loader. At this time, PSEN will be
pulled down externally. This should only be done once the DS5000(T) is already in a reset
state. The device that pulls down should be open drain since it must not interfere with PSEN
under normal operation.
30
ALE – Address Latch Enable. Used to de–multiplex the multiplexed Expanded Address/Data
bus on Port 0. This pin is normally connected to the clock input on a ’373 type transparent
latch. When using a parallel programmer, this pin also assumes the PROG function for programming pulses.
31
EA – External Access. This pin forces the DS5000(T) to behave like an 8031. No internal
memory (or clock) will be available when this pin is at a logic low. Since this pin is pulled down
internally, it should be connected to +5V to use NV RAM. In a parallel programmer, this pin
also serves as VPP for super voltage pulses.
021998 3/19
DS5000(T)
PIN NUMBER
32–39
40
DESCRIPTION
P0.7–P0.0. General purpose I/O Port 0. This port is open–drain and can not drive a
logic 1. It requires external pull–ups. Port 0 is also the multiplexed Expanded Address/Data
bus. When used in this mode, it does not require pull–ups.
VCC – +5 volts.
INSTRUCTION SET
The DS5000(T) executes an instruction set which is object code compatible with the industry standard 8051
microcontroller. As a result, software development
packages which have been written for the 8051 are
compatible with the DS5000(T), including cross–assemblers, high–level language compilers, and debugging tools.
A complete description for the DS5000(T) instruction
set is available in the User’s Guide section of the Secure
Microcontroller Data Book.
MEMORY ORGANIZATION
Figure 2 illustrates the address spaces which are accessed by the DS5000(T). As illustrated in the figure,
separate address spaces exist for program and data
021998 4/19
memory. Since the basic addressing capability of the
machine is 16 bits, a maximum of 64K bytes of program
memory and 64K bytes of data memory can be accessed by the DS5000(T) CPU. The 8K or 32K byte
RAM area inside of the DS5000(T) can be used to contain both program and data memory.
The Real time Clock (RTC) in the DS5000T is reached
in the memory map by setting a SFR bit. The MCON.2
bit (ECE2) is used to select an alternate data memory
map. While ECE2=1, all MOVXs will be routed to this
alternate memory map. The real time clock is a serial
device that resides in this area. A full description of the
RTC access and example software is given in the User’s
Guide section of the Secure Microcontroller Data Book.
If the ECE2 bit is set on a DS5000 without a timekeeper,
the MOVXs will simply go to a nonexistent memory.
Software execution would not be affected otherwise.
DS5000(T)
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DS5000(T) LOGICAL ADDRESS SPACES Figure 2
127
64K –
32K –
32K –
8K –
8K –
NV RAM
PROGRAM
MEMORY
255
128
0
0
DATA
REGISTERS
SPECIAL
FUNCTION
REGISTERS
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64K –
PROGRAM
MEMORY
RANGE
ADDR.
NV RAM
DATA
MEMORY
PARTITION
ADDR.
0
DATA
MEMORY
INTERNAL REGISTERS
LEGEND:
= ON–CHIP REGISTERS
ÏÏ
ÏÏ
ÎÎ
ÎÎ
= ACCESSED VIA EXPANDED BUS
= NV RAM MEMORY
PROGRAM LOADING
The Program Load Modes allow initialization of the
NV RAM Program/Data Memory. This initialization may
be performed in one of two ways:
1. Serial Program Loading which is capable of performing Bootstrap Loading of the DS5000(T). This
feature allows the loading of the application program
to be delayed until the DS5000(T) is installed in the
end system. Dallas Semiconductor strongly recommends the use of serial program loading because of
its versatility and ease of use.
The DS5000(T) is placed in its Program Load configuration by simultaneously applying a logic 1 to the RST pin
and forcing the PSEN line to a logic 0 level. Immediately
following this action, the DS5000(T) will look for a parallel Program Load pulse, or a serial ASCII carriage return
(0DH) character received at 9600, 2400, 1200, or 300
bps over the serial port.
