MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE FS3UM-10 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 500V ¡rDS (ON) (MAX) ................................................................. 4.4Ω ¡ID ............................................................................................ 3A e TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 500 ±30 V V 3 9 60 A A W –55 ~ +150 –55 ~ +150 2.0 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 500 ±30 — — — — — — ±10 V V µA VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V — 2 — — — 3 3.4 3.4 1 4 4.4 4.4 mA V Ω V 1.0 — — — 1.5 300 35 6 — — — — S pF pF pF — — — — 13 10 30 30 — — — — ns ns ns ns — 1.5 2.0 V — — 2.08 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω IS = 1A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES DRAIN CURRENT ID (A) 80 60 40 20 0 0 DRAIN CURRENT ID (A) 10 50 100 150 tw=10µs 100µs 100 7 5 3 2 1ms 10ms DC 10–1 7 5 3 2 TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 8V 6 4 6V 2 5V 10 20 5 TC = 25°C Pulse Test PD = 60W 0 101 7 5 3 2 10–2 200 8 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 4 PD = 60W VGS = 20V 10V 8V 6V 3 2 5V 1 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 32 24 ID = 4A 16 3A 2A 8 1A 0 0 4 8 12 16 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 8 12 16 VDS = 10V Pulse Test 3 2 TC = 25°C 100 7 5 75°C 125°C 3 2 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 Ciss Coss 101 7 Tch = 25°C Crss 5 f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) 4 102 7 5 3 2 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 2 3 2 4 TRANSFER CHARACTERISTICS (TYPICAL) 4 7 5 20V DRAIN CURRENT ID (A) TC = 25°C VDS = 50V Pulse Test 0 6 GATE-SOURCE VOLTAGE VGS (V) 6 0 VGS = 10V 8 0 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 20 10 8 TC = 25°C Pulse Test 3 2 102 7 5 3 2 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω tf td(off) td(on) 101 tr 7 5 10–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 100V 200V 12 400V 8 4 101 7 5 0 4 8 12 16 25°C 6 75°C 4 2 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 VGS = 0V Pulse Test GATE CHARGE Qg (nC) 3 2 10–1 TC = 125°C 8 0 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) 10 Tch = 25°C ID = 3A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999