MOSFET SMD Type N-Channel MOSFET AO4240 (KO4240) SOP-8 ■ Features ● VDS (V) = 40V ● ID = 24 A (VGS = 10V) ● RDS(ON) ＜ 3.3mΩ (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 4.3mΩ (VGS = 4.5V) 1 2 3 4 D Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ ID 19 IDM 170 Avalanche Current IAS 75 EAS 281 Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA V 24 Pulsed Drain Current Avalanche energy Unit 3.1 2 A mJ W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4240 (KO4240) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 40 1 VDS=40V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=20A 1.2 On State Drain Current ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=10V, VDS=5V 69 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 0.5 1.5 62 87 28 40 10.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω tf IS Diode Forward Voltage VSD Marking 2 4240 KC**** www.kexin.com.cn Ω nC 11.5 ns 42 21 IF= 20A, dI/dt= 500A/us 23 74 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking pF 1170 9 Maximum Body-Diode Continuous Current S 4245 VGS=0V, VDS=20V, f=1MHz 8 trr mΩ A Qgd Qrr V 90 td(on) Body Diode Reverse Recovery Charge 2.3 170 VDS=5V, ID=20A Gate Drain Charge Body Diode Reverse Recovery Time nA 4.3 Turn-On DelayTime Turn-Off Fall Time ±100 4.9 TJ=125℃ Qg Qgs uA 3.3 VGS=4.5V, ID=20A Forward Transconductance Unit V VDS=40V, VGS=0V VGS=10V, ID=20A Static Drain-Source On-Resistance Max nC 4.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO4240 (KO4240) ■ Typical Characterisitics 100 100 VDS=5V 4.5V 80 80 10V 60 ID(A) ID (A) 60 3V 40 125°C 40 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 6 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 5 6 1.8 5 4 VGS=4.5V 3 2 VGS=10V 1 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V10 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 8 50 75 100 175 125°C 1.0E+00 IS (A) 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 150 1.0E+01 125°C 2 125 1.0E+02 ID=20A 4 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 6 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4240 (KO4240) ■ Typical Characterisitics 10 6000 VDS=20V ID=20A 5000 Capacitance (pF) 8 VGS (Volts) 6 4 2 4000 3000 Coss 2000 1000 0 Crss 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 1000 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 1000.0 TA=100°C TA=25°C 100 TA=150°C TA=125°C 10 100.0 ID (Amps) IAR (A) Peak Avalanche Current Ciss RDS(ON) limited 10µs 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 DC 10s 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) . Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 10 1000 MOSFET SMD Type N-Channel MOSFET AO4240 (KO4240) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5