IRF IR2010PBF Floating channel designed for bootstrap operation Datasheet

IR2010(S)PBF
High and Low Side Driver
Features
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Product Summary
Floating channel designed for bootstrap operation
Fully operational to 200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground +/-5V offset
CMOS Schmitt-triggered inputs with pull-down
Shut down input turns off both channels
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Description
VOFFSET (max)
200V
IO+/- (typ)
3.0A / 3.0A
VOUT
10 – 20V
ton/off (typ)
95ns & 65ns
Delay Matching (max)
15ns
Package Options
The IR2010 is a high power, high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Logic inputs are compatible
with standard CMOS or LSTTL output, down to 3.0V logic.
The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side
configuration which operates up to 200 volts. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.
14-Lead PDIP
16-Lead SOIC
Wide Body
Applications


Converters
DC motor drive
Ordering Information
Standard Pack
Base Part Number
Package Type
IR2010PBF
IR2010SPBF
IR2010SPBF
PDIP14
SO16W
SO16W
1
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© 2015 International Rectifier
Form
Tube
Tube
Tape and Reel
Quantity
25
45
1000
Orderable Part Number
IR2010PBF
IR2010SPBF
IR2010STRPBF
April 14, 2015
IR2010(S)PBF
Typical Connection Diagram
200V
HO
VDD
VDD
VB
HIN
HIN
VS
SD
SD
LIN
LIN
VCC
VSS
VSS
COM
To Load
LO
VCC
(Refer to Lead Assignments for correct configuration.) This diagram shows electrical connections only. Please refer to our Application Notes
and Design Tips for proper circuit board layout
2
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© 2015 International Rectifier
April 14, 2015
IR2010(S)PBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RthJA
TJ
TS
TL
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (figure 2)
14-Lead PDIP
Package power dissipation
@ TA ≤ +25°C
16-Lead SOIC
14-Lead PDIP
Thermal resistance, junction to
ambient
16-Lead SOIC
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
VB - 25
VS - 0.3
-0.3
-0.3
-0.3
VCC - 25
VSS - 0.3
—
—
—
—
—
—
-55
—
Max.
225
VB + 0.3
VB + 0.3
25
VCC + 0.3
VSS + 25
VCC + 0.3
VDD + 0.3
50
1.6
1.25
75
100
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within
the recommended conditions. The VS and VSS offset rating is tested with all supplies biased at 15V differential.
Typical ratings at other bias conditions are shown in figures 24 and 25.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
TA
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN, & SD)
Ambient temperature
Min.
Max.
Units
VS + 10
VS
VS + 20
200
VB
V
10
0
VSS + 3
-5††
VSS
-40
20
VCC
VSS + 20
5
VDD
125
°C
†
† Logic operational for VS of -4 to +200V. Logic state held for VS of -4V to -VBS.
†† When VDD < 5V, the minimum VSS offset is limited to -VDD
(Please refer to the Design Tip DT97-3 for more details).
3
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© 2015 International Rectifier
April 14, 2015
IR2010(S)PBF
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, CL = 1000pF and TA = 25°C and VSS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in figure 3.
Symbol
ton
toff
tsd
tr
tf
MT
Definition
Figure
Min.
Typ.
Max.
7
8
9
10
11
6
50
30
35
—
—
—
95
65
70
10
15
—
135
105
105
20
25
15
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
Units
Test Conditions
VS = 0V
VS = 200V
ns
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V and TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VIH
VIL
VIH
VIL
VOH
VOL
ILK
IQBS
IQCC
IQDD
IIN+
IINVBSUV+
VBSUVVCCUV+
VCCUVIO+
IO-
4
Definition
Logic “1” input voltage
Logic “0” input voltage
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Quiescent VDD supply current
Logic “1” input bias current
Logic “0” input bias current
VBS supply undervoltage positive
going threshold
VBS supply undervoltage negative
going threshold
VCC supply undervoltage positive
going threshold
VCC supply undervoltage negative
going threshold
Output high short circuit pulsed
current
Output low short circuit pulsed
current
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Figure
12
13
12
13
14
15
16
17
18
19
20
21
Min.
9.5
—
2
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
70
100
1
20
—
Max.
