AOSMD AON7788 30v n-channel mosfet Datasheet

AON7788
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
TM
SRFET AON7788 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
30V
40A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.5mΩ
RDS(ON) (at VGS = 4.5V)
< 5.3mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Bottom View
Top View
D
Top View
TM
1
8
2
7
3
6
4
5
SRFET
Soft Recovery MOSFET:
Integrated Schottky Diode
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Rev 0 : Jan 2011
35
A
EAS, EAR
61
mJ
36
Steady-State
Steady-State
W
14
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
IAS, IAR
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
20
16
PD
TA=25°C
A
150
IDSM
TA=70°C
V
31
IDM
TA=25°C
Continuous Drain
Current
Avalanche Current
C
Units
V
40
ID
TC=100°C
Pulsed Drain Current
Maximum
30
±12
°C
-55 to 150
Typ
30
60
2.8
Max
40
75
3.4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7788
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
On state drain current
VGS=10V, VDS=5V
150
TJ=125°C
100
6.6
VGS=4.5V, ID=20A
4.2
5.3
VDS=5V, ID=20A
115
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
V
A
5.5
TJ=125°C
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
nA
2
4.5
gFS
Output Capacitance
1.6
3.7
Static Drain-Source On-Resistance
mA
100
VGS=10V, ID=20A
RDS(ON)
Units
V
0.5
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
0.4
mΩ
mΩ
S
0.7
V
40
A
2730
3415
4100
pF
240
340
440
pF
140
232
325
pF
0.6
1.2
1.8
Ω
19
24
29
nC
VGS=10V, VDS=15V, ID=20A
6.6
nC
Qgd
Gate Drain Charge
10
nC
9
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.5
ns
47
ns
5.5
ns
8
10
12
12
15
18
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Jan 2011
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Page 2 of 7
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
4.5V
60
3V
ID(A)
ID (A)
60
40
40
VGS=2.5V
125°C
20
20
0
0
1
2
3
4
25°C
0
1.5
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3.0
Normalized On-Resistance
2
4.5
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5.0
VGS=4.5V
4.0
VGS=10V
3.5
3.0
1.8
VGS=10V
ID=20A
1.6
17
5
VGS=4.5V 2
10
ID=20A
1.4
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
10
ID=20A
1.0E+01
40
8
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ)
2.0
125°C
6
25°C
1.0E-01
1.0E-02
1.0E-03
4
1.0E-04
25°C
2
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Jan 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
10
VDS=15V
ID=20A
4000
Ciss
3500
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2500
2000
1500
1000
2
Crss
Coss
500
0
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
60
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
RDS(ON)
limited
10.0
DC
100µs
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
160
10µs
Power (W)
10µs
100.0
ID (Amps)
5
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18 Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
RθJC=3.4°C/W
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Jan 2011
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Page 4 of 7
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
100
TA=100°C
TA=150°C
25
20
15
10
5
TA=125°C
0
10
1
10
100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
1000
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
50
TA=25°C
40
1000
30
Power (W)
Current rating ID(A)
30
20
17
5
2
10
100
10
10
0
0
ZθJA Normalized Transient
Thermal Resistance
10
1
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.00001
150
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0
Pulse
0.001
0.1 Width (s) 10 18
1000
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Jan 2011
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Page 5 of 7
AON7788
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
1.0E-02
0.6
VDS=30V
0.5
VSD (V)
IR (A)
1.0E-03
VDS=15V
1.0E-04
10A
0.4
5A
0.3
1.0E-05
IS=1A
0.2
0.1
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
12
25
di/dt=800A/µs
20
10
10
8
8
10
Irm
5
6
4
di/dt=800A/µs
5
4
4
25ºC
2
2
0
0
10
15
20
25
30
10
15
6
25ºC
Qrr
10
4
125ºC
0
200
400
600
800
0
1000
0
5
10
15
20
25
30
18
5
trr
4.5
Is=20A
4
125ºC
3.5
25ºC
3
9
2.5
2
25ºC
1.5
1
S
3
0.5
125ºC
0
0
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 0 : Jan 2011
0.5
25ºC
12
2
Irm
0
1
6
25ºC
5
1.5
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
trr (ns)
125ºC
2.5
125ºC
S
15
8
Irm (A)
Qrr (nC)
20
25ºC
2
0
Is=20A
3
trr
IS (A)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
25
3.5
125ºC
6
125ºC
0
0
trr (ns)
25ºC
Irm (A)
Qrr
50
75
100 125 150 175 200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
12
125ºC
15
25
S
0
S
1.0E-06
Qrr (nC)
20A
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200
400
600
0
1000
800
di/dt (A/µs)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON7788
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0 : Jan 2011
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 7 of 7
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