DMT6015LFV 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (TYPE UX) BVDSS Features and Benefits RDS(ON) Max ID Max TC = +25°C Low RDS(ON) – Ensures On-State Losses are Minimized 16mΩ @ VGS = 10V 35A 22mΩ @ VGS = 4.5V 28A Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) 60V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: PowerDI 3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) ® ideal for high efficiency power management applications. Motor Control DC-DC Converters Power Management PowerDI3333-8 (Type UX) Pin1 S S D S G G D Top View D D Gate Protection Diode D Bottom View S Internal Schematic Ordering Information (Note 4) Part Number DMT6015LFV-7 DMT6015LFV-13 Notes: Case PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YYWW ADVANCE INFORMATION Product Summary T6V= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) T6V PowerDI is a registered trademark of Diodes Incorporated. DMT6015LFV Document number: DS38454 Rev. 5 - 2 1 of 7 www.diodes.com March 2018 © Diodes Incorporated DMT6015LFV Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +100°C Continuous Drain Current (Note 5) VGS = 10V Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH VDS Spike Value 60 ±16 9.5 7.6 ID A 35 22 60 2 60 17 14.5 75 ID IDM IS ISM IAS EAS VSPIKE t = 10µs Unit V V A A A A A mJ V Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TC = +25°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 2.2 30 57 35 4.2 -55 to +150 PD RθJA RθJC TJ, TSTG Unit W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±10 V µA µA VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) — 11.7 15.7 0.7 2.5 16 22 1.2 V Static Drain-Source On-Resistance 0.5 — — — mΩ VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A VGS = 0V, IS = 1A — — — — — — — — — — — — — — 1103 251 20 1.5 8.9 18.9 3 2.8 4.1 7.1 19.5 8.6 21.2 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 13.2 V Test Condition VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 10A VGS = 10V, VDS = 30V, Rg = 6Ω, ID = 10A IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMT6015LFV Document number: DS38454 Rev. 5 - 2 2 of 7 www.diodes.com March 2018 © Diodes Incorporated DMT6015LFV 30 30 VDS = 5.0V VGS = 10V VGS = 4V ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.5V VGS = 3.5V 20 VGS = 3.0V 15 10 20 TA = 150°C 15 TA = 125°C T A = 25°C T A = 85°C 10 T A = -55°C 5 5 VGS = 2.5V 0.5 1 1.5 2 2.5 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0.017 VGS = 4.5V 0.015 0.014 0.013 VGS = 10V 0.012 0.011 0.01 0 5 10 15 20 25 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.5 2 2.5 3 3.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.1 I D = 10A 0.08 0.06 0.04 ID = 6A 0.02 0.024 0 0 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 20 1.8 VGS = 10V 0.022 VGS = 4.5V T A = 150°C 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.018 0.016 0 1 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25 T A = 125°C 0.018 T A = 85°C 0.016 0.014 T A = 25°C 0.012 0.01 T A = -55°C 0.008 0.006 0.004 0 5 10 15 20 25 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMT6015LFV Document number: DS38454 Rev. 5 - 2 30 3 of 7 www.diodes.com ID = 6A 1.6 1.4 VGS = 10V ID = 10A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature March 2018 © Diodes Incorporated VGS(th, )GATE , GATETHRESHOLD THRESHOLD VOLTAGE (V)(V) VOLTAGE VGS(TH) R D S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 2.2 0.03 0.025 2 1.8 VGS = 4.5V 0.02 I D = 1mA 1.6 ID = 6A I D = 250µA 1.4 0.015 VGS = 10V ID = 10A 1.2 0.01 1 0.8 -50 0.005 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 10000 30 C T, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 25 Ciss 1000 20 TA = 150°C 15 T A = 125°C T A = 85°C 10 TA = 25°C T A = -55°C 5 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current C oss 100 Crss 10 1 0 1.5 10 5 10 15 20 25 30 35 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 RDS(on) Limited PW = 100µs 8 6 ID, DRAIN CURRENT (A) SOURCE VOLTAGE GS, GATE VGSVGATE THRESHOLD VOLTAGE (V) (V) ADVANCE INFORMATION DMT6015LFV VDS = 30V ID = 10A 4 2 0 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ (m ax ) = 150°C PW = 10ms TC = 25°C PW = 1ms VGS = 10V Single Pulse DUT on 1 * MRP Board 0 4 8 12 16 Q g, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMT6015LFV Document number: DS38454 Rev. 5 - 2 20 0.010.1 4 of 7 www.diodes.com 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 March 2018 © Diodes Incorporated DMT6015LFV r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * R JA D = Single Pulse 0.001 0.0001 0.001 DMT6015LFV Document number: DS38454 Rev. 5 - 2 RJA = 126°C/W Duty Cycle, D = t1/ t2 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 March 2018 © Diodes Incorporated DMT6015LFV Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) D A D1 A1 PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm 0 E1 E c L E2 E2a k E2b D2 L b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) X3 8 Y2 X2 Y4 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 X1 Y1 Y3 Y 1 X DMT6015LFV Document number: DS38454 Rev. 5 - 2 C 6 of 7 www.diodes.com March 2018 © Diodes Incorporated DMT6015LFV ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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