NTE464 (P–Ch) & NTE465 (N–Ch) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit –25 – – V VDS = –10V, VGS = 0, TA = +25°C – – –10 nA VDS = –10V, VGS = 0, TA = +150°C – – –10 µA VGS = ±30V, VDS = 0 – – ±10 pA OFF Characteristics Drain–Source Breakdown Voltage Zero–Gate–Voltage Drain Current Gate Reverse Current V(BR)DSX ID = –10µA, VGS = 0 IDSS IGSS ON Characteristics Gate Threshold Voltage VGS(Th) VDS = –10V, ID = –10µA –1 – –5 V Drain–Source On–Voltage VDS(on) ID = –2mA, VGS = –10V – – –1 V ID(on) VGS = –10V, VDS = –10V –3 – – mA On–State Drain Current Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – – 600 Ω – – 300 Ω 1000 – – µmhos Small–Signal Characteristics Drain–Source Resistance NTE464 rds(on) VGS = –10V, ID = 0, f = 1kHz NTE465 Forward Transfer Admittance |yfs| VDS = –10V, ID = 2mA, f = 1kHz Input Capacitance Ciss VDS = –10V, VGS = 0, f = 140kHz – – 5 pF Reverse Transfer Capacitance Crss VDS = 0, VGS = 0, f = 140kHz – – 1.3 pF Drain–Substrate Capacitance NTE464 Cd(sub) VD(SUB) = –10V, f = 140kHz – – 4 pF – – 5 pF – – 45 ns tr – – 65 ns td2 – – 60 ns tf – – 100 ns NTE465 Switching Characteristics Turn–On Delay Rise Time Turn–Off Delay Fall Time td1 ID = –2mA, VDS = –10V, VGS = –10V .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate Source Drain 45° Case .040 (1.02)