NCE Power NCE20N60 Super junction mosfet Datasheet

NCE20N60,NCE20N60F
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
VDS@Tjmax
650
V
technology and design to provide excellent RDS(ON) with low
RDS(ON)
190
mΩ
gate charge. This super junction MOSFET fits the industry’s
ID
20
A
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
Application
●
Power factor correction(PFC)
●
Switched mode power supplies(SMPS)
●
Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
NCE20N60
TO-220
NCE20N60F
TO-220F
Marking
NCE20N60
TO-220
Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V)
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
ID (DC)
(Note 1)
IDM (pluse)
Pulsed drain current
TO-220F
Table 1.
Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =
125 °C
Derate above 25°C
(Note 2)
Single pulse avalanche energy
(Note 1)
Avalanche current
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
NCE20N60F
Unit
600
V
±30
V
20
20*
A
12.5
12.5*
A
60
60*
A
dv/dt
PD
Maximum Power Dissipation(Tc=25℃)
NCE20N60
V/ns
50
208
34.5
W
1.67
0.28
W/°C
EAS
690
mJ
IAR
20
A
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
EAR
1
mJ
TJ,TSTG
-55...+150
°C
* limited by maximum junction temperature
Table 2.
Thermal Characteristic
Parameter
Symbol
NCE20N60
NCE20N60F
Unit
Thermal Resistance,Junction-to-Case(Maximum)
RthJC
0.6
3.6
°C /W
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJA
62
80
°C /W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
650
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=600V,VGS=0V
1
μA
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=600V,VGS=0V
100
μA
Gate-Body Leakage Current
IGSS
VGS=±30V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10A
190
mΩ
Forward Transconductance
gFS
VDS = 20V, ID = 10A
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.5
V
3
Dynamic Characteristics
VDS=100V,VGS=0V,
F=1.0MHz
VDS=480V,ID=20A,
VGS=10V
17.5
S
2300
PF
95
PF
7
PF
85
114
nC
11
nC
33
nC
10
nS
nS
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=380V,ID=20A,
5
td(off)
RG=3.6Ω,VGS=10V
67
100
nS
4
12
nS
20
A
60
A
1.3
V
Turn-Off Delay Time
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
Pulsed Source-drain current(Body Diode)
ISDM
Forward on voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
TC=25°C
Tj=25°C,ISD=20A,VGS=0V
Tj=25°C,IF=20A,di/dt=100A/μs
0.9
500
nS
11
nC
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE20N60
Figure3. Source-Drain Diode Forward Voltage
Figure5. Transfer characteristics
Wuxi NCE Power Semiconductor Co., Ltd
Figure2. Safe operating area for NCE20N60F
Figure4. Output characteristics
Figure6. Static drain-source on resistance
Page 3
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Capacitance
Wuxi NCE Power Semiconductor Co., Ltd
Figure10. Gate charge waveforms
Figure11. Transient Thermal Impedance for NCE20N60
Page 4
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
Figure11. Transient Thermal Impedance for NCE20N60F
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
Test circuit
1)Gate charge test circuit & Waveform
2)Switch Time Test Circuit:
3)Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 6
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.470
4.670
0.176
0.184
A1
2.520
2.820
0.099
0.111
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
10.010
10.350
0.394
0.407
E
8.500
8.900
0.335
0.350
E1
12.060
12.460
0.475
0.491
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.590
2.890
0.102
0.114
H
8.440 REF.
0.332 REF.
h
0.000
0.300
0.000
0.012
L
13.400
13.800
0.528
0.543
L1
3.560
3.960
0.140
0.156
V
6.060 REF.
0.239 REF.
I
6.600 REF.
0.260 REF.
Φ
3.735
Wuxi NCE Power Semiconductor Co., Ltd
3.935
Page 7
0.147
0.155
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
TO-220F Package Information
Symbol
A
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
4.300
4.700
0.169
0.185
A1
1.300REF
0.051REF
A2
2.800
3.200
0.110
0.126
A3
2.500
2.900
0.098
0.114
b
0.500
0.750
0.020
0.030
b1
1.100
1.350
0.043
0.053
b2
1.500
1.750
0.059
0.069
c
0.500
0.750
0.020
0.030
D
9.960
10.360
0.392
0.408
E
14.800
15.200
0.583
0.598
e
2.540TYP.
0.100TYP
F
2.700REF
0.106REF
Φ
3.500REF
0.138REF
h1
0.800REF
0.031REF
h2
0.500REF
0.020REF
L
28.000
28.400
1.102
1.118
L1
1.700
1.900
0.067
0.075
L2
1.900
2.100
0.075
0.083
Wuxi NCE Power Semiconductor Co., Ltd
Page 8
v1.0
NCE20N60,NCE20N60F
Pb-Free Product
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
Page 9
v1.0
Similar pages