PD -2.462 rev. A 03/99 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features (ISOLATED BASE) Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V VF(typ.) = 1.1V IF(AV) = 60A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 170A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM A D-60 (MODIFIED T0-249AA) Absolute Maximum Ratings (per Leg) Max. Units VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Parameter 600 50 24 200 220 125 V PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 50 A µJ W -55 to +150 °C 300 (0.063 in. (1.6mm) from case) Thermal - Mechanical Characteristics Parameter RθJC RθCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-Sink, Flat, Greased Surface Weight Mounting Torque Min. Typ. Max. 0.10 58 (2.0) 1.0 0.50 35 (4.0) 50 (5.7) Units °C/W K/W g (oz) lbfin (Nm) Note: Limited by junction temperature L = 100µH, duty cycle limited by max TJ 125°C 1 HFA60MB60C PD-2.462 rev. A 03/99 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter V BR V FM Min. Typ. Max. Units Cathode Anode Breakdown Voltage Max Forward Voltage IRM Max Reverse Leakage Current CT LS Junction Capacitance Series Inductance 600 1.3 1.5 1.4 1.7 1.1 1.3 2.0 10 0.50 2.0 68 100 9.2 V Test Conditions I R = 100µA I F = 30A See Fig. 1 I F = 60A I F = 30A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 480V See Fig. 3 VR = 200V Lead to lead 5mm from package body V µA mA pF nH Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Min. Typ. Max. Units Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb 6.60 (0.260) 6.10 (0.240) 50.80 (2.000) REF. 4.95 (0.195) DIA. 4.45 (0.175) (4 PLCS.) 25.65 (1.010) 25.15 (0.990) 12.70 (0.500) REF. 1 9 1.14 (0.045) 0.76 (0.030) 13.21 (0.520) 12.70 (0.500) 3.93 (0.155) 3.68 (0.145) (8 PLCS.) A Outline D-60 (Modfied JEDEC TO - 249AA) Dimensions in millimeters and inches 38.35 (1.510) 6.60 (0.260) 6.10 (0.240) 2 LEAD ASSIGNMENTS 1-3 ANODE 4-6 CATHODE 7-9 ANODE BASE (ISOLATED) 1.14 (0.045) 0.89 (0.035) * (9 PLCS.) * PRE-SOLDER DIP DIMENSIONS 1.14 (0.045) * 0.89 (0.035) Test Conditions 30 IF = 1.0A, di f /dt = 200A/µs, VR = 30V 67 100 ns TJ = 25°C See 112 170 TJ = 125°C Fig. 5 IF = 50A 6.0 11 TJ = 25°C See A 9.0 16 TJ = 125°C Fig. 6 VR = 200V 200 550 TJ = 25°C See nC 500 1400 TJ = 125°C Fig. 7 dif /dt = 200A/µs 250 TJ = 25°C See A/µs 170 TJ = 125°C Fig. 8 37.85 (1.490) 1.27 (0.050) REF. 61.21 (2.410) 60.71 (2.390) 10.16 (0.400) 8.38 (0.330) 3.30 (0.130) 3.05 (0.120) HFA60MB60C PD-2.462 rev. A 03/99 10000 Reverse Current - I R (µA) 100 TJ = 150°C 1000 100 TJ = 125°C 10 1 0.1 TJ = 25°C 0.01 T = 150°C 0 J 200 400 600 Reverse Voltage - VR (V) TJ = 125°C Fig. 2 - Typical Reverse Current vs. Reverse Voltage, (per Leg) TJ = 25°C 10 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 1000 1000 A TJ = 25°C 100 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, (per Leg) 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, (per Leg) Thermal Impedance - Z thJC (K/W) 10 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 PDM t Notes: 1. Duty factor D = t / t 1 2 0.01 0.001 0.00001 1 t2 Single Pulse (Thermal Resistance) 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 100 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics, (per Leg) 3 HFA60MB60C PD-2.462 rev. A 03/99 150 40 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 30 I F = 70A I F = 30A 90 t rr - (ns) t rr - (ns) 120 I F = 15A I F = 70A 20 I F = 30A I F = 15A 60 10 30 100 di f /dt - (A/µs) 0 100 1000 Fig. 5 - Typical Reverse Recovery vs. di f/dt, (per Leg) di f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) 10000 1600 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) 1200 Q RR - (nC) IF = 70A I F = 30A 800 I F = 15A 1000 I F = 15A I F = 30A I F = 70A 100 400 0 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. di f/dt, (per Leg) 4 10 100 di f /dt - (A/µs) Fig. 8 - Typical di (rec)M/dt vs. dif/dt, (per Leg) 1000 HFA60MB60C PD-2.462 rev. A 03/99 3 t rr IF tb ta 0 REVERSE RECOVERY CIRCUIT VR = 200V Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.01 Ω 0.75 I RRM L = 70µH 1 D.U.T. D dif/dt ADJUST G di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 1. dif /dt - Rate of change of current through zero crossing IRFP250 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) HIGH-SPEED SWITCH DUT Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + DECAY TIME Vd = 50V V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 5