The hardware configurations used to select these
modes of operation are illustrated in Figure 3.
2. Parallel Program Load cycles which perform the initial loading from parallel address/data information
presented on the I/O port pins. This mode is timing–
set compatible with the 8751H microcontroller programming mode.
021998 5/19
DS5000(T)
PROGRAM LOADING CONFIGURATIONS Figure 3
VCC
GND
VCC
DS5000
PROGRAM
ADDRESS
A7–A0
P1.7–
P1.0
P0.7–
P0.0
A11–A8
P2.3–
P2.0
P3.7–
P3.4
D7–D0
PROGRAM
DATA IN/VERIFY
DATA OUT
A15–A12 PROGRAM
ADDRESS
EA/VPP
P1.7–
P1.0
P0.7–
P0.0
P2.5–
P2.0
P3.7–
P3.2
P2.6
ALE/PROG
PROGRAM
CONTROL
GND
DS5000
TXD
P2.7
RXD
DRIVE/ RS232C
RCV
P2.7
P2.6
R<2K
P2.5
XTAL1
R<2K
RST
PSEN
XTAL1
11.059 MHz
XTAL2
SERIAL BOOTSTRAP LOADER
The Serial Program Load Mode is the easiest, fastest,
most reliable, and most complete method of initially
loading application software into the DS5000(T) nonvolatile RAM. Communication can be performed over a
standard asynchronous serial communications port. A
typical application would use a simple RS232C serial interface to program the DS5000(T) as a final production
procedure. The hardware configuration which is required for the Serial Program Load mode is illustrated in
Figure 3. Port pins 2.7 and 2.6 must be either open or
pulled high to avoid placing the DS5000(T) in a parallel
load cycle. Although an 11.0592 MHz crystal is shown
in Figure 3, a variety of crystal frequencies and loader
baud rates are supported, shown in Table 2. The serial
loader is designed to operate across a three–wire interface from a standard UART. The receive, transmit, and
ground wires are all that are necessary to establish
communication with the DS5000(T).
The Serial Bootstrap Loader implements an easy–to–
use command line interface which allows an application
021998 6/19
PSEN
XTAL2
PARALLEL
LOADING
Table 1 summarizes the selection of the available Parallel Program Load cycles. The timing associated with
these cycles is illustrated in the electrical specs.
RST
SERIAL
LOADING
program in an Intel hex representation to be loaded into
and read back from the device. Intel hex is the typical
format which existing 8051 cross–assemblers output.
The serial loader responds to single character commands which are summarized below:
COMMAND
C
D
F
K
L
R
T
U
V
W
Z
P
G
FUNCTION
Return CRC–16 checksum of embedded RAM
Dump Intel Hex File
Fill embedded RAM block with
constant
Load 40–bit Encryption Key
Load Intel Hex File
Read MCON register
Trace (Echo) incoming Intel Hex
data
Clear Security Lock
Verify Embedded RAM with incoming Intel Hex
Write MCON register
Set Security Lock
Put a value to a port
Get a value from a port
DS5000(T)
PARALLEL PROGRAM LOAD CYCLES Table 1
MODE
RST
PSEN
PROG
EA
P2.7
P2.6
P2.5
Program
1
0
0
VPP
1
0
X
Security Set
1
0
0
VPP
1
1
X
Verify
1
X
X
1
0
0
X
Prog Expanded
1
0
0
VPP
0
1
0
Verify Expanded
1
0
1
1
0
1
0
Prog MCON or Key registers
1
0
0
VPP
0
1
1
Verify MCON registers
1
0
1
1
0
1
1
The Parallel Program Cycle is used to load a byte of
data into a register or memory location within the
DS5000(T). The Verify Cycle is used to read this byte
back for comparison with the originally loaded value to
verify proper load ing. The Security Set Cycle may be
used to enable and the Software Security feature of the
DS5000(T). One may also enter bytes for the MCON
register or for the five encryption registers using the Program MCON cycle. When using this cycle, the absolute
register address must be presented at Ports 1 and 2 as
in the normal program cycle (Port 2 should be 00H). The
MCON contents can likewise be verified using the Verify
MCON cycle.
