EC4402C Ordering number : EN7037A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4402C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 Gate-to-Source Voltage VGSS ±10 V ID 0.1 A Drain Current (DC) Drain Current (Pulse) IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% V 0.4 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=50V, VGS=0V Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) yfs VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=50mA, VGS=4V ID=30mA, VGS=2.5V Input Capacitance RDS(on)3 Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz Cutoff Voltage V(BR)DSS Conditions Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Ratings min typ Unit max 50 V 0.4 0.13 1 µA ±10 µA 1.3 0.18 V S 6 7.8 Ω 7.1 9.9 Ω 10 20 Ω 6.6 pF VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. 4.7 pF 1.7 pF 18 ns See specified Test Circuit. 42 ns See specified Test Circuit. 190 ns See specified Test Circuit. 105 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 42006PE MS IM TB-00002219 / 81001 TS IM TA-3332 No.7037-1/5 EC4402C Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA 1.57 Gate-to-Source Charge 0.20 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.32 Diode Forward Voltage VSD IS=100mA, VGS=0V Package Dimensions nC 0.9 1.2 V Type No. Indication unit : mm 7036-001 Top View U 0.8 3 4 1.0 Top view 2 1 0.6 Polarity Discriminating Mark 0.5 0.3 0.2 2 4 3 0.6 1 Bottom View 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1008-4 Electrical Connection Switching Time Test Circuit Polarity mark (Top) VDD=25V Gate 4V 0V Drain VIN Source ID=50mA RL=500Ω VIN *Electrodes : on the bottom Top view Polarity mark (Top) Drain VOUT D PW=10µs D.C.≤1% G P.G 50Ω S EC4402C Gate Source No.7037-2/5 EC4402C ID -- VDS VDS=10V 0.05 0.04 0.03 Ta= -- 75° C 0.08 0.06 0.04 0.02 25 °C 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 9 50mA ID=30mA 6 5 4 3 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2 Ta=75°C 25°C --25°C 7 5 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A =3 ID 0V VG A, 4. S= m 50 I D= 6 4 2 0 --60 --40 --20 0 20 40 60 80 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 5 7 0.1 160 IT00060 2 3 IT00057 RDS(on) -- ID VGS=1.5V 5 3 2 Ta=75°C 25°C --25°C 10 7 5 3 2 2 3 5 7 0.01 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S =2 V GS 0 8 5 yfs -- ID 1.0 .5V , mA Ta=75°C 25°C --25°C 7 IT00058 12 10 10 1.0 0.001 3 RDS(on) -- Ta 14 2 7 3 10 3 100 5 3.0 IT00055 VGS=4V Drain Current, ID -- A VGS=2.5V 7 2.5 RDS(on) -- ID IT00056 RDS(on) -- ID 100 2.0 5 1.0 0.01 2 0 1.5 7 11 7 1.0 100 Ta=25°C 8 0.5 Gate-to-Source Voltage, VGS -- V IT00054 RDS(on) -- VGS 12 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.10 0.01 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.12 0.02 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.14 Ta= 75° C °C 6.0 V VGS=1.5V --2 5 Drain Current, ID -- A 0.16 0.07 0.06 25°C 0.18 25° C 5V V 2.0 2. 4.0V 0.08 Drain Current, ID -- A 3 .0 3.5V 0.09 ID -- VGS 0.20 V 0.10 2 3 IT00059 VDS=10V 7 5 3 5 °C 2 Ta= -- 2 75°C 0.1 25°C 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00061 No.7037-3/5 EC4402C IS -- VSD 3 SW Time -- ID 1000 VGS=0V VDD=25V VGS=4V 7 Switching Time, SW Time -- ns 0.1 C --25 ° 5 25° C 5°C 7 Ta= 7 Source Current, IS -- A 2 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 7 2 10 Ciss 5 Coss 2 Crss 3 5 10 15 20 25 30 td(on) 2 2 3 5 7 10 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 0 tr 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 3 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT00064 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 1.8 IT00065 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W tf 100 9 5 7 td(off) 2 IT00062 f=1MHz 7 3 10 0.01 1.1 Ciss, Coss, Crss -- VDS 100 5 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00236 No.7037-4/5 EC4402C This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.7037-5/5