1/2 GM8050 N P N E P I TA X I A L T R A N S I S T O R Description The GM8050 is designed for general purpose amplifier applications. Package Dimensions A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6 V Collector Current IC 1.5 A IB Base Current IB 0.5 A Total Power Dissipation PD 1 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 40 - - V IC=100uA BVCEO 25 - - V IC=2mA BVEBO 6 - - V IE=100uA ICBO - - 100 nA VCB=35V IEBO - - 100 nA VEB=6V VCE(sat) - - 0.5 V IC=0.8A, IB=80mA 1.2 V IC=0.8A, IB=80mA V VBE(sat) VBE(on) Test Conditions - - 1 Hfe1 45 - - VCE=1V, IC=10mA Hfe2 120 - 500 VCE=1V, IC=100mA Hfe3 40 - - VCE=1V, IC=800mA fT 100 - - VCE=1V, IC=5mA MHz Classification Of hFE Rank C D E hFE 120-200 160 - 300 250 - 500 VCE=10V, IC=50mA 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165