When the DS5000(T) first detects a Parallel Program
Strobe pulse or a Security Set Strobe pulse while in the
Program Load Mode following a Power–On Reset, the
internal hardware of the DS5000(T) is initialized so that
an existing 4K byte program can be programmed into a
DS5000(T) with little or no modification. This initialization automatically sets the Range Address for 8K bytes
and maps the lowest 4K byte bank of Embedded RAM
as program memory. The next 4K bytes of Embedded
RAM are mapped as Data Memory.
In order to program more than 4K bytes of program
code, the Program/Verify Expanded cycles can be
used. Up to 32K bytes of program code can be entered
and verified. Note that the expanded 32K byte Program/
Verify cycles take much longer than the normal 4K byte
Program/Verify cycles.
A typical parallel loading session would follow this procedure. First, set the contents of the MCON register
with the correct range and partition only if using expanded programming cycles. Next, the encryption registers
can be loaded to enable encryption of the program/data
memory (not required). Then, program the DS5000(T)
using either normal or expanded program cycles and
check the memory contents using Verify cycles. The
last operation would be to turn on the security lock feature by either a Security Set cycle or by explicitly writing
to the MCON register and setting MCON.0 to a 1.
021998 7/19
DS5000(T)
SERIAL LOADER BAUD RATES FOR DIFFERENT CRYSTAL FREQUENCIES Table 2
BAUD RATE
CRYSTAL FREQ (MHz)
300
14.7456
1200
2400
9600
19200
Y
Y
Y
Y
Y
11.0592
Y
Y
Y
Y
9.21600
Y
Y
Y
Y
7.37280
Y
Y
Y
Y
5.52960
Y
Y
Y
Y
1.84320
Y
Y
Y
Y
ADDITIONAL INFORMATION
A complete description for all operational aspects of the
DS5000(T), is provided in the User’s Guide section of
the Secure Microcontroller Data Book.
DEVELOPMENT SUPPORT
Dallas Semiconductor offers a kit package for developing and testing user code. The DS5000TK Evaluation
021998 8/19
57600
Y
Kit allows the user to download Intel hex formatted code
directly to the DS5000(T) from a PC–XT/AT or compatible computer. The kit consists of a DS5000T–32, an interface pod, demo software, and an RS232 connector
that attaches to the COM1 or COM2 serial port of a PC.
See the Development Tools section of the Secure
Microcontroller Data Book for further details.
DS5000(T)
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.3V to +7.0V
0°C to 70°C
–40°C to +70°C
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
DC CHARACTERISTICS
PARAMETER
(tA = 0°C to70°C; VCC = 5V + 5%)
SYMBOL
MIN
Input Low Voltage
VIL
Input High Voltage
Input High Voltage RST, XTAL1
Output Low Voltage @ IOL=1.6 mA
(Ports 1, 2, 3)
VOL1
Output Low Voltage @ IOL=3.2 mA
