Diotec BF822 Surface mount si-epitaxial planartransistor Datasheet

BF 820, BF 822
NPN
High Voltage Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1=B
2=E
3=C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BF 820
BF 822
Collector-Emitter-voltage
B open
VCE0
300 V
250 V
Collector-Base-voltage
E open
VCB0
300 V
250 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
50 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
100 mA
Peak Base current – Basis-Spitzenstrom
IBM
50 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
ICB0
–
–
10 nA
IE = 0, VCB = 200 V, Tj = 150/C
ICB0
–
–
10 :A
IEB0
–
–
50 nA
–
–
600 mV
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 30 mA, IB = 5 mA
1
VCEsat
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2
01.11.2003
High Voltage Transistors
BF 820, BF 822
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
hFE
50
–
–
fT
60 MHz
–
–
–
1.6 pF
–
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 20 V, IC = 25 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 30 V, IE = ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
CCB0
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
420 K/W 2)
BF 821, BF 823
BF 820 = 1V
BF 822 = 1X
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
3
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