Transistors ! ! ! ! ! ! ! ! ! DTA114TUB ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! -100mA / -50V Digital transistors (with built-in resistors) DTA114TUB zApplications Inverter, Interface, Driver zDimensions (Unit : mm) zStructure PNP silicon epitaxial planar transistor type (Resistor built-in) 0.9 0.53 2.0 (3) (1) (2) 0.13 0.65 0.65 1.3 0.53 0.32 Each lead has same dimensions (1) Base (2) Emitter (3) Collector Abbreviated symbol : 94 zEquivalent circuit C zPackaging specifications B Package UMT3F Packaging type Taping R1 E TL Code Part No. 0.425 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. 2.1 1.25 0.425 UMT3F B : Base C : Collector E : Emitter 3000 Basic ordering unit (pieces) DTA114TUB R1=10kΩ zAbsolute maximum ratings (Ta=25qC) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Power dissipation ∗ PD 200 mW Junction temperature Tj 150 °C Tstg −55 to +150 °C Parameter Range of storage temperature ∗ Each terminal mounted on a recommended land 1/2 ! Transistors ! ! ! ! ! ! ! ! DTA114TUB ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! zElectrical characteristics (Ta=25qC) Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Collector-base breakdown voltage BVCBO −50 − − V IC=−50μA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50μA ICBO − − −500 nA VCB=−50V Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Conditions IEBO − − −500 nA VEB=−4V VCE(sat) − − −0.3 V IC=−10mA, IB=−1mA hFE 100 250 600 − Transition frequency fT ∗ − 250 − MHz Input resistance R1 7 10 13 kΩ DC current gain VCE=−5V, IC=−1mA VCE=−10V, IE=5mA, f=100MHz − ∗ Characteristics of built-in transistor 1k VCE=−5V DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current ! ! ! COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves −1 lC/lB=20 −500m −200m −100m Ta=100°C 25°C −40°C −50m −20m −10m −5m −2m −1m −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0