STMicroelectronics D45H8 Pnp silicon power transistor Datasheet

D45H5
D45H8 \ D45H11
®
PNP SILICON POWER TRANSISTORS
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
FAST SWITCHING SPEED
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
■
3
1
DESCRIPTION
The D45H5, D45H8 and D45H11 are silicon
Multi-Epitaxial Planar PNP transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D45H8, D45H11 are complementary with D44H8,
D44H11.
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
Unit
D45H5
D45H8
D45H11
-45
-60
-80
-5
V
V
Collector Current
-10
A
Collector Peak Current
-20
A
-5
A
Base Current
o
P tot
Total Dissipation at T c ≤ 25 C
T stg
Storage Temperature
Tj
Value
Max. Operating Junction Temperature
February 2003
50
W
-65 to 150
o
C
150
o
C
1/5
D45H5/D45H8/D45H11
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
2.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CBO
Collector Cut-off
Current (I E = 0)
V CB = rated V CEO
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = -5V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = -100 mA
for D45H5
for D45H8
for D45H11
Min.
Typ.
Max.
Unit
-10
µA
-100
µA
V
V
-45
-60
-80
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = -8 A
I C = -8 A
I B = -0.4 A
I B = -0.8 A
-1
-1
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = -8 A
I B = -0.8 A
-1.5
V
DC Current Gain
I C = -2 A
I C = -4 A
V CE = -1 V
V CE = -1 V
h FE ∗
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Safe Operating Area
2/5
Derating Curves
60
40
120
70
D45H5/D45H8/D45H11
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/5
D45H5/D45H8/D45H11
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
4/5
D45H5/D45H8/D45H11
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5
Similar pages