SeCoS BCP156 Planar high performance transistor Datasheet

BCP156
NPN Silicon
Planar High Performance Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-89
Description
The BCP156 is designed for general purpose
switching and amplifier applications.
Features
* 3 Amp Continuous Current
* 60 Volt VCEO
* Low Saturation Voltage
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
o
Absolute Maximum Ratings at TA=25 C
Symbol
Value
Units
VCBO
Collector-Base Voltage
80
V
VCEO
VEBO
Collector-Emitter Voltage
60
Emitter-Base Voltage
5
V
V
IC
Collector Current (DC)
Collector Current (Pulse)
3
6
PD
TJ,Tstg
Parameter
1.2
Total Power Dissipation
Junction and Storage Temperature
-55~+150
A
W
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
I CBO
I EBO
*VCE(sat)1
*VCE(sat)2
Min
80
60
5
-
Typ.
-
0.12
0.43
*VBE (sat)
0.9
Base-Emitter Saturation Voltage
*VBE (on)
0.8
*hFE1
70
200
*hFE2
100
200
DC Current Gain
*hFE3
80
170
80
40
*hFE4
Gain-Bandwidth Product
175
fT
140
Output Capacitance
Cob
Time-On
45
ton
Time-Off
toff
800
* Measured under pulse condition. Pulse width≦300µs, Duty Cycle≦2%
Collector Saturation Voltage
Max
100
100
Unit
V
V
V
nA
nA
0.3
0.6
1.25
1
300
-
V
V
V
V
30
-
MH z
pF
ns
Test Conditions
I C=100 µA,IE=0
I C=10mA,IB=0
I E=100µA,IC=0
VCB= 60V,IE=0
VEB=4V,IC=0
I C=1A,IB=0.1A
I C=3A,IB=0.3A
I C=1A,IB=0.1A
I C=1A,VCE=2V
VCE= 2 V, I C=50mA
VCE= 2 V, I C=500mA
VCE= 2 V, I C=1A
VCE= 2 V, I C=2 A
VCE= 5 V, IC=100m A,f=100MHz
VCB=10V , f=1MHz
VCC= 10V,IC=500mA,IB1=IB2=50mA
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
BCP156
Elektronische Bauelemente
NPN Silicon
Planar High Performance Transistor
Characteristics Curve
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Emitter Voltage (V)
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Collector Current (A)
Any changing of specification will not be informed individual
Page 2 of 2
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