UTC BU406-X-T3P-T Silicon npn switching transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BU406
NPN PLANAR TRANSISTOR
SILICON NPN SWITCHING
TRANSISTOR
„
DESCRIPTION
The UTC BU406 is a NPN expitaxial planar transistor. It is a fast
switching device for use in horizontal deflection output stages of
large screens MTV receivers with 110℃ CRT.
*Pb-free plating product number: BU406L
„
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BU406-x-TA3-T
BU406L-x-TA3-T
BU406-x-TF3-T
BU406L-x-TF3-T
BU406-x-T3P-T
BU406L-x-T3P-T
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-3P
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
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BU406
„
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
400
V
Collector-Emitter Voltage (VBE=-1.5V)
VCEV
400
V
Collector-Emitter Voltage (IB=0)
VCEO
200
V
Emitter-Base Voltage (IC=0)
VEBO
6
V
Collector Current
IC
7
A
Collector Peak Current (repetitive)
ICM
10
A
Collector Peak Current (tp=10ms)
ICM
15
A
Base Current
IB
4
A
Collector Dissipation (TC≤25℃)
PC
60
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
„
SYMBOL
θJA
θJC
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Collect Cutoff Current (VBE=0)
SYMBOL
ICES
Emitter Cut-off Current (IC=0)
IEBO
Collector-Emitter Saturation Voltage
VCE(SAT)*
Base-Emitter Saturation Voltage
VBE(SAT)*
DC Current Gain
hFE
Transition Frequency
fT
Turn-off Time
tOFF
Second Breakdown Collector Current
Is/b
* Pulse duration=300µs, duty cycle 1.5%
„
RATINGS
70
2.08
TEST CONDITIONS
VCE=400V
VCE=250V TC=150°C
VCE=250V
VBE=6V
IC=5A, IB=0.5A
IC=5A, IB=0.5A
VCE=10V, IC=500mA
IC=500mA, VCE=10V
IC=5A, IB=0.5A
VCE=40V, t=10ms
MIN
TYP
70
10
MAX
5
100
1
1
1
1.2
240
0.75
4
UNIT
mA
µA
mA
mA
V
V
MHz
µs
A
CLASSIFICATION OF hFE
RANK
RANGE
A
70 ~ 120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
110 ~ 240
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BU406
TYPICAL CHARACTERISTICS
10000
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Output Capacitance
1000
f = 1MHz
IC = 10IB
1000
Capacitance, Cob (pF)
Saturation Voltage, VCE(SAT) (V), VBE(SAT) (V)
„
NPN PLANAR TRANSISTOR
VBE(SAT)
100
VCE(SAT)
10
0
1000
100
10
Collector Current, IC (mA)
100
10
1
10000
1
100
10
Collector-Base Voltage, VCB (V)
Safe Operating Area
Power Derating
80
IC Max. (Continuous)
bL
S/
im
ite
d
0.1
1
10
VCE MAX.
s
1m
ms
10
s
0m ited
10
m
Li
n
io
at
ip
1
100
Collector-Base Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power Dissipation, PC (W)
10
ss
Di
Collector Current, IC (A)
70
IC Max. (Pulsed)
60
50
40
TO-220
30
20
10
0
0
25
50
75
100 125 150 175 200
Case Temperature, TC (°C)
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BU406
NPN PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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