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FCMT099N65S3 N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ Features Description o SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solar inverter applications. • 700 V @ TJ = 150 C • Typ. RDS(on) = 87 mΩ • Ultra Low Gate Charge (Typ. Qg = 56 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = TBD pF) • 100% Avalanche Tested • RoHS Compliant Applications The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2). SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1). • Server and Telecom Power Supplies • Solar Inverters • Adaptors D S2 G S2 S1 S1 : Driver Source S2 : Power Source G Power88 S1 S2 Absolute Maximum Ratings TC = 25 o C unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current (Note 1) 75 A EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ IAS Avalanche Current (Note 1) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ dv/dt Parameter FCMT099N65S3 650 - DC ±30 - AC (f > 1 Hz) - Continuous (TC = 25oC) 30 19 - Pulsed MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) V ±30 - Continuous (TC = 100oC) 20 A V/ns (TC = 25oC) 227 W - Derate Above 25oC 1.82 W/oC -55 to +150 oC 300 oC FCMT099N65S3 Unit PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. 0.55 45 Semiconductor Components Industries, LLC, 2017 May, 2017, Rev. 1.0 o C/W Publication Order Number: FCMT099N65S3/D 1 FCMT099N65S3 — N-Channel SuperFET® III MOSFET www.onsemi.com Part Number FCMT099N65S3 Top Mark FCMT099N65S3 Package Power88 Reel Size 13” Tape Width 13.3 mm Quantity 3000 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 1 mA, TJ = 25°C 650 - - V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 - - V - 0.68 - V/oC µA ID = 1 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, TC = 125oC - 2.77 - VGS = ±30 V, VDS = 0 V - - ±100 nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 3 mA 2.5 - 4.5 V Static Drain to Source On Resistance - 87 99 mΩ gFS Forward Transconductance VGS = 10 V, ID = 15 A VDS = 20 V, ID = 15 A - 17 - S pF Dynamic Characteristics Ciss Input Capacitance 2270 - Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz - Coss - 50 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 500 - pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 74 - pF Qg(tot) Total Gate Charge at 10V 56 - nC Qgs Gate to Source Gate Charge VDS = 400 V, ID = 15 A, VGS = 10 V - 13 - nC Qgd Gate to Drain “Miller” Charge - 23 - nC ESR Equivalent Series Resistance f = 1 MHz - 0.5 - Ω - 22 - ns VDD = 400 V, ID = 15 A, VGS = 10 V, Rg = 4.7 Ω - 20 - ns - 58 - ns - 5 - ns (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Source-Drain Diode Characteristics IS Maximum Continuous Source to Drain Diode Forward Current - - 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current - - 75 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 15 A - - 1.2 V trr Reverse Recovery Time 352 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 15 A, dIF/dt = 100 A/µs - 6.5 - µC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4.4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/µs, VDD ≤ 400 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 FCMT099N65S3 — N-Channel SuperFET® III MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 80 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 10 *Notes: 1. VDS = 20V 2. 250µs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 80 o 150 C 10 1 o 25 C o -55 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.4 2 *Notes: 1. VGS = 0V IS, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [Ω] 0.3 0.2 VGS = 10V 0.1 VGS = 20V 20 40 60 ID, Drain Current [A] o 150 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0 10 VGS, Gate-Source Voltage [V] Capacitances [pF] 10000 Ciss 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 Crss 1 10 100 VDS, Drain-Source Voltage [V] 0.5 1.0 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 100000 1 2. 250µs Pulse Test 10 80 Figure 5. Capacitance Characteristics 10 9 100 o 0 4 5 6 7 8 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature *Note: TC = 25 C 0.0 3 8 www.onsemi.com 3 VDS = 130V VDS = 400V 6 4 2 0 1000 *Note: ID = 15A 0 15 30 45 Qg, Total Gate Charge [nC] 60 FCMT099N65S3 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics FCMT099N65S3 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 2.5 *Notes: 1. VGS = 10V 2. ID = 15A 2.0 1.5 1.0 0.5 0.0 0.8 -50 -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 30 100 10µs 10 1ms ID, Drain Current [A] ID, Drain Current [A] 100µs 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 20 10 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 Figure 11. Eoss vs. Drain to Source Voltage 15 EOSS [µJ] 10 5 0 0 130 260 390 520 VDS, Drain to Source Voltage [V] 650 www.onsemi.com 4 50 75 100 125 o TC, Case Temperature [ C] 150 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 12. Transient Thermal Response Curve 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 0.001 -5 10 ZθJC(t) = r(t) x RθJC RθJC = 0.55 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION (sec) www.onsemi.com 5 -1 10 0 10 FCMT099N65S3 — N-Channel SuperFET® III MOSFET Typical Performance Characteristics (Continued) Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FCMT099N65S3 — N-Channel SuperFET® III MOSFET Figure 13. Gate Charge Test Circuit & Waveform FCMT099N65S3 — N-Channel SuperFET® III MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 FCMT099N65S3 — N-Channel SuperFET® III MOSFET Mechanical Dimensions ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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