(Ports 0, ALE, PSEN)
VOL2
Output High Voltage @ IOH=–80 µA
(Ports 1, 2, 3)
VOH1
2.4
Output High Voltage @ IOH=–400 µA
(Ports 0, ALE, PSEN)
VOH2
2.4
TYP
MAX
UNITS
NOTES
–0.3
0.8
V
1
VIH1
2.0
VCC +0.3
V
1
VIH2
3.5
VCC +0.3
V
1
0.15
0.45
V
0.15
0.45
V
1
4.8
V
1
4.8
V
1
Input Low Current VIN = 0.45V (Ports
1, 2, 3)
IIL
–50
µA
Transition Current; 1 to 0
VIN = 2.0V (Ports 1, 2, 3)
ITL
–500
µA
Input Leakage Current
0.45 < VIN < VCC (Port 0)
IL
+10
µA
125
KΩ
80
µA
4
RST, EA Pulldown Resistor
RRE
Stop Mode Current
ISM
40
Power–Fail Warning Voltage
VPFW
4.15
4.6
4.75
V
1
Minimum Operating Voltage
4.5
4.65
V
1
13
V
1
VCCmin
4.05
Programming Supply Voltage
(Parallel Program Mode)
VPP
12.5
Program Supply Current
IPP
15
20
mA
Operating Current DS5000–8K@8 MHz
DS5000–32K @ 12 MHz
DS5000T–32–16 @ 16 MHz
ICC
25.2
35.7
45.6
43
48
54
mA
2
Idle Mode Current @ 12 MHz
ICC
4.5
6.2
mA
3
021998 9/19
DS5000(T)
AC CHARACTERISTICS
EXPANDED BUS MODE TIMING SPECIFICATIONS
SYMBOL
(tA = 0°C to70°C; VCC = 5V + 5%)
#
PARAMETER
MIN
MAX
UNITS
1
Oscillator Frequency
2
ALE Pulse Width
1/tCLK
1.0
16
MHz
tALPW
2tCLK –40
ns
3
4
Address Valid to ALE Low
tAVALL
tCLK –40
ns
Address Hold After ALE Low
tAVAAV
tCLK –35
ns
5
ALE Low to Valid Instr. In
6
ALE Low to PSEN Low
7
PSEN Pulse Width
8
PSEN Low to Valid Instr. In
9
Input Instr. Hold after PSEN Going High
10
Input Instr. Float after PSEN Going High
tPSIX
11
Address Hold after PSEN Going High
tPSAV
12
Address Valid to Valid Instr. In @12 MHz
@16 MHz
tAVVI
13
PSEN Low to Address Float
tPSLAZ
0
ns
14
RD Pulse Width
tRDPW
6tCLK –100
ns
15
WR Pulse Width
tWRPW
6tCLK –100
16
RD Low to Valid Data In
17
Data Hold after RD High
tRDHDV
18
Data Float after RD High
tRDHDZ
2tCLK –70
ns
19
ALE Low to Valid Data In
@12 MHz
@16 MHz
tALLVD
8CLK –150
8tCLK –90
ns
ns
20
Valid Addr. to Valid Data In
@12 MHz
@16 MHz
tAVDV
9tCLK –165
9tCLK –105
ns
ns
21
ALE Low to RD or WR Low
3tCLK +50
ns
22
23
24
Data Valid to WR High
@12 MHz
@16 MHz
@12 MHz
@16 MHz
@12 MHz
@16 MHz
tALLVI
4tCLK –150
4tCLK –90
tALLPSL
tCLK –25
tPSPW
3tCLK –35
tPSLVI
tPSIV
ns
ns
3tCLK –150
3tCLK –90
0
ns
ns
ns
tCLK –20
tCLK –8
ns
ns
5tCLK –150
5tCLK –90
tRDLDV
ns
ns
ns
ns
ns
5tCLK –165
5tCLK –105
0
ns
ns
ns
tALLRDL
3tCLK –50
Address Valid to RD or WR Low
tAVRDL
4tCLK –130
ns
Data Valid to WR Going Low
tDVWRL
tCLK –60
ns
tDVWRH
7tCLK –150
7tCLK –90
ns
@12 MHz
@16 MHz
25
Data Valid after WR High
tWRHDV
26
RD Low to Address Float
tRDLAZ
27
RD or WR High to ALE High
021998 10/19
tRDHALH
ns
tCLK –50
tCLK –40
ns
0
ns
tCLK +50
ns
DS5000(T)
EXPANDED PROGRAM MEMORY READ CYCLE
2
ALE
6
7
5
8
11
PSEN
13
PORT 0
10
9
3
4
A7–A0
INSTR IN
A7–A0
12
PORT 2
A15–A8
A15–A8
EXPANDED DATA MEMORY READ CYCLE
27
ALE
PSEN
19
21
14
RD
