NX3V1G384 Low-ohmic single-pole single-throw analog switch Rev. 04 — 24 March 2010 Product data sheet 1. General description The NX3V1G384 provides one single-pole single-throw analog switch function. It has two input/output terminals (Y and Z) and an active LOW enable input pin (E). When pin E is HIGH, the analog switch is turned off. Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 1.4 V to 4.3 V. The NX3V1G384 allows signals with amplitude up to VCC to be transmitted from Y to Z or from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal attenuation and distortion of transmitted signals. 2. Features Wide supply voltage range from 1.4 V to 4.3 V Very low ON resistance (peak): 0.8 Ω (typical) at VCC = 1.4 V 0.5 Ω (typical) at VCC = 1.65 V 0.3 Ω (typical) at VCC = 2.3 V 0.25 Ω (typical) at VCC = 2.7 V 0.25 Ω (typical) at VCC = 4.3 V High noise immunity ESD protection: HBM JESD22-A114F Class 3A exceeds 7500 V MM JESD22-A115-A exceeds 200 V CDM AEC-Q100-011 revision B exceeds 1000 V CMOS low-power consumption Latch-up performance exceeds 100 mA per JESD 78B Class II Level A Direct interface with TTL levels at 3.0 V Control input accepts voltages above supply voltage High current handling capability (500 mA continuous current under 3.3 V supply) Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Applications Cell phone PDA Portable media player NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3V1G384GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 NX3V1G384GM −40 °C to +125 °C XSON6 SOT886 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm 5. Marking Table 2. Marking codes[1] Type number Marking code NX3V1G384GW eL NX3V1G384GM eL [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram Y E Z Y Z E 001aag476 Fig 1. 001aai598 Logic symbol Fig 2. Logic diagram 7. Pinning information 7.1 Pinning NX3V1G384 NX3V1G384 Y 1 Z 2 GND 3 5 4 VCC E 6 VCC Z 2 5 n.c. GND 3 4 E 001aai612 Pin configuration SOT353-1 (TSSOP5) Fig 4. Pin configuration SOT886 (XSON6) NX3V1G384_4 Product data sheet 1 Transparent top view 001aai611 Fig 3. Y © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 2 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 7.2 Pin description Table 3. Pin description Symbol Pin Description SOT353-1 SOT886 Y 1 1 independent input or output Z 2 2 independent output or input GND 3 3 ground (0 V) E 4 4 enable input (active LOW) n.c. - 5 not connected VCC 5 6 supply voltage 8. Functional description Table 4. Function table[1] Input E Switch L ON H OFF [1] H = HIGH voltage level; L = LOW voltage level. 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VI input voltage Conditions enable input E Min Max Unit −0.5 +4.6 V [1] −0.5 +4.6 V [2] −0.5 VCC + 0.5 V VSW switch voltage IIK input clamping current VI < −0.5 V −50 - mA ISK switch clamping current VI < −0.5 V or VI > VCC + 0.5 V - ±50 mA ISW switch current VSW > −0.5 V or VSW < VCC + 0.5 V; source or sink current - ±500 mA VSW > −0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current - ±750 mA −65 +150 °C - 250 mW Tstg storage temperature Ptot total power dissipation Tamb = −40 °C to +125 °C [3] [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. [3] For TSSOP5 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 3 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC supply voltage VI input voltage Conditions enable input E [1] VSW switch voltage Tamb ambient temperature Δt/ΔV input transition rise and fall rate [2] VCC = 1.4 V to 3.6 V Min Typ Max Unit 1.4 - 4.3 V 0 - 4.3 V 0 - VCC V −40 - +125 °C - - 200 ns/V [1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit for the voltage drop across the switch. [2] Applies to control signal levels. 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter VIH VIL HIGH-level input voltage LOW-level input voltage Max Min VCC = 1.4 V to 1.95 V 0.65VCC - - 0.65VCC - - V VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - - V VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - - V VCC = 3.6 V to 4.3 V 0.7VCC - - 0.7VCC - - V VCC = 1.4 V to 1.95 V - - 0.35VCC - VCC = 2.3 V to 2.7 V - - 0.7 - 0.7 0.7 V VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 0.8 V VCC = 3.6 V to 4.3 V - - 0.3VCC - 0.3VCC - - - - ±0.5 ±1 μA VCC = 1.4 V to 3.6 V - - ±5 - ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA VCC = 1.4 V to 3.6 V - - ±5 - ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA - - ±100 - 690 6000 nA VCC = 3.6 V - - 100 - 690 6000 nA VCC = 4.3 V - - 150 - 800 7000 nA enable input E; VI = GND to 4.3 V; VCC = 1.4 V to 4.3 V