Freescale MD7P19130HSR3 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MD7P19130H
Rev. 0, 5/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ = 1250 mA, Pout = 40 Watts Avg., Full Frequency Band, 3GPP Test
Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
• Pout @ 1 dB Compression Point w 130 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MD7P19130HR3
MD7P19130HSR3
1930 - 1990 MHz, 40 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465M - 01, STYLE 1
NI - 780 - 4
MD7P19130HR3
CASE 465H - 02, STYLE 1
NI - 780S - 4
MD7P19130HSR3
RFinA/VGSA 3
2 RFoutA/VDSA
RFinB/VGSB 4
1 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7P19130HR3 MD7P19130HSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 40 W CW
RθJC
Unit
°C/W
0.31
0.36
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 316 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.16 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.2
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
586
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
348
—
pF
Off Characteristics
(3)
On Characteristics (3)
Dynamic Characteristics (3,4)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg., f = 1932.5 MHz and f =
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.5
20
21.5
dB
Drain Efficiency
ηD
27
30
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
5.6
6
—
dB
ACPR
—
- 36
- 32.5
dBc
IRL
—
- 16
-7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Measurement made with device in single - ended configuration.
4. Part internally matched both on input and output.
(continued)
MD7P19130HR3 MD7P19130HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, 1930 - 1990 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
130
—
W
Gain Flatness in 60 MHz Bandwidth @ Pout = 40 W Avg.
GF
—
0.3
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 130 W CW
Φ
—
0.5
—
°
Delay
—
2.3
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 130 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
80
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
ΔP1dB
—
0.01
—
dBm/°C
Average Group Delay @ Pout = 130 W CW, f = 1960 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
3
VSUPPLY
B1
VBIAS
+
+
+
+
C7
C2
C1
C3
C4
R1
C8
C10
C11
C12
C6
Z14
Z11
Z7
RF
INPUT
Z8
Z9
Z10
Z13
Z15
Z16
Z2
Z3
Z4
Z5
Z18
Z12
Z19
Z1
Z17
Z6
Z20
Z21
Z22
Z23
Z24
Z25
Z26
RF
OUTPUT
DUT
C9
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
0.582″ x 0.110″ Microstrip
0.140″ x 0.284″ Microstrip
0.066″ x 0.080″ Microstrip
0.127″ x 0.080″ Microstrip
0.042″ x 0.237″ Microstrip
0.095″ x 0.375″ Microstrip
0.330″ x 0.320″ Microstrip
0.438″ x 0.530″ Microstrip
0.311″ x 0.741″ Microstrip
0.025″ x 0.814″ Microstrip
0.049″ x 0.254″ Microstrip
0.078″ x 0.814″ Microstrip
0.134″ x 0.957″ Microstrip
0.150″ x 0.276″ Microstrip
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26
PCB
0.203″ x 0.957″ Microstrip
0.271″ x 0.930″ Microstrip
0.010″ x 0.540″ Microstrip
0.042″ x 0.205″ Microstrip
0.471″ x 0.080″ Microstrip
0.024″ x 0.241″ Microstrip
0.057″ x 0.349″ Microstrip
0.781″ x 0.311″ Microstrip
0.271″ x 0.080″ Microstrip
0.024″ x 0.095″ Microstrip
0.134″ x 0.190″ Microstrip
0.511″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 2. MD7P19130HR3(HSR3) Test Circuit Schematic
Table 5. MD7P19130HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447 ROP50
Fair - Rite
C1
47 μF, 50 V Electrolytic Capacitor
476KXM063M
Illinois Cap.
C2
100 μF, 50 V Electrolitic Capacitor
T491C105K050AT
Kemet
C3
1.0 μF Chip Capacitor
ATC100B102JT50XT
ATC
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKYS
Kemet
C5, C9
11 pF Chip Capacitors
ATC100B110JT500XT
ATC
C6
13 pF Chip Capacitor
ATC100B130JT500XT
ATC
C7
8.2 pF Chip Capacitor
ATC100B8R2JT500XT
ATC
C8
22 μF, 35 V Tantalum Capacitor
T491C226K035AT
Kemet
C10
470 μF, 63 V Electrolytic Capacitor
477KXM063M
Illinois Cap.
