SRAM MT5C6405 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY 24-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-86859 • MIL-STD-883 A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ OE\ Vss FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A4 A3 A2 A1 A0 NC DQ4 DQ3 DQ2 DQ1 WE\ A5 NC NC Vcc NC 28-Pin LCC (EC) 3 2 1 28 27 OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access -12 -15 -20 -25 -35 -45* -55* -70* • Package(s) Ceramic DIP (300 mil) Ceramic LCC C EC DQ1 WE\ NC Vss OE\ GENERAL DESCRIPTION No. 106 No. 204 The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. L *Electrical characteristics identical to those provided for the 35ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C6405 Rev. 2.1 06/05 NC A4 A3 A2 A1 A0 DQ4 DQ3 DQ2 13 14 15 16 17 • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power 26 25 24 23 22 21 20 19 18 A6 4 A7 5 A8 6 A9 7 A10 8 A11 9 A12 10 A13 11 CE\ 12 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C6405 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC I/O CONTROL D ROW DECODER A A A A A A A A A GND 1,048,576-BIT MEMORY ARRAY Q CE\ (LSB) OE\ WE\ POWER DOWN COLUMN DECODER (LSB) A A A A A A A A A A TRUTH TABLE MODE STANDBY READ READ WRITE MT5C6405 Rev. 2.1 06/05 OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C6405 Austin Semiconductor, Inc. *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss....-0.5V to +7.0V1 Storage Temperature…...................................-65oC to +150oC Power Dissipation.................................................................1W Max Junction Temperature..................................................+175°C Lead Temperature (soldering 10 seconds)........................+260oC Short Circuit Output Current...........................................20mA 1 All voltage referenced to Vss. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage CONDITIONS SYM MIN MAX VIH 2.2 Vcc+0.5V V 1 VIL -0.5 0.8 V 1, 2 0V < VIN < VCC ILI -10 10 µA Outputs Disabled 0V < VOUT < VCC ILO -10 10 µA Output High Voltage IOH = -4.0mA VOH 2.4 Output Low Voltage IOL = 8.0mA VOL Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current UNITS NOTES 0.4 V 1 V 1 CONDITIONS SYM -12 -15 MAX -20 -25 -35 Power Supply Current: Operating CE\ < VIL; VCC = MAX Output Open Icc 140 125 110 100 90 mA Power Supply Current: Standby CE\ > VIH; VCC = MAX f = 0 Hz ISBT1 50 45 40 35 30 mA CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz ISBC2 25 25 25 25 25 mA PARAMETER UNITS NOTES 3 CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance MT5C6405 Rev. 2.1 06/05 CONDITIONS o TA = 25 C, f = 1MHz Vcc = 5V SYM MAX UNITS NOTES CI 8 pF 4 CO 10 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C6405 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C6405 Rev. 2.1 06/05 -12 -15 -20 -25 -35 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD tAOE tLZOE tHZOE 12 tWC tCW tAW tAS tAH tWP tDS tDH 12 10 10 0 0 10 7 0 2 0 tLZWE tHZWE 15 12 12 2 2 20 15 15 2 2 7 0 2 2 8 0 12 6 0 6 7 20 15 15 0 0 15 10 0 2 0 8 15 0 0 35 15 8 10 25 20 20 0 0 20 12 0 2 0 ns ns ns ns ns ns ns ns ns ns 15 25 10 8 15 2 2 0 0 ns ns ns ns ns ns ns ns ns ns ns 35 35 12 20 8 7 15 12 12 0 0 12 8 0 2 0 2 2 0 0 35 25 25 10 15 7 6 25 20 20 10 35 25 25 0 0 25 15 0 2 0 7 6, 7 6 7 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C6405 Austin Semiconductor, Inc. +5V AC TEST CONDITIONS +5V 480 Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 480 Q Q 30pF 255 5 pF 255 Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. CE2 timing is the same as CE1\ timing. The waveform is inverted. NOTES 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, allowing for actual tester RC time constant. