UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT. *Pb-free plating product number: BU406L ORDERING INFORMATION Order Number Normal Lead Free Plating BU406-x-TA3-T BU406L-x-TA3-T BU406-x-TF3-T BU406L-x-TF3-T BU406-x-T3P-T BU406L-x-T3P-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-3P Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube 1 of 4 QW-R203-021,D BU406 NPN PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE=0) VCBO 400 V Collector-Emitter Voltage (VBE=-1.5V) VCEV 400 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage (IC=0) VEBO 6 V Collector Current IC 7 A Collector Peak Current (repetitive) ICM 10 A Collector Peak Current (tp=10ms) ICM 15 A Base Current IB 4 A Collector Dissipation (TC≤25℃) PC 60 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL θJA θJC UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collect Cutoff Current (VBE=0) SYMBOL ICES Emitter Cut-off Current (IC=0) IEBO Collector-Emitter Saturation Voltage VCE(SAT)* Base-Emitter Saturation Voltage VBE(SAT)* DC Current Gain hFE Transition Frequency fT Turn-off Time tOFF Second Breakdown Collector Current Is/b * Pulse duration=300µs, duty cycle 1.5% RATINGS 70 2.08 TEST CONDITIONS VCE=400V VCE=250V TC=150°C VCE=250V VBE=6V IC=5A, IB=0.5A IC=5A, IB=0.5A VCE=10V, IC=500mA IC=500mA, VCE=10V IC=5A, IB=0.5A VCE=40V, t=10ms MIN TYP 70 10 MAX 5 100 1 1 1 1.2 240 0.75 4 UNIT mA µA mA mA V V MHz µs A CLASSIFICATION OF hFE RANK RANGE A 70 ~ 120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 110 ~ 240 2 of 4 QW-R203-021,D BU406 TYPICAL CHARACTERISTICS 10000 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Output Capacitance 1000 f = 1MHz IC = 10IB 1000 Capacitance, Cob (pF) Saturation Voltage, VCE(SAT) (V), VBE(SAT) (V) NPN PLANAR TRANSISTOR VBE(SAT) 100 VCE(SAT) 10 0 1000 100 10 Collector Current, IC (mA) 100 10 1 10000 1 100 10 Collector-Base Voltage, VCB (V) Safe Operating Area Power Derating 80 IC Max. (Continuous) bL S/ im ite d 0.1 1 10 VCE MAX. s 1m ms 10 s 0m ited 10 m Li n io at ip 1 100 Collector-Base Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power Dissipation, PC (W) 10 ss Di Collector Current, IC (A) 70 IC Max. (Pulsed) 60 50 40 TO-220 30 20 10 0 0 25 50 75 100 125 150 175 200 Case Temperature, TC (°C) 3 of 4 QW-R203-021,D BU406 NPN PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-021,D