ON MGP15N43CL Internally clamped n-channel igbt Datasheet

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by MGP15N43CL/D
SEMICONDUCTOR TECHNICAL DATA
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate Collector Over–
Voltage Protection from monolithic circuitry for usage as an Ignition
Coil Driver.
15 AMPERES
N–CHANNEL IGBT
VCE(on) = 1.8 V
430 VOLTS
CLAMPED
• Temperature Compensated Gate – Collector Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
C
G
G
C
E
E
CASE 221A–09
STYLE 9
TO–220AB
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
CLAMPED
Vdc
Collector–Gate Voltage
VCER
CLAMPED
Vdc
VGE
CLAMPED
Vdc
Collector Current — Continuous
IC
15
Adc
Total Power Dissipation
Derate above 25°C
PD
136
0.91
Watts
W/°C
TJ, Tstg
– 55 to 175
°C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Gate–Emitter Voltage
Operating and Storage Temperature Range
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150°C
EAS
mJ
300
150
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
RθJC
RθJA
1.1
62.5
°C/W
TL
260
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
IGBT
 Motorola
Motorola, Inc.
1998 Device
Data
1
MGP15N43CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
—
430
—
—
—
—
—
10
150
17
—
22
—
—
10
1.3
—
1.8
4.4
2.1
—
—
—
—
—
2.0
1.8
8.0
20
—
Cies
—
TBD
—
Coes
—
TBD
—
Cres
—
TBD
—
( CC = 400 V,, IC = 6.5 A,,
(V
RG = 1.0 kΩ, L = 300 mH)
td(off)
—
TBD
—
tf
—
TBD
—
( CC = 10 V,, IC = 6.5 A,,
(V
RG = 1.0 kΩ, RL = 1.0 Ω)
td(on)
—
TBD
—
tr
—
TBD
—
QT
—
TBD
—
Q1
—
TBD
—
Q2
—
TBD
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
(IC = 1.0 mA, TJ = – 40°C to 175°C)
V(BR)CES
Zero Gate Voltage Collector Current
(VCE = 360 V, VGE = 0 V)
(VCE = 360 V, VGE = 0 V, TJ = 150°C)
Vdc
µAdc
ICES
Gate–Emitter Clamp Voltage
(IG = 5.0 mA)
V(BR)GES
Gate–Emitter Leakage Current
(VGE = 10 V)
Vdc
µAdc
IGES
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VGE = VCE, IC = 1.0 mA)
Threshold Temperature Coefficient (Negative)
VGE(th)
Collector–to–Emitter On–Voltage
(VGE = 3.5 V, IC = 6.0 A)
(VGE = 4.0 V, IC = 10 A, TJ = 150°C)
VCE(on)
Forward Transconductance
(VCE = 5.0 V, IC = 10 A)
Vdc
mV/°C
Volts
gfe
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCC = 15 V,
V VGE = 0 V,
V
f = 1.0 MHz)
Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (1)
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Gate Charge
(VCC = 350 V,
V IC = 15 A,
A
VGE = 5.0 V)
mSec
mSec
nC
(1) Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
2
Motorola IGBT Device Data
MGP15N43CL
PACKAGE DIMENSIONS
–T–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
T
S
4
A
Q
1 2 3
STYLE 9:
PIN 1.
2.
3.
4.
U
H
K
Z
L
R
V
J
G
D
N
GATE
COLLECTOR
EMITTER
COLLECTOR
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–09
ISSUE Z
Motorola IGBT Device Data
3
MGP15N43CL
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4
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MGP15N43CL/D
Motorola IGBT
Device Data
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