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION CONDITIONS VCC for Retention Data SYM MIN MAX UNITS NOTES VDR 2 --- V 1 mA --- ns 4 ns 4, 11 CE\ > (VCC - 0.2V) Data Retention Current VIN > (VCC - 0.2V) or < 0.2V VCC = 2V Chip Deselect to Data Retention Time Operation Recovery Time ICCDR tCDR 0 tR tRC LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V t CDR CE\ VIH VIL 1234 123456789 123 123456789 123 1234 123456789 123 1234 123456789 123 1234 4.5V tR V DR 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 123 123 123 123 DON’T CARE 1234 1234 1234 1234UNDEFINED MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C6405 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 ttRC RC ADDRESS VALID ttAA AA ttOH OH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10 ttRC RC CE\ ttAOE AOE t HZOE tHZOE tLZOE tLZOE OE\ ttLZCE LZCE tACE tACE DQ tHZCE tHZCE HIGH-Z DATA VALID ttPU PU ttPD PD Icc 1234 1234 1234DON’T CARE 1234 1234 1234 1234 UNDEFINED MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C6405 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) t WC tWC ADDRESS tAW tAW ttAS AS t AH tAH tCW tCW CE\ 1234567890123456789012 1 1 WE\ 1234567890123456789012 t WP tWP1 1123456789012345678901234567890121234567890 1123456789012345678901234567890121234567890 t DH tDH ttDS DS DQ D DATA VAILD Q HIGH-ZHIGH Z Q WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW 12345678901234567 121 12345678901234567 12 12345678901234567 121 CE\ ttAS AS WE\ ttAH AH tCW tCW 12345678901234567890123 1 1212345678901234567890123 112345678901234567890123 t WP tWP1 123456789 123456789 123456789 tDS DQ D Q Q t DH tDH DATA VALID HIGH-Z HIGH-Z 1234 1234 1234DON’T CARE 1234 12345 12345 12345 12345UNDEFINED NOTE: Output enable (OE\) is inactive (HIGH). MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C6405 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD 5962-86859, Case Outline L D A Q L E S1 b2 e b eA c SYMBOL A b b2 c D E eA e L Q S1 SMD SPECIFICATIONS MIN MAX --0.200 0.014 0.026 0.045 0.065 0.008 0.018 --1.280 0.220 0.310 0.300 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C6405 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-86859, Case Outline U D1 B2 D2 L2 e E3 E E1 E2 h x 45o D L hx45o B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2 SMD SPECIFICATIONS MIN MAX 0.060 0.075 0.050 0.065 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C6405 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C6405C-25L/XT Device Number EXAMPLE: MT5C6405EC-15L/IT Package Speed Options** Process Type ns Device Number Package Speed Options** Process Type ns MT5C6405 C -12 L /* MT5C6405 EC -12 L /* MT5C6405 C -15 L /* MT5C6405 EC -15 L /* MT5C6405 C -20 L /* MT5C6405 EC -20 L /* MT5C6405 C -25 L /* MT5C6405 EC -25 L /* MT5C6405 C -35 L /* MT5C6405 EC -35 L /* MT5C6405 C -45 L /* MT5C6405 EC -45 L /* MT5C6405 C -55 L /* MT5C6405 EC -55 L /* MT5C6405 C -70 L /* MT5C6405 EC -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM Austin Semiconductor, Inc. MT5C6405 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator EC ASI Package Designator C ASI Part # MT5C6805C-35/883C MT5C6805C-35L/883C MT5C6805C-45/883C MT5C6805C-45L/883C MT5C6805C-55/883C MT5C6805C-55L/883C MT5C6805C-70/883C MT5C6805C-70L/883C SMD Part # 5962-8685918LA 5962-8685917LA 5962-8685916LA 5962-8685915LA 5962-8685914LA 5962-8685913LA 5962-8685912LA 5962-8685911LA ASI Part # MT5C6805EC-35/883C MT5C6805EC-35L/883C MT5C6805EC-45/883C MT5C6805EC-45L/883C MT5C6805EC-55/883C MT5C6805EC-55L/883C MT5C6805EC-70/883C MT5C6805EC-70L/883C SMD Part # 5962-8685918UA 5962-8685917UA 5962-8685916UA 5962-8685915UA 5962-8685914UA 5962-8685913UA 5962-8685912UA 5962-8685911UA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C6405 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11