FDS6670S 30V N-Channel PowerTrench SyncFET ™ General Description Features The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • 13.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (24nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching Applications • • DC/DC converter High power and current handling capability • Motor drives D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 T A =25 oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 13.5 A – Continuous (Note 1a) – Pulsed PD 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1 –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 50 °C/W (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670S FDS6670S 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6670S Rev E (W) FDS6670S August 2001 Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, IGSSF Gate–Body Leakage, Forward VGS = 20 V, IGSSR Gate–Body Leakage, Reverse VGS = –20 V, On Characteristics 30 V 24 VGS = 0 V mV/°C 500 VDS = 0 V VDS = 0 V µA 100 nA –100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 1 mA, Referenced to 25°C 1 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 13.5 A 2.2 –6.2 VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 11.2 A VGS=10 V, ID =13.5A, TJ=100°C 7 9.5 9 mV/°C 9 12.5 12.5 50 mΩ A 45 S 2674 pF 751 pF 254 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) VDS = 15 V, f = 1.0 MHz V GS = 0 V, (Note 2) 11 20 ns 10 20 ns Turn–Off Delay Time 44 70 ns tf Turn–Off Fall Time 23 37 ns Qg Total Gate Charge 24 34 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 13.5 A, 7.3 nC 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage Diode Reverse Recovery Time trr Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 13.5A, diF/dt = 300 A/µs (Note 2) (Note 2) (Note 3) 0.4 0.5 26.8 47.2 3.5 A 0.7 V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. FDS6670S Rev E (W) FDS6670S Electrical Characteristics Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. FDS6670S Rev E (W) FDS6670S Typical Characteristics 2.6 50 VGS = 10V 4.0V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 40 I D, DRAIN CURRENT (A) 4.5V 3.5V 30 20 3.0V 10 0 0 0.5 1 1.5 2.2 VGS = 3.5V 1.8 4.0V 4.5V 1.4 6.0V 10V 1 0.6 2 0 VD S, DRAIN-SOURCE VOLTAGE (V) RDS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 50 0.025 ID = 13.5A VGS = 10V 1.4 1.2 1 0.8 0.6 0 25 50 75 ID = 6.8A 0.02 0.015 o TA = 125 C 0.01 o T A = 25 C 0.005 100 2 o 4 T J, JUNCTION TEMPERATURE ( C) 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 70 o o T A = -55 C 25 C I S, REVERSE DRAIN CURRENT (A) VDS = 5V 60 o I D, DRAIN CURRENT (A) 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 -25 20 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. -50 10 125 C 50 40 30 20 10 VGS = 0V o 1 TA = 125 C o 25 C 0.1 o -55 C 0.01 0.001 0 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6670S Rev E (W) (continued) 10 3600 ID =13.5A VD S = 5V 10V f = 1MHz VGS = 0 V 3000 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS6670S Typical Characteristics 15V 6 4 C ISS 2400 1800 1200 2 C OSS 600 CRSS 0 0 0 5 10 15 20 25 30 35 40 45 0 5 Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 P(pk), PEAK TRANSIENT POWER (W) 50 100µs 1ms 10ms 100ms 1s RDS(ON) LIMIT 10 10s 1 DC VGS = 10V SINGLE PULSE o R θJA = 125 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125°C/W T A = 25°C 40 30 20 10 0 0.001 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 ID , DRAIN CURRENT (A) 10 VD S, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6670S Rev E (W) FDS6670S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 Current: 0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6670S. o 100 C 0.01 0.001 o 25 C 0.0001 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) Time: 10.0ns/div Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6670S SyncFET body diode reverse recovery characteristic. Current: 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6670A). Time: 10.0ns/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. FDS6670S Rev E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4