N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description Features The MDP7N50 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP7N50 is suitable device for SMPS, HID and general purpose applications. VDS = 500V ID = 7.0A @VGS = 10V RDS(ON) < 0.9Ω @VGS = 10V Applications Power Supply HID Lighting o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V o TC=25 C Continuous Drain Current Pulsed Drain Current 7.0 A 4.2 A 28 A 114 0.91 W o W/ C 4.5 V/ns EAS 270 mJ TJ, Tstg -55~150 ID o TC=100 C (1) IDM o TC=25 C Power Dissipation Peak Diode Recovery dv/dt PD o Derate above 25 C (3) Dv/dt (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range o C Thermal Characteristics Characteristics (1) Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Dec2009. Version 1.1 1 Symbol Rating RθJA 62.5 RθJC 1.1 Unit o C/W MagnaChip Semiconductor Ltd. MDP7N50 N-channel MOSFET 500V MDP7N50 Part Number Temp. Range Package Packing TO-220 Tube o MDP7N50 -55~150 C o Electrical Characteristics (Ta =25 C) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol Test Condition Min Typ Max Unit BVDSS ID = 250µA, VGS = 0V 500 - - VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge RDS(ON) VGS = 10V, ID = 3.5A gfs VDS = 30V, ID = 3.5A Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time (3) VDS = 400V, ID = 7.0A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz 0.76 0.9 Ω - 7 - S - 17.5 - 5 - 6.5 - 740 - 3.7 Coss - 95.5 td(on) - tr td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to IS Source Diode Forward Current Source-Drain Diode Forward VSD Voltage Body Diode Reverse Recovery trr Time Body Diode Reverse Recovery Qrr Charge VGS = 10V, VDS = 250V, ID = 7.0A, (3) RG = 25Ω IS = 7.0A, VGS = 0V nC pF 16.8 - 29.8 - 36.4 - 23.6 - 7.0 (3) V ns - A 1.4 V - 260 ns - 1.7 µC IF = 7.0A, dl/dt = 100A/µs Note : 1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10mH, IAS=7.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C Dec2009. Version 1.1 2 MagnaChip Semiconductor Ltd. MDP7N50 N-channel MOSFET 500V Ordering Information Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V ID,Drain Current [A] 16 14 1.50 RDS(ON) [Ω ] 18 12 10 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 8 6 1.25 1.00 VGS=10.0V VGS=20V 0.75 4 2 0.50 0 0 2 4 6 8 10 12 14 16 18 0 20 5 10 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 1.8 ※ Notes : 1. VGS = 10 V 2. ID = 5 A 1.6 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID,Drain Current [A] VDS,Drain-Source Voltage [V] 1.4 VGS=10V 1.2 VGS=4.5V 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 150 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 100 * Notes ; 1. VDS=30V IDR Reverse Drain Current [A] ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ ID [A] 10 150℃ -55℃ 10 150℃ 25℃ 1 25℃ 1 4 5 6 7 8 9 0.1 0.0 10 Fig.5 Transfer Characteristics Dec2009. Version 1.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] VGS [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP7N50 N-channel MOSFET 500V 1.75 20 MDP7N50 N-channel MOSFET 500V 1600 10 ※ Note : ID = 7.0A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1400 Coss 100V VGS, Gate-Source Voltage [V] 250V 8 1200 Capacitance [pF] 400V 6 4 1000 Ciss 800 600 400 2 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 0 2 4 6 8 10 12 14 16 18 0 0.1 20 1 2 10 1 Fig.8 Capacitance Characteristics 8 100 µs 10 µs Operation in This Area is Limited by R DS(on) 6 1 ms ID, Drain Current [A] ID, Drain Current [A] Fig.7 Gate Charge Characteristics 10 10 ms 10 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 100 ms DC 0 -1 4 2 Single Pulse TJ=Max rated TC=25℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 VDS, Drain-Source Voltage [V] 75 100 125 Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 14000 single Pulse RthJC = 1.1℃/W TC = 25℃ 0 10 10000 Power (W) Zθ JC(t), Thermal Response 12000 D=0.5 0.2 0.1 -1 10 150 TC, Case Temperature [℃] 0.05 0.02 0.01 6000 4000 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=1.1℃/W single pulse 8000 2000 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec2009. Version 1.1 1E-4 4 MagnaChip Semiconductor Ltd. MDP7N50 N-channel MOSFET 500V Physical Dimension TO220, 3L Dimensions are in millimeters, unless otherwise specified Dec2009. Version 1.1 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec2009. Version 1.1 6 MagnaChip Semiconductor Ltd. MDP7N50 N-channel MOSFET 500V Worldwide Sales Support Locations