AON7788 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON7788 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 40A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.5mΩ RDS(ON) (at VGS = 4.5V) < 5.3mΩ 100% UIS Tested 100% Rg Tested DFN 3x3_EP Bottom View Top View D Top View TM 1 8 2 7 3 6 4 5 SRFET Soft Recovery MOSFET: Integrated Schottky Diode G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Rev 0 : Jan 2011 35 A EAS, EAR 61 mJ 36 Steady-State Steady-State W 14 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A IAS, IAR PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case 20 16 PD TA=25°C A 150 IDSM TA=70°C V 31 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 40 ID TC=100°C Pulsed Drain Current Maximum 30 ±12 °C -55 to 150 Typ 30 60 2.8 Max 40 75 3.4 Units °C/W °C/W °C/W Page 1 of 7 AON7788 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 On state drain current VGS=10V, VDS=5V 150 TJ=125°C 100 6.6 VGS=4.5V, ID=20A 4.2 5.3 VDS=5V, ID=20A 115 Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge V A 5.5 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz nA 2 4.5 gFS Output Capacitance 1.6 3.7 Static Drain-Source On-Resistance mA 100 VGS=10V, ID=20A RDS(ON) Units V 0.5 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 0.4 mΩ mΩ S 0.7 V 40 A 2730 3415 4100 pF 240 340 440 pF 140 232 325 pF 0.6 1.2 1.8 Ω 19 24 29 nC VGS=10V, VDS=15V, ID=20A 6.6 nC Qgd Gate Drain Charge 10 nC 9 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.5 ns 47 ns 5.5 ns 8 10 12 12 15 18 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Jan 2011 www.aosmd.com Page 2 of 7 AON7788 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 80 4.5V 60 3V ID(A) ID (A) 60 40 40 VGS=2.5V 125°C 20 20 0 0 1 2 3 4 25°C 0 1.5 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3.0 Normalized On-Resistance 2 4.5 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5.0 VGS=4.5V 4.0 VGS=10V 3.5 3.0 1.8 VGS=10V ID=20A 1.6 17 5 VGS=4.5V 2 10 ID=20A 1.4 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 10 ID=20A 1.0E+01 40 8 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 2.0 125°C 6 25°C 1.0E-01 1.0E-02 1.0E-03 4 1.0E-04 25°C 2 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Jan 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7788 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4500 10 VDS=15V ID=20A 4000 Ciss 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 2500 2000 1500 1000 2 Crss Coss 500 0 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 60 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 RDS(ON) limited 10.0 DC 100µs 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 160 10µs Power (W) 10µs 100.0 ID (Amps) 5 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Junction-toFigure 10: Single Pulse Power Rating Case (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 RθJC=3.4°C/W 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Jan 2011 www.aosmd.com Page 4 of 7 AON7788 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C 100 TA=100°C TA=150°C 25 20 15 10 5 TA=125°C 0 10 1 10 100 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 1000 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 50 TA=25°C 40 1000 30 Power (W) Current rating ID(A) 30 20 17 5 2 10 100 10 10 0 0 ZθJA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 1 0.00001 150 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0 Pulse 0.001 0.1 Width (s) 10 18 1000 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Jan 2011 www.aosmd.com Page 5 of 7 AON7788 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 1.0E-02 0.6 VDS=30V 0.5 VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 10A 0.4 5A 0.3 1.0E-05 IS=1A 0.2 0.1 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 12 25 di/dt=800A/µs 20 10 10 8 8 10 Irm 5 6 4 di/dt=800A/µs 5 4 4 25ºC 2 2 0 0 10 15 20 25 30 10 15 6 25ºC Qrr 10 4 125ºC 0 200 400 600 800 0 1000 0 5 10 15 20 25 30 18 5 trr 4.5 Is=20A 4 125ºC 3.5 25ºC 3 9 2.5 2 25ºC 1.5 1 S 3 0.5 125ºC 0 0 di/dt (A/µs) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0 : Jan 2011 0.5 25ºC 12 2 Irm 0 1 6 25ºC 5 1.5 IS (A) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current trr (ns) 125ºC 2.5 125ºC S 15 8 Irm (A) Qrr (nC) 20 25ºC 2 0 Is=20A 3 trr IS (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 3.5 125ºC 6 125ºC 0 0 trr (ns) 25ºC Irm (A) Qrr 50 75 100 125 150 175 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 12 125ºC 15 25 S 0 S 1.0E-06 Qrr (nC) 20A www.aosmd.com 200 400 600 0 1000 800 di/dt (A/µs) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON7788 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0 : Jan 2011 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7