TSC MBR60100PT Dual common cathode schottky rectifier Datasheet

MBR6035PT thru MBR60100PT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-247AD (TO-3P)
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 10 in-lbs maximum
Weight: 6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBR
MBR
MBR
MBR
MBR
6035
6045
6050
6060
6090
60100
PT
PT
PT
PT
PT
PT
100
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
Maximum RMS voltage
VRMS
24
31
35
42
63
70
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
V
Maximum average forward rectified current
IF(AV)
60
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
60
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
420
A
Peak repetitive reverse surge Current (Note 1)
IRRM
1
A
Maximum instantaneous forward voltage (Note 2)
IF=30A, TJ=25℃
IF=30A, TJ=125℃
IF=60A, TJ=25℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change,(Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
VF
IR
dV/dt
0.70
0.75
0.84
0.60
0.65
-
0.82
0.93
0.98
1
30
20
10,000
10
V
V
mA
V/μs
O
RθJC
1.2
TJ
- 55 to +150
O
C
- 55 to +150
O
C
TSTG
C/W
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
Document Number: DS_D1309035
Version: G13
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
PART NO.
PACKING CODE
QUALIFIED
MBR60xxPT
(Note 1)
Prefix "H"
GREEN COMPOUND
C0
CODE
Suffix "G"
PACKAGE
PACKING
TO-3P
30 / Tube
Note 1: "xx" defines voltage from 35V (MBR6035PT) to 100V (MBR60100PT)
EXAMPLE
AEC-Q101
PREFERRED P/N
PART NO.
PACKING CODE
MBR6060PT C0
MBR6060PT
C0
MBR6060PT C0G
MBR6060PT
C0
MBR6060PTHC0
MBR6060PT
QUALIFIED
H
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
C0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
PEAK FORWARD SURGE CURRENT
(A)
FIG.1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD A
CURRENT (A)
75
60
45
30
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
15
0
0
50
100
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
600
8.3ms Single Half Sine Wave
JEDEC Method
500
400
300
200
100
0
1
150
10
NUMBER OF CYCLES AT 60 Hz
CASE TEMPERATURE (oC)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
MBR6035PT-MBR6045PT
MBR6050PT-MBR60100PT
1000
Pulse Width=300μs
1% Duty Cycle
TJ=125℃
MBR6050PT-60100PT
TJ=25℃
MBR6050PT-60100PT
10
TJ=125℃
MBR6035PT-6045PT
1
TJ=25℃
MBR6035PT-6045PT
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
Document Number: DS_D1309035
1
1.1 1.2
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
100
10
TJ=125℃
1
TJ=75℃
0.1
TJ=25℃
0.01
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: G13
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG
MBR6035PT-MBR6045PT
MBR6050PT-MBR6060PT
MBR6090PT-MBR60100PT
100
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10
1000
100
0.1
1
10
100
1
0.1
0.01
0.1
REVERSE VOLTAGE (V)
1
10
100
T-PULSE DURATION (sec)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
15.90
16.40
0.626
0.646
B
7.90
8.20
0.311
0.323
C
5.70
6.20
0.224
0.244
D
20.80
21.30
0.819
0.839
E
3.50
4.10
0.138
0.161
F
19.70
20.20
0.776
0.795
G
-
4.30
-
0.169
H
2.90
3.40
0.114
0.134
I
1.93
2.18
0.076
0.086
J
2.97
3.22
0.117
0.127
K
1.12
1.22
0.044
0.048
L
5.20
5.70
0.205
0.224
M
4.90
5.16
0.193
0.203
N
2.70
3.00
0.106
0.118
O
0.51
0.76
0.020
0.030
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1309035
Version: G13
MBR6035PT thru MBR60100PT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309035
Version: G13
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