C11
10 μF, 50 V Chip Capacitor
GRM55DR61H106KA88B
Murata
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MD7P19130HR3 MD7P19130HSR3
4
RF Device Data
Freescale Semiconductor
C2
C10
C7
C6
R1
C3 C4
B1
C12
C1
C11
C8
C5
CUT OUT AREA
C9
MD7P19130H/HS
Rev. 2
Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout
Single−ended
l
4
l
4
l
2
Quadrature combined
l
4
Doherty
l
2
Push−pull
Figure 4. Possible Circuit Topologies
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
5
38
ηD
35
32
21
20.5
Gps
20
29
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 1250 mA, Single−Carrier W−CDMA
26
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF)
19.5
−4
−30
−8
−32
19
18.5 ACPR
18
17.5
1880
−28
−34
−36
PARC
1900
IRL
1920
1940
1960
1980
2000
2020
−38
2040
−12
−16
−20
−24
0
−0.5
−1
−1.5
−2
PARC (dB)
Gps, POWER GAIN (dB)
21.5
IRL, INPUT RETURN LOSS (dB)
22
ACPR (dBc)
22.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−2.5
f, FREQUENCY (MHz)
Figure 5. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 40 Watts Avg.
21.5
IDQ = 1875 mA
Gps, POWER GAIN (dB)
20.5
1562.5 mA
19.5
1250 mA
18.5
937.5 mA
17.5
VDD = 28 Vdc, f = 1960 MHz
CW Measurements
625 mA
16.5
1
10
100
200
Pout, OUTPUT POWER (WATTS) CW
Figure 6. CW Power Gain versus Output Power
19
18.5
18
17.5
50
−20
45
−25
Gps
0
−1
−1 dB = 33.42 W
−2 dB = 49.63 W
40
−2
35
ACPR
ηD
−3
30
VDD = 28 Vdc, IDQ = 1250 mA
PARC
f = 1960 MHz, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF)
−4
−5
20
−3 dB = 69.20 W
30
40
50
60
70
80
90
100
110
−30
−35
ACPR (dBc)
19.5
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
20
1
ηD, DRAIN EFFICIENCY (%)
20.5
−40
25
−45
20
−50
120
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MD7P19130HR3 MD7P19130HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
23
50
−10
85°C
40
85°C
ηD
17 VDD = 28 Vdc, IDQ = 1250 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
15
PAR = 7.5 dB @ 0.01%
Probability (CCDF)
13
ACPR
30
−40°C
25°C
10
85°C
11
1
20
10
100
−20
−30
−40
ACPR (dBc)
Gps, POWER GAIN (dB)
25°C
25°C
19
0
ηD, DRAIN EFFICIENCY (%)
TC = −40°C
21
60
−40°C
Gps
−50
0
200
−60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
S21
−5
S21 (dB)
−15
12
S11
−20
8
VDD = 28 Vdc
IDQ = 1250 mA
4
1650
1750
1850
S11 (dB)
−10
16
MTTF (HOURS)
20
0
1550
109
0
24
108
107
−25
1950
2050
2150
2250
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
−30
2350
106
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 10. MTTF versus Junction Temperature
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 11. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 12. Single - Carrier W - CDMA Spectrum
MD7P19130HR3 MD7P19130HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zsource
f = 1880 MHz
f = 2040 MHz
f = 2040 MHz
Zload
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg.
f
MHz
Zsource
W
Zload
W
1880
7.37 + j1.00
1.84 - j3.56
1900
7.33 + j0.96
1.78 - j3.37
1920
7.27 + j0.93
1.72 - j3.17
1940
7.19 + j0.90
1.64 - j2.98
1960
7.07 + j0.89
1.55 - j2.79
1980
6.93 + j0.97
1.48 - j2.55
2000
6.89 + j1.04
1.46 - j2.36
2020
6.83 + j1.07
1.44 - j2.20
2040
6.75 + j1.12
1.40 - j2.02
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
9
Pout, OUTPUT POWER (dBm)
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
Ideal
P3dB = 53.48 dBm (223 W)
P1dB = 52.67 dBm (185 W)
Actual
VDD = 28 Vdc, IDQ = 1250 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1960 MHz
24 25
26 27 28 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
7.15 - j1.86
0.84 - j2.99
Figure 14. Pulsed CW Output Power
versus Input Power @ 28 V
MD7P19130HR3 MD7P19130HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
11
MD7P19130HR3 MD7P19130HSR3
12
RF Device Data
Freescale Semiconductor
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
13
MD7P19130HR3 MD7P19130HSR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2008
Description
• Initial Release of Data Sheet
MD7P19130HR3 MD7P19130HSR3
RF Device Data
Freescale Semiconductor
15
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MD7P19130HR3 MD7P19130HSR3
Document Number: MD7P19130H
Rev. 0, 5/2008
16
RF Device Data
Freescale Semiconductor