ON NZQA5V6AXV5T1G Transient voltage suppressors esd protection diode with low clamping voltage Datasheet

NZQA5V6AXV5 Series
Transient Voltage Suppressors
ESD Protection Diode with Low Clamping
Voltage
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.
Features
•
•
•
•
•
•
•
•
Low Clamping Voltage
Small SOT−553 SMT Package
Stand Off Voltage: 3 V
Low Leakage Current
Four Separate Unidirectional Configurations for Protection
ESD Protection: IEC61000−4−2: Level 4 ESD Protection
MILSTD 883C − Method 3015−6: Class 3
Complies to USB 1.1 Low Speed & Full Speed Specifications
These are Pb−Free Devices
•
•
•
•
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Protects Four Lines Against Transient Voltage Conditions
Minimize Power Consumption of the System
Minimize PCB Board Space
•
•
•
•
•
Instrumentation Equipment
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
Cellular and Portable Equipment
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1
5
2
3
4
SOT−553
CASE 463B
PLASTIC
Benefits
MARKING DIAGRAM
Typical Applications
xx M G
G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
Steady State Power − 1 Diode (Note 2)
Thermal Resistance,
Junction−to−Ambient
Above 25°C, Derate
PPK
PD
RqJA
20
380
327
3.05
W
mW
°C/W
mW/°C
TJmax
TJ Tstg
150
−55 to
+150
°C
°C
TL
260
°C
Maximum Junction Temperature
Operating Junction and Storage
Temperature Range
Lead Solder Temperature (10 seconds
duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current per Figure 5.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%.
Mounted on FR−4 board with min pad.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 7
1
xx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NZQA5V6AXV5T1
Package
Shipping†
SOT−553* 4000/Tape & Reel
NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T1
SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel
NZQA6V8AXV5T3
SOT−553* 16000/Tape & Reel
NZQA6V8AXV5T3G SOT−553* 16000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
Publication Order Number:
NZQA5V6AXV5/D
NZQA5V6AXV5 Series
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IF
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VC VBR VRWM
Working Peak Reverse Voltage
VBR
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IPP
Uni−Directional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Breakdown
Voltage
VBR @ 1 mA (V)
Leakage
Current
IRM @ VRM
VC Max @ IPP
(Note 4)
Typ
Capacitance
@ 0 V Bias
(pF)
(Note 3)
Typ
Capacitance
@ 3 V Bias
(pF)
(Note 3)
VRWM
IRWM
(mA)
VC
(V)
IPP
(A)
Typ
Max
Typ
Max
5.9
3.0
1.0
13
1.6
13
17
7.0
11.5
7.14
4.3
1.0
13
1.6
12
15
6.7
9.5
Device
Device
Marking
Min
Nom
Max
NZQA5V6AXV5
5P
5.3
5.6
NZQA6V8AXV5
6H
6.47
6.8
VC
Per
IEC61000−4−2
(Note 5)
Figures 1 and 2
(See Below)
3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
NZQA5V6AXV5 Series
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 5. 8 X 20 ms Pulse Waveform
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3
80
NZQA5V6AXV5 Series
TYPICAL ELECTRICAL CHARACTERISTICS − NZQA6V8AXV5
% OF RATED POWER OR IPP
10
1
1
10
100
1000
90
80
70
60
50
40
30
20
10
0
0
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Width
Figure 7. Power Derating Curve
0.16
14
0.14
12
0.04
0.02
2
0.12
150
TA = 25°C
10
0.10
8
0.08
6
0.06
0
25
t, TIME (ms)
TYPICAL CAPACITANCE
(pF)
1 MHz FREQUENCY
IR, REVERSE LEAKAGE (mA)
110
100
4
−60 −40
−20
0
20
40
80
60
0
100
0
1
2
3
4
T, TEMPERATURE (°C)
BIAS VOLTAGE (V)
Figure 8. Reverse Leakage versus
Temperature
Figure 9. Capacitance
1
IF, FORWARD CURRENT (A)
Ppk, PEAK SURGE POWER (W)
100
0.1
0.01
0.001
TA = 25°C
0.6
0.8
1.0
1.2
1.4
VF, FORWARD VOLTAGE (V)
Figure 10. Forward Voltage
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4
1.6
1.8
5
6
NZQA5V6AXV5 Series
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B−01
ISSUE B
D
−X−
5
A
4
1
e
2
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
L
HE
c
5 PL
0.08 (0.003)
DIM
A
b
c
D
E
e
L
HE
M
X Y
MILLIMETERS
NOM
MAX
0.55
0.60
0.22
0.27
0.13
0.18
1.60
1.70
1.20
1.30
0.50 BSC
0.10
0.20
0.30
1.50
1.60
1.70
MIN
0.50
0.17
0.08
1.50
1.10
INCHES
NOM
0.022
0.009
0.005
0.063
0.047
0.020 BSC
0.004
0.008
0.059
0.063
MIN
0.020
0.007
0.003
0.059
0.043
MAX
0.024
0.011
0.007
0.067
0.051
0.012
0.067
STYLE 2:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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NZQA5V6AXV5/D
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