IS(OFF) OFF-state leakage current Y port; see Figure 5; ON-state leakage current Z port; see Figure 6; supply current VI = VCC or GND; VSW = GND or VCC NX3V1G384_4 Product data sheet Unit Typ input leakage current ICC Tamb = −40 °C to +125 °C Min II IS(ON) Tamb = 25 °C Conditions Max Max (85 °C) (125 °C) 0.35VCC 0.35VCC V 0.3VCC V © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 4 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Tamb = 25 °C Conditions Tamb = −40 °C to +125 °C Min Typ Max Min Unit Max Max (85 °C) (125 °C) CI input capacitance - 1.0 - - - - pF CS(OFF) OFF-state capacitance - 70 - - - - pF CS(ON) ON-state capacitance - 205 - - - - pF 11.1 Test circuits VCC VCC E VIH Z VI E VIL Y IS IS GND VO Z Y GND VI 001aag479 001aag480 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 5. VO VI = 0.3 V or VCC − 0.3 V; VO = open circuit. Test circuit for measuring OFF-state leakage current Fig 6. Test circuit for measuring ON-state leakage current 11.2 ON resistance Table 8. Resistance RON At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14. Symbol RON(peak) Parameter ON resistance (peak) Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Conditions Min Typ[1] Max Min Max VCC = 1.4 V - 0.8 1.9 - 2.1 Ω VCC = 1.65 V - 0.5 0.8 - 0.9 Ω VCC = 2.3 V - 0.3 0.5 - 0.6 Ω VCC = 2.7 V - 0.25 0.45 - 0.5 Ω - 0.25 0.45 - 0.5 Ω VCC = 1.4 V - 0.5 1.7 - 1.8 Ω VCC = 1.65 V - 0.25 0.6 - 0.7 Ω VCC = 2.3 V - 0.1 0.2 - 0.2 Ω VCC = 2.7 V - 0.1 0.2 - 0.2 Ω VCC = 4.3 V - 0.1 0.25 - 0.25 Ω VI = GND to VCC; ISW = 100 mA; see Figure 7 VCC = 4.3 V RON(flat) ON resistance (flatness) VI = GND to VCC; ISW = 100 mA [2] NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 5 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch [1] Typical values are measured at Tamb = 25 °C. [2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. 11.3 ON resistance test circuit and graphs 001aah800 0.8 RON (Ω) 0.6 VSW (1) V 0.4 VCC (2) (3) E VIL (4) 0.2 Z Vl (5) (6) Y GND ISW 0 0 1 2 RON = VSW / ISW. 3 4 5 VI (V) 001aai599 (1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. (6) VCC = 4.3 V. Measured at Tamb = 25 °C. Fig 7. Test circuit for measuring ON resistance Fig 8. Typical ON resistance as a function of input voltage NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 6 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 001aah805 0.8 RON (Ω) 001aah801 0.6 RON (Ω) 0.6 0.4 (1) 0.4 (2) (1) (3) (2) 0.2 (3) 0.2 (4) (4) 0 0 0 1 2 3 0 1 2 (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 9. ON resistance as a function of input voltage; VCC = 1.5 V 001aah802 0.6 3 VI (V) VI (V) RON (Ω) Fig 10. ON resistance as a function of input voltage; VCC = 1.8 V 001aah803 0.6 RON (Ω) 0.4 0.4 (1) (1) (2) (2) (3) 0.2 (3) 0.2 (4) 0 (4) 0 0 1 2 3 0 VI (V) 2 3 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 11. ON resistance as a function of input voltage; VCC = 2.5 V Fig 12. ON resistance as a function of input voltage; VCC = 2.7 V NX3V1G384_4 Product data sheet 1 © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 7 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 001aah804 0.6 RON (Ω) 001aaj895 0.6 RON (Ω) 0.4 0.4 (1) (2) (3) (4) (1) (2) (3) 0.2 0.2 (4) 0 0 0 1 2 3 4 0 1 2 3 4 VI (V) 5 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 13. ON resistance as a function of input voltage; VCC = 3.3 V Fig 14. ON resistance as a function of input voltage; VCC = 4.3 V 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit Figure 16. Symbol Parameter ten enable time tdis [1] disable time 25 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min VCC = 1.4 V to 1.6 V - 28 43 - 46 50 ns VCC = 1.65 V to 1.95 V - 23 36 - 39 43 ns VCC = 2.3 V to 2.7 V - 18 28 - 30 32 ns VCC = 2.7 V to 3.6 V - 15 26 - 27 29 ns VCC = 3.6 V to 4.3 V - 15 26 - 27 29 ns VCC = 1.4 V to 1.6 V - 12 23 - 24 26 ns VCC = 1.65 V to 1.95 V - 9 16 - 18 19 ns VCC = 2.3 V to 2.7 V - 6 11 - 12 13 ns VCC = 2.7 V to 3.6 V - 5 10 - 11 12 ns VCC = 3.6 V to 4.3 V - 5 10 - 11 12 ns Max Max (85 °C) (125 °C) E to Z or Y; see Figure 15 E to Z or Y; see Figure 15 Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively. NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 8 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 12.1 Waveform and test circuits VI VM E input VM GND ten tdis VOH Y or Z output LOW to OFF OFF to LOW VX VX GND switch disabled switch enabled switch disabled 001aai600 Measurement points are given in Table 10. Logic level: VOH is the typical output voltage that occurs with the output load. Fig 15. Enable and disable