SAVANTIC BU526A Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BU526 BU526A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Short switching times.
·High dielectric strength.
APPLICATIONS
·For use in power supply units of TV receives.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
BU526
UNIT
900
V
400
Open base
BU526A
VEBO
VALUE
Emitter-base voltage
V
460
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
PT
Total power dissipation
86
W
Tj
Junction temperature
175
Tstg
Storage temperature
-65~175
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.04
/W
SavantIC Semiconductor
Product Specification
BU526 BU526A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
BU526
MIN
TYP.
MAX
UNIT
400
V
IC=50mA; IB=0;
460
BU526A
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0;
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=1 A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A;IB=3 A
5.0
V
Base-emitter saturation voltage
IC=5A;IB=1 A
1.6
V
ICBO
Collector cut-off current
VCB=900V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V;IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
VBEsat
2
7
15
V
45
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU526 BU526A
Similar pages