ON MPSW64 One watt darlington transistors(pnp silicon) Datasheet

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by MPSW63/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR 3
*Motorola Preferred Device
BASE
2
EMITTER 1
MAXIMUM RATINGS
1
Symbol
MPSW63
MPSW64
Unit
Collector – Emitter Voltage
VCES
–30
Vdc
Collector – Base Voltage
VCBO
–30
Vdc
Emitter – Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Rating
Operating and Storage Junction
Temperature Range
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)CES
–30
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
—
–100
nAdc
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
—
–100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
MPSW63
MPSW64
5,000
10,000
—
—
MPSW63
MPSW64
10,000
20,000
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –10 mAdc, VCE = –5.0 Vdc)
hFE
(IC = –100 mAdc, VCE = –5.0 Vdc)
—
Collector–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –0.1 mAdc)
VCE(sat)
—
–1.5
Vdc
Base–Emitter On Voltage
(IC = –100 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
–2.0
Vdc
fT
125
—
MHz
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
2. fT = |hfe| • ftest.
v 300 ms, Duty Cycle v 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
h FE, DC CURRENT GAIN (X1.0 k)
200
TJ = 125°C
100
70
50
–10 V
25°C
30
VCE = –2.0 V
20
–5.0 V
10
7.0
5.0
3.0
2.0
–0.3
–55°C
–0.5
–0.7
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–30
–20
–50
–70
–100
–200
–300
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0
TJ = 25°C
V, VOLTAGE (VOLTS)
–1.6
VBE(sat) @ IC/IB = 100
–1.2
–0.8
VBE(on) @ VCE = –5.0 V
VCE(sat) @ IC/IB = 1000
IC/IB = 100
–0.4
0
–0.3 –0.5 –1.0
2
–3.0 –5.0
–10
–30 –50 –100
–300
–2.0
TJ = 25°C
–1.8
–1.6
–50 mA –100 mA –175 mA
–300 mA
–1.4
–1.2
–1.0
–0.8
IC = –10 mA
–0.6
–0.1 –0.3
–1.0 –3.0
–10
–30
–100 –300 –1 k –3 k –10 k
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. “ON” Voltage
Figure 3. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
+5.0
+4.0
*APPLIES FOR IC/IB ≤ hFE/100
+3.0
+25°C TO +125°C
+2.0
+1.0
–50°C TO +25°C
0
–1.0
–2.0
*RqVC FOR VCE(sat)
–3.0
–50°C TO +25°C
–4.0
RqVB FOR VBE
–5.0
–0.3 –0.5 –1.0 –2.0
20
+25°C TO +125°C
–5.0
–10
–50 –100
–20
100
–10 V
60
–5.0 V
40
30
20
–0.3 –0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100
–300
Figure 5. Current–Gain — Bandwidth Product
–2 k
IC , COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
VCE = –20 V
200
Figure 4. Temperature Coefficients
Cibo
7.0
TJ = 25°C
f = 1.0 MHz
3.0
2.0
–0.1 –0.2
TJ = 25°C
400
300
IC, COLLECTOR CURRENT (mA)
Cobo
5.0
600
IC, COLLECTOR CURRENT (mA)
15
10
–300
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
R qV , TEMPERATURE COEFFICIENT (mV/ °C)
–0.5
–1.0
–2.0
–5.0
–10
–20 –30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–1 k
100 ms
1.0 mS
–500
1.0 s
TC = 25°C
TA = 25°C
–200
DUTY CYCLE ≤ 10%
–100
–1.5 –2.0
–5.0
–10
–20
VR, REVERSE VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 7. Active Region, Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–30
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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*MPSW63/D*
MPSW63/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
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