Sanyo EC4402C Small signal switch and interface application Datasheet

EC4402C
Ordering number : EN7037A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EC4402C
Small Signal Switch and Interface
Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
50
Gate-to-Source Voltage
VGSS
±10
V
ID
0.1
A
Drain Current (DC)
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
PW≤10µs, duty cycle≤1%
V
0.4
A
0.15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=50V, VGS=0V
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=50mA
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
Input Capacitance
RDS(on)3
Ciss
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
Cutoff Voltage
V(BR)DSS
Conditions
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Ratings
min
typ
Unit
max
50
V
0.4
0.13
1
µA
±10
µA
1.3
0.18
V
S
6
7.8
Ω
7.1
9.9
Ω
10
20
Ω
6.6
pF
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
4.7
pF
1.7
pF
18
ns
See specified Test Circuit.
42
ns
See specified Test Circuit.
190
ns
See specified Test Circuit.
105
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 42006PE MS IM TB-00002219 / 81001 TS IM TA-3332 No.7037-1/5
EC4402C
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
nC
Qgs
VDS=10V, VGS=10V, ID=100mA
VDS=10V, VGS=10V, ID=100mA
1.57
Gate-to-Source Charge
0.20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=100mA
0.32
Diode Forward Voltage
VSD
IS=100mA, VGS=0V
Package Dimensions
nC
0.9
1.2
V
Type No. Indication
unit : mm
7036-001
Top View
U
0.8
3
4
1.0
Top view
2
1
0.6
Polarity Discriminating Mark
0.5
0.3
0.2
2
4
3
0.6
1
Bottom View
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1008-4
Electrical Connection
Switching Time Test Circuit
Polarity mark (Top)
VDD=25V
Gate
4V
0V
Drain
VIN
Source
ID=50mA
RL=500Ω
VIN
*Electrodes : on the bottom
Top view
Polarity mark (Top)
Drain
VOUT
D
PW=10µs
D.C.≤1%
G
P.G
50Ω
S
EC4402C
Gate
Source
No.7037-2/5
EC4402C
ID -- VDS
VDS=10V
0.05
0.04
0.03
Ta=
--
75°
C
0.08
0.06
0.04
0.02
25
°C
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
10
9
50mA
ID=30mA
6
5
4
3
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
2
Ta=75°C
25°C
--25°C
7
5
3
2
1.0
0.01
2
3
5
7
2
0.1
Drain Current, ID -- A
=3
ID
0V
VG
A,
4.
S=
m
50
I D=
6
4
2
0
--60
--40
--20
0
20
40
60
80
3
2
2
3
100
Ambient Temperature, Ta -- °C
120
140
5
7
0.1
160
IT00060
2
3
IT00057
RDS(on) -- ID
VGS=1.5V
5
3
2
Ta=75°C
25°C
--25°C
10
7
5
3
2
2
3
5
7
0.01
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
=2
V GS
0
8
5
yfs -- ID
1.0
.5V
,
mA
Ta=75°C
25°C
--25°C
7
IT00058
12
10
10
1.0
0.001
3
RDS(on) -- Ta
14
2
7
3
10
3
100
5
3.0
IT00055
VGS=4V
Drain Current, ID -- A
VGS=2.5V
7
2.5
RDS(on) -- ID
IT00056
RDS(on) -- ID
100
2.0
5
1.0
0.01
2
0
1.5
7
11
7
1.0
100
Ta=25°C
8
0.5
Gate-to-Source Voltage, VGS -- V
IT00054
RDS(on) -- VGS
12
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.10
0.01
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.12
0.02
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.14
Ta=
75°
C
°C
6.0
V
VGS=1.5V
--2
5
Drain Current, ID -- A
0.16
0.07
0.06
25°C
0.18
25°
C
5V
V
2.0
2.
4.0V
0.08
Drain Current, ID -- A
3 .0
3.5V
0.09
ID -- VGS
0.20
V
0.10
2
3
IT00059
VDS=10V
7
5
3
5 °C
2
Ta= --
2
75°C
0.1
25°C
7
5
3
2
0.01
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
IT00061
No.7037-3/5
EC4402C
IS -- VSD
3
SW Time -- ID
1000
VGS=0V
VDD=25V
VGS=4V
7
Switching Time, SW Time -- ns
0.1
C
--25
°
5
25°
C
5°C
7
Ta=
7
Source Current, IS -- A
2
3
2
0.01
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
7
2
10
Ciss
5
Coss
2
Crss
3
5
10
15
20
25
30
td(on)
2
2
3
5
7
10
0.1
IT00063
VGS -- Qg
VDS=10V
ID=100mA
8
7
6
5
4
3
2
1
1.0
0
tr
5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -- pF
3
3
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT00064
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
1.8
IT00065
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
tf
100
9
5
7
td(off)
2
IT00062
f=1MHz
7
3
10
0.01
1.1
Ciss, Coss, Crss -- VDS
100
5
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00236
No.7037-4/5
EC4402C
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
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This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.7037-5/5
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