ETL GM8050 N p n e p i t a x i a l t r a n s i s t o r Datasheet

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GM8050
N P N E P I TA X I A L T R A N S I S T O R
Description
The GM8050 is designed for general purpose amplifier applications.
Package Dimensions
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
IB Base Current
IB
0.5
A
Total Power Dissipation
PD
1
W
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
40
-
-
V
IC=100uA
BVCEO
25
-
-
V
IC=2mA
BVEBO
6
-
-
V
IE=100uA
ICBO
-
-
100
nA
VCB=35V
IEBO
-
-
100
nA
VEB=6V
VCE(sat)
-
-
0.5
V
IC=0.8A, IB=80mA
1.2
V
IC=0.8A, IB=80mA
V
VBE(sat)
VBE(on)
Test Conditions
-
-
1
Hfe1
45
-
-
VCE=1V, IC=10mA
Hfe2
120
-
500
VCE=1V, IC=100mA
Hfe3
40
-
-
VCE=1V, IC=800mA
fT
100
-
-
VCE=1V, IC=5mA
MHz
Classification Of hFE
Rank
C
D
E
hFE
120-200
160 - 300
250 - 500
VCE=10V, IC=50mA
2/2
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165
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