Bias Resistor Transistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. PNP SILICON BIAS RESISTOR TRANSISTOR • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. 3 PIN2 base (Input) R1 PIN3 Collector (Output) 1 2 R2 PIN2 Emitter (Ground) CASE 318–03 , STYLE 1 ( SC – 59 ) MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ T A = 25°C (1) Derate above 25°C Symbol VCBO V CEO IC PD Value 50 50 100 200 1.6 Unit Vdc Vdc mAdc mW mW/°C Symbol R θ JA T J , T stg Value 625 –65 to +150 Unit °C/W °C TL 260 10 °C Sec THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes Time in Solder Bath DEVICE MARKING AND RESISTOR VALUES 8 8 Device Marking R1 (K) R2 (K) MUN2111RT1 6A 10 10 MUN2112RT1 6B 22 22 MUN2113RT1 6C 47 47 MUN2114RT1 6D 10 47 MUN2115RT1 (2) 6E 10 MUN2116RT1 (2) 6F 4.7 MUN2130RT1 (2) 6G 1.0 1.0 MUN2131RT1 (2) 6H 2.2 2.2 MUN2132RT1 (2) 6J 4.7 4.7 MUN2133RT1 (2) 6K 4.7 47 MUN2134R T1 (2) 6L 22 47 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. P1–1/7 MUN2111RT1 SERIES ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit I CBO I CEO I EBO 50 50 - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 - nAdc nAdc mAdc 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 - OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB=50V, I E = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current MUN2111RT1 (VEB = 6.0 V, IC = 0) MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0) ON CHARACTERISTICS V(BR)CBO V(BR)CEO Vdc Vdc (3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111RT1 hFE MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) VCE(sat) (IC = 10 mA, IB = 0.3 mA) MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1 (IC = 10 mA, IB = 5.0 mA) MUN2131RT1 MUN2116RT1 MUN2132RT1 (IC = 10 mA, IB = 1.0 mA) MUN2134RT1 Output Voltage (on) VOL (VCC=5.0V,VB=2.5V, RL=1.0kΩ) MUN2111RT1 MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 (VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MUN2113RT1 Vdc - - 0.25 - - 0.25 - - 0.25 Vdc - - 0.2 - - 0.2 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% P1–2/7 MUN2111RT1 SERIES ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, R L = 1.0kΩ) (VCC= 5.0V, VB = 0.050 V, RL =1.0kΩ) MUN2130RT1 (VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ) MUN2115RT1 MUN2116RT1 MUN2131RT1 MUN2132RT1 Input Resistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Resistor Ratio MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Symbol VOH Min 4.9 Typ — Max — Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 kΩ R 1 /R 2 0.8 0.17 — 0.8 0.055 0.38 1.0 0.21 — 1.0 0.1 0.47 1.2 0.25 — 1.2 0.185 0.56 P1–3/7 MUN2111RT1 SERIES V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) P D , POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2111RT1 250 200 150 100 R 50 θJA = 625°C/W 0 –50 0 50 10 1 I C /I B =10 T A = –25°C 75°C 0.1 0.01 150 0 20 V CE 60 80 4 = 10 V T A =75°C 25°C 100 –25°C 10 f = 1 MHz l E= 0 V T A = 25°C 3 2 1 0 1 10 100 0 100 V in , INPUT VOLTAGE (VOLTS) T A = –25°C 10 20 30 40 50 100 25°C 75°C 10 V R , REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain I C , COLLECTOR CURRENT (mA) 40 I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C C ob , CAPACITANCE (pF) h FE , DC CURRENT GAIN (NORMALIZED) AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve 1000 25°C 1 0.1 0.01 V O= 5 V 0.001 V O = 0.2 V T A = –25°C 10 25°C 75°C 1 0.1 0 1 2 3 4 5 6 7 8 9 V in , INPUT VOLTAGE (VOLTS) Figure 5. Output Current versus Input Voltage 10 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current P1–4/7 MUN2111RT1 SERIES h FE , DC CURRENT GAIN (NORMALIZED) V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2112RT1 10 I C /I B =10 T A = –25°C 25°C 75°C 1 0.1 0.01 0 20 40 60 1000 V 25°C 100 10 1 10 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 2 1 0 10 20 30 40 25°C 75°C T A = 25°C T A = –25°C 10 1 0.1 0.01 V O= 5 V 0.001 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) 0 100 Figure 7. V CE(sat) versus I C 4 C ob , CAPACITANCE (pF) –25°C I C , COLLECTOR CURRENT (mA) 3 = 10 V T A =75°C 80 f = 1 MHz l E= 0 V CE V O = 0.2 V T A = –25°C 25°C 10 75°C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current P1–5/7 MUN2111RT1 SERIES h FE , DC CURRENT GAIN (NORMALIZED) V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2113RT1 1 I C /I B =10 T A = –25°C 25°C 75°C 0.1 0.01 0 10 20 30 T A =75°C 25°C –25°C 100 10 40 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain 1 100 I C , COLLECTOR CURRENT (mA) l E= 0 V T A = 25°C 0.8 25°C T A = 75°C f = 1 MHz 0.6 0.4 0.2 0 –25°C 10 1 0.1 0.01 V O= 5 V 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 1000 V O = 0.2 V T A=–25°C 25°C 75°C 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current P1–6/7 MUN2111RT1 SERIES 1 I C /I B =10 T A = –25°C 25°C 75°C 0.1 0.01 0 10 20 30 40 h FE , DC CURRENT GAIN (NORMALIZED) V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2114RT1 V 160 CE T A =75°C = 10V 25°C 140 –25°C 120 100 80 60 40 20 0 1 2 4 6 8 10 15 40 50 60 70 I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain 80 90 100 100 3.5 I C , COLLECTOR CURRENT (mA) f = 1 MHz l E= 0 V 4 T A= 25°C 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 T A = 75°C 25°C –25°C 10 V O= 5 V 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 12 V 10 V in , INPUT VOLTAGE (VOLTS) 20 I C , COLLECTOR CURRENT (mA) 4.5 C ob , CAPACITANCE (pF) 180 V O = 0.2 V T A = –25°C 25°C Typical Application for PNP BRTs 75°C 1 LOAD 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source P1–7/7