Vishay BZM55B10 Silicon epitaxial planar z-diode Datasheet

BZM55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
Saving space
D
D
D
D
D
D
Very sharp reverse characteristic
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55B... / TZMB...
96 12315
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
VZ–tolerance ± 2%
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
RthJA 300K/W
Type
x
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35mm copper clad, 0.9 mm2 copper area per electrode
Symbol
RthJA
RthJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Document Number 85597
Rev. 3, 01-Apr-99
Test Conditions
IF=200mA
Type
Symbol
VF
Min
Typ
Max
1.5
Unit
V
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BZM55B...
Vishay Telefunken
Type
BZM55B...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
VZnom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
IZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for
VZT and
V
2.35 to 2.45
2.64 to 2.76
2.94 to 3.06
3.24 to 3.36
3.52 to 3.68
3.82 to 3.98
4.22 to 4.38
4.60 to 4.80
5.00 to 5.20
5.48 to 5.72
6.08 to 6.32
6.66 to 6.94
7.35 to 7.65
8.04 to 8.36
8.92 to 9.28
9.80 to 10.20
10.78 to 11.22
11.76 to 12.24
12.74 to 13.26
14.70 to 15.30
15.70 to 16.30
17.64 to 18.36
19.60 to 20.40
21.55 to 22.45
23.5 to 24.5
26.4 to 27.6
29.4 to 30.6
32.4 to 33.6
35.3 to 36.7
38.2 to 39.8
42.1 to 43.9
46.1 to 47.9
50.0 to 52.0
54.9 to 57.1
60.8 to 63.2
66.6 to 69.4
73.5 to 76.5
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rzjT
W
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
rzjk at
W
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
IZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
IR and IR at
mA mA 2)
< 100 < 50
< 10 < 50
<4
< 40
<2
< 40
<2
< 40
<2
< 40
<1
< 20
< 0.5 < 10
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<5
< 0.1
<5
< 0.1
<5
< 0.1 < 10
< 0.1 < 10
< 0.1 < 10
< 0.1 < 10
< 0.1 < 10
VR
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TKVZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
Document Number 85597
Rev. 3, 01-Apr-99
BZM55B...
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
200
C D – Diode Capacitance ( pF )
Ptot – Total Power Dissipation ( mW )
600
500
400
300
200
100
150
VR = 2V
Tj = 25°C
100
50
0
0
0
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
95 9602
0
25
20
1.3
VZtn=VZt/VZ(25°C)
VZtn – Relative Voltage Change
Tj = 25°C
100
IZ=5mA
10
DVZ
– Voltage Change ( mV )
15
Diode Capacitance vs. Z–Voltage
1000
1.2
0
5
10
15
20
10–4/K
8
6
10–4/K
10–4/K
4
2
10–4/K
10–4/K
0
–2 10–4/K
1.0
–4
10–4/K
0.9
0.8
–60
25
0
60
120
180
240
Tj – Junction Temperature ( °C )
95 9599
VZ – Z-Voltage ( V )
95 9598
TKVZ=10
1.1
1
Typical Change of Working Voltage vs.
Junction Temperature
Typical Change of Working Voltage
under Operating Conditions at Tamb=25°C
TK VZ – Temperature Coefficient of VZ ( 10 –4 /K )
10
VZ – Z-Voltage ( V )
Total Power Dissipation vs.
Ambient Temperature
100
IF – Forward Current ( mA )
15
10
5
IZ=5mA
0
10
Tj = 25°C
1
0.1
0.01
0.001
–5
0
95 9600
5
95 9601
10
20
30
40
VZ – Z-Voltage ( V )
Temperature Coefficient of Vz vs. Z–Voltage
Document Number 85597
Rev. 3, 01-Apr-99
0
50
95 9605
0.2
0.4
0.6
0.8
1.0
VF – Forward Voltage ( V )
Forward Current vs. Forward Voltage
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BZM55B...
Vishay Telefunken
1000
r Z – Differential Z-Resistance ( W )
100
IZ – Z-Current ( mA )
80
Ptot=500mW
Tamb=25°C
60
40
20
IZ=1mA
100
5mA
10 10mA
Tj = 25°C
1
0
0
4
8
12
16
20
0
VZ – Z-Voltage ( V )
95 9604
5
10
Z–Current vs. Z–Voltage
15
20
25
VZ – Z-Voltage ( V )
95 9606
Differential Z–Resistance vs. Z–Voltage
50
Ptot=500mW
Tamb=25°C
IZ – Z-Current ( mA )
40
30
20
10
0
15
20
25
30
35
VZ – Z-Voltage ( V )
95 9607
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Z–Current vs. Z–Voltage
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse
RthJA=300K/W
DT=Tjmax–Tamb
10
tp/T=0.01
tp/T=0.1
tp/T=0.02
iZM=(–VZ+(VZ2+4rzj
tp/T=0.05
1
10–1
100
101
DT/Zthp)1/2)/(2rzj)
102
tp – Pulse Length ( ms )
95 9603
Thermal Response
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Document Number 85597
Rev. 3, 01-Apr-99
BZM55B...
Vishay Telefunken
0.71
1.3
Wave Soldering
1.27
95 10331
1.4
0.152
9.9
0.355
25
0.7
1.4
0.7
2.8
Recommended foot pads (in mm)
10
2.5
24
95 10329
Board for RthJA definition (in mm)
Reflow Soldering
95 10330
1.2
0.6
1.2
0.6
2.4
Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85597
Rev. 3, 01-Apr-99
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BZM55B...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85597
Rev. 3, 01-Apr-99
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