—
6.0
—
1
1.0
0.1
50
210
230
5
40
1.0
22
7.5
8.6
9.7
23
7.0
8.2
9.4
© 2015 International Rectifier
Units
Test Conditions
VDD = 15V
V
VDD = 3.3V
IO = 0A
VB = VS = 200V
μA
VIN = 0V or VDD
VIN = VDD
VIN = 0V
V
24
7.5
8.6
9.7
25
7.0
8.2
9.4
26
2.5
3.0
—
27
2.5
3.0
—
A
VO = 0V, VIN = VDD
PW ≤ 10 μs
VO = 15V, VIN = 0V
PW ≤ 10 μs
April 14, 2015
IR2010(S)PBF
Functional Block Diagram
5
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April 14, 2015
IR2010(S)PBF
Lead Definitions
Symbol Description
VDD
HIN
SD
LIN
VSS
VB
HO
VS
VCC
LO
COM
Logic Supply
Logic input for high side gate driver outputs (HO), in phase
Logic input for shutdown
Logic input for low side gate driver outputs (LO), in phase
Logic ground
High side floating supply
High side gate drive output
High side floating supply return
Low side supply
Low side gate drive output
Low side return
Lead Assignments
14-Lead PDIP
6
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© 2015 International Rectifier
16-Lead SOIC (Wide Body)
April 14, 2015
IR2010(S)PBF
Application Information and Additional Details
HV = 10 to 200V
VCC = 15V
0.1µF
+
100µF
200µH
10KF6
10µF
HIN
LIN
10KF6
0.1µF
VDD
VCC
VB
VS
10KF6
SD
HIN
HO
LO
HO
dVS
<50 V/ns
dt
HO
SD
LIN
VSS
Figure 1. Input/Output Timing Diagram
OUTPUT
MONITOR
LO
IRF820
COM
Figure 2. Floating Supply Voltage Transient Test
Circuit
VCC = 15V
0.1µF
0.1µF
10µF
VDD
VCC
10µF
VB
VS
CL
HIN
HIN
SD
HO
HO
+ VB
15V
- V
S
(0 to 200V)
50%
50%
HIN
LIN
toff
tr
tf
ton
10µF
90%
90%
SD
LIN
LIN
LO
LO
HO
LO
10%
CL
VSS
COM
Figure 3. Switching Time Test Circuit
HO
LO
Figure 4. Switching Time Waveform Definition
HIN
LIN
50%
SD
10%
tsd
50%
50%
LO
HO
10%
90%
MT
MT
90%
LO
Figure 5. Shutdown Waveform Definitions
7
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HO
Figure 6. Delay Matching Waveform Definitions
April 14, 2015
IR2010(S)PBF
Figure 7A. Turn-on Time vs. Temperature
Figure 7B. Turn-on Time vs. VCC/VBS Voltage
Figure 7C. Turn-on Time vs. VDD Voltage
Figure 8A. Turn-off Time vs. Temperature
Figure 8B. Turn-off Time vs. VCC/VBS Voltage
Figure 8C. Turn-off Time vs. VDD Voltage
8
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IR2010(S)PBF
Figure 9A. Shutdown Time vs. Temperature
Figure 9B. Shutdown Time vs. VCC/VBS Voltage
Figure 9C. Shutdown Time vs. VDD Voltage
Figure 10A. Turn-on Rise Time vs. Temperature
Figure 10B. Turn-on Rise Time vs. VBIAS
(VCC=VBS=VDD) Voltage
Figure 11A. Turn-off Fall Time vs. Temperature
9
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IR2010(S)PBF
Figure 11B. Turn-Off Fall Time vs. VBIAS
(VCC=VBS=VDD) Voltage
Figure 12A. Logic “1” Input Threshold vs.
Temperature
Figure 12B. Logic “1” Input Threshold vs. VDD
Voltage
Figure 13A. Logic “0” Input Threshold vs.
