NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ 120 mW @ −4.5 V 144 mW @ −2.5 V −20 V Applications P−Channel MOSFET D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V −860 mA Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C TA = 70°C Steady State Continuous Drain Current (Note 1) tv5s TA = 25°C TA = 70°C ID PD ID −950 mA 195 mW @ −1.8 V • Load/Power Switches • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc. Parameter ID Max −690 G S MARKING DIAGRAM 6 170 mW −950 mA −760 1 SOT−563−6 CASE 463A TX M G G tv5s PD 210 mW tp = 10 ms IDM −4.0 A TX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) TJ, TSTG −55 to 150 °C PINOUT: SOT−563 Source Current (Body Diode) IS −360 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 720 °C/W Junction−to−Ambient – t v 5 s (Note 1) RqJA 600 Power Dissipation (Note 1) Pulsed Drain Current Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces). © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 D 1 6 D D 2 5 D G 4 S 3 Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NTZS3151P/D NTZS3151P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V −13 mV/°C VGS = 0 V TJ = 25°C −1.0 VDS = −20 V TJ = 125°C −5.0 IGSS VDS = 0 V, VGS = "8.0 V VGS(TH) VGS = VDS, ID = −250 mA "100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance gFS −1.0 2.4 VGS = −4.5 V, ID = −950 mA RDS(on) −0.45 V mV/°C 120 150 mW VGS = −4.5 V, ID = −770 mA 112 142 VGS = −2.5 V, ID = −670 mA 144 200 VGS = −1.8 V, ID = −200 mA 195 240 VDS = −10 V, ID = −810 mA 3.1 S 458 pF CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = −16 V 61 38 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.2 td(ON) 5.0 nC 5.6 VGS = −4.5 V, VDS = −10 V; ID = −770 mA 0.6 0.9 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time tr td(OFF) Fall Time VGS = −4.5 V, VDD = −10 V, ID = −950 mA, RG = 6.0 W tf ns 12 23.7 18 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = −360 mA TJ = 25°C −0.64 TJ = 125°C −0.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = −360 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 10.5 −0.9 V ns NTZS3151P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 3.5 −1.8 V VGS = −3 V VGS = −2 V 3 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 4 TJ = 25°C −1.6 V 2.5 2 −1.4 V 1.5 1 −1.2 V 0.5 −1 V 0 0.5 1 1.5 2.5 2 3 3.5 4 4.5 3 2.5 2 1.5 1 0.5 5 0.5 1.5 2 2.5 1 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.2 TJ = 125°C 0.1 TJ = 25°C TJ = −55°C 0 1 2 3 −ID, DRAIN CURRENT (AMPS) 0 4 0.3 3 TJ = 25°C VGS = −1.8 V 0.2 VGS = −2.5 V VGS = −4.5 V 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Drain Current and Temperature 10000 ID = −0.95 A VGS = −4.5 V VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 125°C 0 VGS = −4.5 V 1.6 25°C −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.3 1.8 TJ = −55°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VDS ≥ −10 V 3.5 1.4 1.2 1 TJ = 125°C 1000 0.8 0.6 −50 −25 0 25 50 75 100 125 150 100 0 5 10 15 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTZS3151P VDS = 0 V C, CAPACITANCE (pF) 900 VGS = 0 V TJ = 25°C CRSS 800 700 600 CISS 500 400 300 200 COSS 100 0 10 5 0 −VGS −VDS 5 10 15 20 25 30 5 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 25 4 −VGS 20 3 15 QGS 2 QGD 1 0 10 0 1 5 ID = −0.77 A TJ = 25°C −VDS 5 2 3 4 QG, TOTAL GATE CHARGE (nC) 6 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1.2 VDD = −25 V ID = −0.95 A VGS = −4.5 V −IS, SOURCE CURRENT (AMPS) t, TIME (ns) 1000 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 td(off) tf tr 10 td(on) 100 10 0.8 0.6 0.4 0.2 0 0.1 1 1 1.0 VGS = 0 V TJ = 25°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current ORDERING INFORMATION Device Package Shipping NTZS3151PT1G SOT−563 (Pb−Free) 4000 / Tape & Reel NTZS3151PT5G SOT−563 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTZS3151P PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 5 6 1 e 2 A 4 E −Y− 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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