16
18
3
PORT 0
26
4
A7–A0
(Rn OR DPL)
17
DATA IN
A7–A0
(PCL)
INSTR
IN
22
20
PORT 2
P2.7–P2.0 OR A15–A8 FROM DPH
A15–A8 FROM PCH
021998 11/19
DS5000(T)
EXPANDED DATA MEMORY WRITE CYCLE
27
ALE
PSEN
21
15
WR
23
PORT 0
25
4
3
24
A7–A0
(Rn OR DPL)
A7–A0
(PCL)
DATA OUT
22
PORT 2
P2.7–P2.0 OR A15–A8 FROM PDH
A15–A8 FROM PCH
EXTERNAL CLOCK TIMING
28
29
30
31
1
021998 12/19
INSTR
IN
DS5000(T)
AC CHARACTERISTICS (cont’d)
EXTERNAL CLOCK DRIVE
#
PARAMETER
28
External Clock High Time
29
(tA = 0°C to70°C; VCC = 5V + 5%)
SYMBOL
MIN
@12 MHz
@16 MHz
tCLKHPW
20
15
ns
ns
External Clock Low Time
@12 MHz
@16 MHz
tCLKLPW
20
15
ns
ns
30
External Clock Rise Time
@12 MHz
@16 MHz
tCLKR
20
15
ns
ns
31
External Clock Fall Time
@12 MHz
@16 MHz
tCLKF
20
15
ns
ns
AC CHARACTERISTICS (cont’d)
SERIAL PORT TIMING – MODE 0
#
PARAMETER
35
MAX
UNITS
(tA = 0°C to70°C; VCC = 5V + 5%)
SYMBOL
MIN
MAX
UNITS
Serial Port Cycle Time
tSPCLK
12tCLK
µs
36
Output Data Setup to Rising Clock Edge
tDOCH
10tCLK –133
ns
37
Output Data Hold after Rising Clock Edge
tCHDO
2tCLK –117
ns
38
Clock Rising Edge to Input Data Valid
tCHDV
39
Input Data Hold after Rising Clock Edge
tCHDIV
10tCLK –133
ns
0
ns
SERIAL PORT TIMING – MODE 0
INSTRUCTION
0
1
2
3
4
5
6
7
8
ALE
35
CLOCK
36
37
DATA OUT
0
1
2
3
4
5
6
7
SET TI
WRITE TO
SBUF REGISTER
39
38
INPUT DATA
SET RI
VALID
VALID
VALID
VALID
VALID
VALID
VALID
CLEAR RI
021998 13/19
DS5000(T)
AC CHARACTERISTICS (cont’d)
POWER CYCLING TIMING
(tA = 0°C to70°C; VCC = 5V + 5%)
#
PARAMETER
SYMBOL
MIN
tF
40
MAX
32
Slew Rate from VCCmin to 3.3V
33
Crystal Start up Time
tCSU
(note 5)
34
Power–On Reset Delay
tPOR
21504
UNITS
µs
tCLK
POWER CYCLE TIMING
VCC
VPFW
VCCMIN
VLI
32
INTERRUPT
SERVICE
ROUTINE
33
CLOCK
OSC
34
INTERNAL
RESET
LITHIUM
CURRENT
021998 14/19
DS5000(T)
AC CHARACTERISTICS (cont’d)
PARALLEL PROGRAM LOAD TIMING
#
PARAMETER
40
(tA = 0°C to70°C; VCC = 5V + 5%)
SYMBOL
MIN
MAX
UNITS
Oscillator Frequency
1/tCLK
1.0
12.0
MHz
41
Address Setup to PROG Low
tAVPRL
0
42
Address Hold after PROG High
tPRHAV
0
43
Data Setup to PROG Low
tDVPRL
0
44
Data Hold after PROG High
tPRHDV
0
45
P2.7, 2.6, 2.5 Setup to VPP
tP27HVP
0
46
VPP Setup to PROG Low
tVPHPRL
0
47
VPP Hold after PROG Low
tPRHVPL
0
48
PROG Width Low
tPRW
2400
49
Data Output from Address Valid
tAVDV
48
1800*
tCLK
50
Data Output from P2.7 Low
tDVP27L
48
1800*
tCLK
51
Data Float after P2.7 High
tP27HDZ
0
48
1800*
tCLK
52
Delay to Reset/PSEN Active after
Power–On
tPORPV
21504
tCLK
53
Reset/PSEN Active (or Verify Inactive) to
VPP High
tRAVPH
1200
tCLK
54
VPP Inactive (Between Program Cycles)
tVPPPC
1200
tCLK
55
Verify Active Time
tVFT
48
2400*
tCLK
tCLK
* Second set of numbers refers to expanded memory programming up to 32K bytes.