times. Table 10. Measurement points Supply voltage Input Output VCC VM VX 1.4 V to 4.3 V 0.5VCC 0.9VOH VCC E Y/Z G V I V VO RL Z/Y VEXT = 1.5 V CL 001aai601 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 16. Load circuit for switching times Table 11. Test data Supply voltage Input Load VCC VI tr, tf CL RL 1.4 V to 4.3 V VCC ≤ 2.5 ns 35 pF 50 Ω NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 9 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns. 25 °C Symbol Parameter Conditions THD fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 17 total harmonic distortion Min Typ Max VCC = 1.4 V; VI = 1 V (p-p) - 0.05 - % VCC = 1.65 V; VI = 1.2 V (p-p) - 0.03 - % VCC = 2.3 V; VI = 1.5 V (p-p) - 0.01 - % VCC = 2.7 V; VI = 2 V (p-p) - 0.01 - % - 0.01 - % - 25 - MHz - −90 - dB VCC = 1.4 V to 3.6 V - 0.3 - V VCC = 3.6 V to 4.3 V - 0.5 - V VCC = 1.5 V - 6.5 - pC VCC = 1.8 V - 6.5 - pC VCC = 2.5 V - 6.5 - pC VCC = 3.3 V - 6.5 - pC VCC = 4.3 V - 12 - pC [1] VCC = 4.3 V; VI = 2 V (p-p) f(−3dB) −3 dB frequency response RL = 50 Ω; see Figure 18 αiso isolation (OFF-state) fi = 100 kHz; RL = 50 Ω; see Figure 19 [1] VCC = 1.4 V to 4.3 V [1] VCC = 1.4 V to 4.3 V Vct crosstalk voltage Qinj [1] charge injection Unit between digital inputs and switch; fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 20 fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V; Rgen = 0 Ω; see Figure 21 fi is biased at 0.5VCC. 12.3 Test circuits VCC 0.5VCC E VIL RL Y/Z Z/Y fi D 001aai602 Fig 17. Test circuit for measuring total harmonic distortion NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 10 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch VCC 0.5VCC E VIL RL Y/Z Z/Y fi dB 001aai603 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB. Fig 18. Test circuit for measuring the frequency response when channel is in ON-state VCC 0.5VCC RL 0.5VCC E VIH RL Y/Z Z/Y fi dB 001aai604 Adjust fi voltage to obtain 0 dBm level at input. Fig 19. Test circuit for measuring isolation (OFF-state) VCC E Y/Z G VI Z/Y RL RL 0.5VCC 0.5VCC CL V VO 001aai605 a. Test circuit logic input (E) off on off Vct VO 001aai606 b. input and output pulse definitions Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 11 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch VCC E Y/Z G VI V RL VO Z/Y Rgen Vgen CL GND 001aai607 a. Test circuit. logic input (E) off on off VO VO 001aai608 b. Input and output pulse definitions. Definition: Qinj = ΔVO × CL. ΔVO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 21. Test circuit for measuring charge injection NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 12 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm E D SOT353-1 A X c y HE v M A Z 5 4 A2 A (A3) A1 θ 1 Lp 3 L e w M bp detail X e1 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 0 1.0 0.8 0.15 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 1.3 2.25 2.0 0.425 0.46 0.21 0.3 0.1 0.1 0.60 0.15 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC JEITA MO-203 SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 22. Package outline SOT353-1 (TSSOP5) NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 13 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 e1 4 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 23. Package outline SOT886 (XSON6) NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 14 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model PDA Personal Digital Assistant TTL Transistor-Transistor Logic 15. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3V1G384_4 20100324 Product data sheet - NX3V1G384_3 NX3V1G384_3 20100208 Product data sheet - NX3V1G384_2 Modifications: • • Figure 5: Test circuit drawing has changed. Table 8: ON resistance (flatness) changed at VCC = 4.3 V. NX3V1G384_2 20090414 Product data sheet - NX3V1G384_1 NX3V1G384_1 20080918 Product data sheet - - NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 15 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 16 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NX3V1G384_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 24 March 2010 17 of 18 NX3V1G384 NXP Semiconductors Low-ohmic single-pole single-throw analog switch 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ON resistance test circuit and graphs. . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveform and test circuits . . . . . . . . . . . . . . . . 9 Additional dynamic characteristics . . . . . . . . . 10 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 March 2010 Document identifier: NX3V1G384_4