Sony DM-111A Magneto-resistance element Datasheet

DM-111A
Magneto-Resistance Element
For the availability of this product, please contact the sales office.
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
M-102
(Plastic)
Features
• Low power consumption
38µW (Typ.) at VCC=5V
• Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V
and H=4000A/m
• High reliability
Ensured through silicon nitride protective filming
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage
VCC
10
• Operating temperature
Topr
–40 to +80
• Storage temperature
Tstg
–50 to +100
Recommended Operating Condition
5
V
°C
°C
V
Electrical Characteristics
Item
Total resistance
(Ta=25°C)
Symbol
RT
Midpoint potential
VC
Output voltage
VO
Condition
H=4000A/m, θ=45°
VCC=5V , H=4000A/m
Revoiving magnetic field
VCC=5V , H=4000A/m
Revoiving magnetic field
Min.
500
Typ.
650
Max.
800
Unit
kΩ
2.47
2.50
2.53
V
30
75
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E94706A5X-TE
DM-111A
Equivalent Circuit
H
θ
RA
RB
2
1
RB min
RA max
3
1
RA : Resistance reduces as the
magnetic field revolves.
RB : Resistance increases as the
magnetic field revolves.
2
3
Introduction
1) Power supplying pin output pin
111A
12 3
1
RA
RB
2
VCC
3
2) Sensitive direction vs. Midpoint potential
c
d
b
a
Midpoint potential
a
e
e
Direction of Magneticflux
Incidence
Sensitive
Non-sensitive
VCC
2
d
b
Hs
Direction of Magneticflux
Incidence
H
c
Useful Region
Changes occur to the output voltage at the saturation region
of V-H curve according to the direction of magnetic flux.
These changes provide for the operation.
• With one rotation of magnetic flux, signals for 2 periods are
obtained.
—2—
DM-111A
3) 0° Biasing magnetic field
(Switching use)
AA
Sensitive
Biasing
Magnet
V
H
Non-sensitive
Biasing Magnetic Field
Detected Magnetic Field
+
1
V
2
Output
3
GND
4) 45° Biasing magnetic field
(Analog use)
AA
Sensitive
Biasing
Magnet
V
H
Non-sensitive
Biasing Magnetic Field
Detected Magnetic Field
—3—
DM-111A
Applications
1. Detection of revolution
N
S
S
N
N
S
AAAA
AAAA
2. Position detecting
AAA
AAA
S
N
A
N
S
3. Angular detection of rotating wheel
AAAA
AAA
AAAA
AAAA
AA
AA
AAA
AAAA
S
N
N
S N
N
S
S N
4. Readind out of analog value
N
AAAA
AA
AA
AAAA
Electric
current
Electric
current
5. Position detecting of revolving element
AAAA
AAAA
N
AA
AA
Magnetic conductors
—4—
DM-111A
Circuits
2), 3), 5)
Vcc
S
AA
AA
N
Output
r1
1
2
X
3
Moving
Direction
(X-derection)
r2
Differential
Amplifier
1), 2), 3), 5)
AAAA
AA
A
AA
A
Moving
Direction
(X-derection)
Vcc
Output
r1
1
2
3
r2
X
Differenntial
Amplifier
Biasing Magnet
Bridge Circuits
AA
AAA
A
AAAA
(Biasing Magnet)
SONY
111A
Output
SONY
111A
By coupling 2 pieces back to back and sticking item
together in a bridge, the output voltage is doubled.
How to make a Biasing Magnetic Field
• Stick a rubber of ferrite biasing magemt
• Position an element between the poles of the permanent magnet.
Notes on Application
• Excute the solder of the lead line within 10 seconds at a temperature below 260°C
• To fix the ELEMENTS: When glue is used, DO NOT apply mechanical stress to the elements.
• Do not use this element in the dewy condition.
—5—
DM-111A
Example Representative Characteristics
Midpoint potential vs. Magnetic field Intensity
Midpoint potential vs. Magnetic-flux Incidence
2.55
2.55
VCC=5V
Ta=25˚C
2.51
2.53
VC Midpoint potential (V)
111A
2.52
2.49
2.48
2.47
VCC GND
2.50
111A
VC Midpoint potential (V)
2.53
2.52
H=4000A/m
Ta=25˚C
2.51
2.50
2.49
111A
2.48
2.47
2.46
2.45
0
1.VCC=5V
2. Output
3. GND
2.54
VCC GND
2.54
θ
123
2.46
10000
2.45
20000
0
H-Revoluing magnetic field intensity (Oe)
Output voltage vs. Magnetic fiels Intensity
225
45
90
135
180
θ-Direction of magnetic-flux Incidence (deg)
Total resistance, output voltage vs. Temperature
100
100
900
90
60
40
20
80
800
RT
70
60
VO
700
50
40
600
H=4000A/m
(Revolving magnetic fiels)
30
500
20
10
0
0
10000
400
0
20000
–50 –25
H-Revolving magnetic field intensity (Oe)
0
25 50
75 100 125 150
Ta-Ambient temperature (˚C)
—6—
RT Total resistance (kΩ)
VO Output voltage (mVp-p)
80
Vo Output voltage (mVp-p)
VCC=5V
Ta=25˚C
DM-111A
Unit : mm
M-102
7.0 ± 0.4
2.0 ± 0.3
0.4
6.3 ± 0.4
1.0
6.0 ± 1.0
1.7
Package Outline
0.5 ± 0.2
1.2
0.25 ± 0.1
2.54
5.08
SONY CODE
M-102
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
—7—
0.24g
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