Temperature
Figure 13B. Logic “0” Input Threshold vs. VDD
Voltage
Figure 14A. High Level Output vs. Temperature
10
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IR2010(S)PBF
Figure 14B. High Level Output vs. VBIAS Voltage
Figure 15A. Low Level Output vs. Temperature
Figure 15B. Low Level Output vs. VBIAS Voltage
Figure 16A. Offset Supply Current vs. Temperature
Figure 16B. Offset Supply Current vs. Offset
Voltage
Figure 17A. VBS Supply Current vs. Temperature
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IR2010(S)PBF
Figure 17B. VBS Supply Current vs. VBS Voltage
Figure 18A. VCC Supply Current vs. Temperature
Figure 18B. VCC Supply Current vs. VCC Voltage
Figure 19A. VDD Supply Current vs. Temperature
Figure 19B. VDD Supply Current vs. VDD Voltage
Figure 20A. Logic “1”Input Current vs. Temperature
12
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IR2010(S)PBF
Figure 20B. Logic “1” Input Current vs. VDD Voltage
Figure 21A. Logic “0” Input Current vs.
Temperature
Figure 21B. Logic “0” Input Current vs. VDD Voltage
Figure 22. VBS Undervoltage (+) vs. Temperature
Figure 23. VBS Undervoltage (-) vs. Temperature
Figure 24. VCC Undervoltage (+) vs. Temperature
13
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IR2010(S)PBF
Figure 25. VCC Undervoltage (-) vs. Temperature
Figure 26A. Output Source Current vs. Temperature
Figure 26B. Output Source Current vs. VBIAS Voltage
Figure 27A. Output Sink Current vs. Temperature
Figure 27B. Output Sink Current vs. VBIAS Voltage
Figure 28. IR2010 Tj vs. Frequency
RGATE = 10Ω, VCC = 15V with IRFPE50
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IR2010(S)PBF
15
Figure 29. IR2010 Tj vs. Frequency
RGATE = 16Ω, VCC = 15V with IRFBC40
Figure 30. IR2010 Tj vs. Frequency
RGATE = 22Ω, VCC = 15V with IRFBC30
Figure 31. IR2010 Tj vs. Frequency
RGATE = 33Ω, VCC = 15V with IRFBC20
Figure 32. IR2010 Tj vs. Frequency
RGATE = 10Ω, VCC = 15V with IRFBE50
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IR2010(S)PBF
Figure 33. IR2010S Tj vs. Frequency
RGATE = 16Ω, VCC = 15V with IRFBC40
Figure 34. IR2010S Tj vs. Frequency
RGATE = 22Ω, VCC = 15V with IRFBC30
Figure 35. IR2010S Tj vs. Frequency
RGATE = 33Ω, VCC = 15V with IRFBC20
16
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IR2010(S)PBF
Package Details
17
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April 14, 2015
IR2010(S)PBF
Tape and Reel Details
LOADED TAPE FEED DIRECTION
A
B
H
D
F
C
NOTE : CONTROLLING
DIM ENSION IN M M
E
G
CARRIER TAPE DIMENSION FOR
Metric
Code
Min
Max
A
11.90
12.10
B
3.90
4.10
C
15.70
16.30
D
7.40
7.60
E
10.80
11.00
F
10.60
10.80
G
1.50
n/a
H
1.50
1.60
16SOICW
Imperial
Min
Max
0.468
0.476
0.153
0.161
0.618
0.641
0.291
0.299
0.425
0.433
0.417
0.425
0.059
n/a
0.059
0.062
F
D
C
B
A
E
G
H
REEL DIMENSIONS FOR 16SOICW
Metric
Imperial
Code
Min
Max
Min
Max
A
329.60
330.25
12.976
13.001
B
20.95
21.45
0.824
0.844
C
12.80
13.20
0.503
0.519
D
1.95
2.45
0.767
0.096
E
98.00
102.00
3.858
4.015
F
n/a
22.40
n/a
0.881
G
18.50
21.10
0.728
0.830
H
16.40
18.40
0.645
0.724
18
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April 14, 2015
IR2010(S)PBF
Part Marking Information
IRxxxxx
Part number
YWW ?
Date code
Pin 1
Identifier
? XXXX
?
MARKING CODE
P
Lead Free Released
Non-Lead Free Released
19
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Lot Code
(Prod mode –
4 digit SPN code)
Assembly site code
Per SCOP 200-002
April 14, 2015
IR2010(S)PBF
Qualification Information
†
Qualification Level
Moisture Sensitivity Level
16-Lead SOIC WB
RoHS Compliant
Industrial††
(per JEDEC JESD 47)
Comments: This family of ICs has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
MSL3†††
(per IPC/JEDEC J-STD-020)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility
for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of
other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any
patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This
document supersedes and replaces all information previously supplied.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
20
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April 14, 2015
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