021998 15/19
DS5000(T)
PARALLEL PROGRAM LOAD TIMING
P2.3–P2.0
P1.7–P1.0
ADDRESS
41
ADDRESS
ADDRESS
42
49
DATA
PORT
DATA
DATA
44
43
ALE/PROG
51
47
46
48
54
VPP
EA/VPP
VIH
45
50
53
P2.7, P2.6, P2.5
ACTIVE
55
+5V
VCC
52
53
RST
PSEN
CAPACITANCE
PARAMETER
(test frequency = 1 MHz; tA = 25°C)
SYMBOL
MIN
TYP
MAX
UNITS
Output Capacitance
CO
10
pF
Input Capacitance
CI
10
pF
021998 16/19
NOTES
DS5000(T)
DS5000(T) TYPICAL ICC VS. FREQUENCY
45.0
16 MHz
40.0
12 MHz
35.0
30.0
8 MHz
Icc CURRENT (mA)
25.0
NORMAL
OPERATION
20.0
15.0
10.0
IDLE MODE
OPERATION
5.0
0
0.0
5.0
10.0
15.0
FREQUENCY OF OPERATION (MHz)
(VCC=+5V, tA=25°C)
Normal operation is measured using:
1)
2)
3)
4)
External crystals on XTAL1 and 2
All port pins disconnected
RST=0 volts and EA=VCC
Part performing endless loop writing to internal memory.
Idle mode operation is measured using:
1)
2)
3)
4)
External clock source at XTAL1; XTAL2 floating
All port pins disconnected
RST=0 volts and EA=VCC
Part set in IDLE mode by software.
021998 17/19
DS5000(T)
NOTES:
1. All voltages are referenced to ground.
2. Maximum operating ICC is measured with all output pins disconnected; XTAL1 driven with tCLKR, tCLKF=10 ns,
VIL = 0.5V; XTAL2 disconnected; EA = RST = PORT0 = VCC.
3. Idle mode ICC is measured with all output pins disconnected; XTAL1 driven with tCLKR, tCLKF = 10 ns, VIL = 0.5V;
XTAL2 disconnected; EA = PORT0 = VCC, RST = VSS.
4. Stop mode ICC is measured with all output pins disconnected; EA = PORT0 = VCC; XTAL2 not connected;
RST = VSS.
5. Crystal start–up time is the time required to get the mass of the crystal into vibrational motion from the time that
power is first applied to the circuit until the first clock pulse is produced by the on–chip oscillator. The user should
check with the crystal vendor for the worst case spec on this time.
PACKAGE DRAWING
INCHES
A
DIM
MIN
MAX
A IN.
2.080
2.100
B IN.
0.680
0.700
C IN.
0.290
0.325
D IN.
0.090
0.110
E IN.
0.030
0.060
F IN.
0.145
0.185
G IN.
0.016
0.020
H IN.
0.590
0.610
I IN.
0.009
0.015
1
E
C
G
F
1.900
B
I
H
021998 18/19
D
DS5000(T)
DATA SHEET REVISION SUMMARY
The following represent the key differences between the dates 07/20/95 to 07/24/96 of the DS5000(T) data sheet.
Please review this summary carefully.
1. Correct Figure 3 to show RST active high.
2. Add Data Sheet Revision Summary.
021998 19/19
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